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Semiconductor parts containing 610
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Advanced Analogic Technologies
ACRAN
| Part | Description |
| 46100 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
| 46100-2 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
| 46100-3 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
| 46101 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
| 46104 | 4 W, 28 V, 1000 MHz, UHF emitter transistor |
| 46104-2 | 4 W, 28 V, 1000 MHz, UHF emitter transistor |
Analog Devices
| Part | Description |
| 5962-8686101XA | High Precision 2.5 V IC Reference |
| 5962-8686102XA | High Precision 2.5 V IC Reference |
| 5962-8686103XA | High Precision 2.5 V IC Reference |
| 5962-9961001HXA | Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning |
| 5962-9961002HXA | Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning |
| AD7610 | 16-Bit, 250 kSPS PulSAR® Bipolar Programmable Inputs A/D Converter |
| AD8610 | Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers |
| AD8610AR | 27.3V; precision low noise low input bias current wide bandwidth JFET operational amplifier. For photodiode amplifier, ATE, instrumentation, sensors and control |
| AD8610AR-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610AR-REEL7 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610ARM | 27.3V; precision low noise low input bias current wide bandwidth JFET operational amplifier. For photodiode amplifier, ATE, instrumentation, sensors and control |
| AD8610ARM-R2 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610ARM-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610ARMZ-R2 | Precision, Low Input Bias Current, Wide BW JFET Op Amp (Single) |
| AD8610ARMZ-REEL | Precision, Low Input Bias Current, Wide BW JFET Op Amp (Single) |
| AD8610ARZ | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610ARZ-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610ARZ-REEL7 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610BR | 27.3V; precision low noise low input bias current wide bandwidth JFET operational amplifier. For photodiode amplifier, ATE, instrumentation, sensors and control |
| AD8610BR-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610BR-REEL7 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610BRZ | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610BRZ-REEL | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD8610BRZ-REEL7 | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier |
| AD9610 | Wide Bandwidth, Fast Settling Operational Amplifier |
| AD9610BH | 18V; 10mA; wide bandwidth, fast settling operational amplifier. For driving flash converters,nhigh speed DAC I/V converters |
| AD9610TH | 18V; 10mA; wide bandwidth, fast settling operational amplifier. For driving flash converters,nhigh speed DAC I/V converters |
| AD9610TH/883B | 18V; 10mA; wide bandwidth, fast settling operational amplifier. For driving flash converters,nhigh speed DAC I/V converters |
| ADIS16100 | ±300°/sec Yaw Rate Gyro with SPI Interface |
| ADIS16100ACC | ±300°/sec Yaw Rate Gyro with SPI Interface |
| ADP1610 | 1.2 MHz DC-DC Step-Up Switching Converter |
| ADP1610-EVAL | 1.2 MHz DC-DC Step-Up Switching Converter |
| ADP1610ARMZ-R7 | 1.2 MHz DC-DC Step-Up Switching Converter |
| ADP3610 | 320 mA Switched Capacitor Voltage Doubler |
| ADP3610ARU | 320 mA Switched Capacitor Voltage Doubler |
Advanced Semiconductor, Inc
| Part | Description |
| ASI10610 | NPN SILICON RF POWER TRANSISTOR |
| MRA0610-18A | NPN SILICON RF POWER TRANSISTOR |
Analog Integrations Corporation
| Part | Description |
| AIC1610 | HIGH EFFICIENCY SYNCHRONOUS STEP-UP DC/DC CONVERTER |
| AIC1610COTR | HIGH EFFICIENCY SYNCHRONOUS STEP-UP DC/DC CONVERTER |
| AIC1610POTR | HIGH EFFICIENCY SYNCHRONOUS STEP-UP DC/DC CONVERTER |
ALIED
| Part | Description |
| GP610 | 6.0A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier |
| RP610 | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
ALPHA
| Part | Description |
| DVB6100-06 | 15V Vrrm, 375fF Capacitance Varactor Diode |
| DVB6100-12 | 15V Vrrm, 750fF Capacitance Varactor Diode |
| DVB6100-18 | 15V Vrrm, 1.2pF Capacitance Varactor Diode |
| DVB6101-06 | 30V Vrrm, 375fF Capacitance Varactor Diode |
| DVB6101-12 | 30V Vrrm, 625fF Capacitance Varactor Diode |
| DVB6101-18 | 30V Vrrm, 875fF Capacitance Varactor Diode |
| DVB6101-24 | 30V Vrrm, 1.1pF Capacitance Varactor Diode |
| DVB6101-30 | 30V Vrrm, 1.3pF Capacitance Varactor Diode |
| DVB6102-06 | 45V Vrrm, 750fF Capacitance Varactor Diode |
| DVB6102-12 | 45V Vrrm, 1.2pF Capacitance Varactor Diode |
| DVB6102-18 | 45V Vrrm, 1.7pF Capacitance Varactor Diode |
| DVB6102-24 | 45V Vrrm, 2.5pF Capacitance Varactor Diode |
| DVB6103-06 | 60V Vrrm, 750fF Capacitance Varactor Diode |
| DVB6103-12 | 60V Vrrm, 1.2pF Capacitance Varactor Diode |
| DVB6103-18 | 60V Vrrm, 1.7pF Capacitance Varactor Diode |
| DVB6103-24 | 60V Vrrm, 2.5pF Capacitance Varactor Diode |
| DVB6104-06 | 75V Vrrm, 2.5pF Capacitance Varactor Diode |
| DVB6104-12 | 75V Vrrm, 4.5pF Capacitance Varactor Diode |
| DVB6104-18 | 75V Vrrm, 6.5pF Capacitance Varactor Diode |
| DVB6104-24 | 75V Vrrm, 8.7pF Capacitance Varactor Diode |
Alliance Semiconductor Corp.
AMIS
| Part | Description |
| FS6108-01 | 1:9 zero delay buffer IC |
Allegro MicroSystems, Inc.
| Part | Description |
| ATS610LSA | Dynamic, peak-detecting,differential hall-effect gear-tooth sensors |
| ATS610LSC | Dynamic, peak-detecting,differential hall-effect gear-tooth sensors |
| THD4610 | 600mA Iout, 80V Vrrm Fast Recovery Rectifier |
Anadigics, Inc.
| Part | Description |
| AWT6102M2 | EGSM/DCS/PCS triple band power amplifier module |
| AWT6103M5 | Cellular dual mode AMPS/TDMA mode 3.5V/30 dBm linear power amplifier module |
| AWT6104M5 | PCS TDMA 3.5V/30 dBm linear power amplifier module |
| AWT6107 | 3.5V GPRS amplifier module |
| AWT6108 | Quad Band Power Amplifier Module |
| AWT6108M10P8 | Quad Band Power Amplifier Module |
Atmel Corporation
Burr-Brown Corp.
| Part | Description |
| VCA610 | WIDEBAND VOLTAGE CONTROLLED AMPLIFIER |
| VCA610P | Wideband Voltage Controlled Amplifier |
| VCA610PA | Wideband Voltage Controlled Amplifier |
| VCA610U | Wideband Voltage Controlled Amplifier |
| VCA610UA | Wideband Voltage Controlled Amplifier |
| VCA610UA/2K5 | Wideband Voltage Controlled Amplifier |
BIPOL
| Part | Description |
| BMT0610B04 | Silicon microwave power transistor. |
| BRF610 | NPN low noise silicon microwave transistor. |
| BRF61002 | NPN low noise silicon microwave transistor. |
| BRF61002J | NPN low noise silicon microwave transistor. |
| BRF61004 | NPN low noise silicon microwave transistor. |
| BRF61014 | NPN low noise silicon microwave transistor. |
| BRF61014 | NPN low noise silicon microwave transistor. |
| BRF61035 | NPN low noise silicon microwave transistor. |
| BRF61085 | NPN low noise silicon microwave transistor. |
| BRF61085 | NPN low noise silicon microwave transistor. |
| BRF61087 | NPN low noise silicon microwave transistor. |
BOCA
| Part | Description |
| 2N6106 | 80 V, epitaxial-base PNP selicon versawatt transistor |
| 2N6107 | 80 V, epitaxial-base PNP selicon versawatt transistor |
| 2N6108 | 60 V, epitaxial-base PNP selicon versawatt transistor |
| 2N6109 | 60 V, epitaxial-base PNP selicon versawatt transistor |
BSI
| Part | Description |
| BS616UV1610 | Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616UV1610BC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit |
| BS616UV1610BI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit |
| BS616UV1610FC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit |
| BS616UV1610FI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit |
BYTES
| Part | Description |
| BR610 | Single phase bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. |
CALLM
| Part | Description |
| FA7610CN | Bipolar IC for switching power supply control |
| FA7610CP | Bipolar IC for switching power supply control |
| KBPC610 | 6AMP silicon bridge rectifier |
| KBU610 | 6AMP silicon bridge rectifier |
| RKBPC610 | 6AMP fast recovery bridge rectifier |
Calogic, LLC
| Part | Description |
| VN0610 | N-Channel Enhancement-Mode MOS Transistors |
| VN0610LL | N-Channel enhancement-mode MOS transistor |
California Micro Devices
CANDD
| Part | Description |
| 26100 | Bobbin wound surface mount inductor (unshielded type). Nominal inductance (1Hz, 100mV) 10uH. |
| 26101 | Bobbin wound surface mount inductor (unshielded type). Nominal inductance (1Hz, 100mV) 100uH. |
| 76610/1 | Pulse transformer. Turns ratio (+-2%) 4:1. |
| 76610/4 | Pulse transformer. Turns ratio (+-2%) 4:1. |
| 76610/6 | Pulse transformer. Turns ratio (+-2%) 4:1. |
| 766101 | Pulse Transformers |
| 766104 | Pulse Transformers |
| 766106 | Pulse Transformers |
CDI
| Part | Description |
| CD610 | 6.2V General purpose voltage reference/regulator diode |
Continental Device India Ltd
| Part | Description |
| 2N6101 | 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
| 2N6107 | 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
| 2N6109 | 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
| CJF6107 | 34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE. |
CENTR
Cirrus Logic
| Part | Description |
| CS4610 | CrystalClear SoundFusion PCI Audio Accelerator |
| CS4610-CM | CrystalClear soundfusion PCI audio accelerator |
| CS4610C-CQ | CrystalClear soundfusion PCI audio accelerator |
CLREX
| Part | Description |
| CLI610 | 100 mA, optical switch |
CNEL
| Part | Description |
| GBPC610 | Single phase silicon passivated bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. |
| KBPC610 | Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. |
COMCH
| Part | Description |
| KBU610 | 6.0 A silicon bridge rectifier. Peak repetitive reverse voltage 1000 V. |
Cypress Semiconductor
Dallas Semiconductor
| Part | Description |
| DS1610 | V(cc): -0.5 to +7.0V; partitioned NV controller |
| DS1610 | V(cc): -0.5 to +7.0V; partitioned NV controller |
| DS21610 | 3.3V/5V Clock Rate Adapter |
| DS21610-DS21610SN | 3.3V/5V Clock Rate Adapter |
| DS21610QN | 3.3V/5V Clock Rate Adapter |
| DS21610SN | 3.3V/5V Clock Rate Adapter |
DATV
| Part | Description |
| DV16100 | CHARACTER LCD MODULE display format: 16x1; module size: 80.0x36.0x10.0; viewing size: 64.5x13.8; dot size: 0.56x0.75; character size: 3.07x6.56; |
DCCOM
| Part | Description |
| BR610 | 6.0A single-phase silicon bridge rectifier |
| KBPC610 | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
Diotec Elektronische
| Part | Description |
| KBPC610 | Silicon bridge rectifier |
DIODS
| Part | Description |
| GBJ610 | 1000V; 6.0A glass passivated bridge rectifier |
| GBU610 | 1000V; 6.0A glass passivated bridge rectifier |
| KBJ610G | 1000V; 6.0A glass passivated bridge rectifier |
| MURB1610CT | 100V; 16A surface mount super-fast rectifier |
| STPRF1610CT | 100V; 16A super-fast glass passivated rectifier |
DIOUS
| Part | Description |
| GP610 | 6.0A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier |
| RP610 | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
DYNEX
| Part | Description |
| TF66610A | 1000V fast switching thyristor |
| TK3610K | 1000V phase control thyristor |
| TK3610M | 1000V phase control thyristor |
EASTR
| Part | Description |
| VC610 | 40V Vrrm, 10pF Capacitance Varactor Diode |
| VC610A | 40V Vrrm, 10pF Capacitance Varactor Diode |
| VC610B | 40V Vrrm, 10pF Capacitance Varactor Diode |
ECG
| Part | Description |
| ECG610 | 30V Vrrm, 6.8pF Capacitance Varactor Diode |
| ECG6102 | 550A Iout, 600V Vrrm General Purpose Silicon Rectifier |
| ECG6103 | 550A Iout, 600V Vrrm General Purpose Silicon Rectifier |
| ECG6104 | 550A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier |
| ECG6105 | 550A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier |
| ECG6106 | 450A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier |
| ECG6107 | 450A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier |
EDAL
| Part | Description |
| 1N2610E | 750mA Iout, 100V Vrrm General Purpose Silicon Rectifier |
EIC
| Part | Description |
| ABR610 | 1000 V, 6 A Avalanche bridge rectifier |
| BR610 | 1000 V, 6 A silicon bridge rectifier |
| FBR610 | 1000 V, 6 A, fast recovery bridge rectifier |
| MBR16100CT | Schottky Barrier Rectifiers |
| RBV610 | 1000 V, 6 A, silicon bridge rectifier |
| RBV610D | 1000 V, 6 A, silicon bridge rectifier |
ELAN Microelectronics Corp.
| Part | Description |
| EM56101A | Tiny controller-based dual channel speech synthesizer |
Ericsson Microelectronics
Exar
| Part | Description |
| MP7610 | Octal 14-Bit DAC Array? D/A Converter with Output Amplifier and Serial Data/Address ?P Control Logic |
| MP7610AP | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
| MP7610AS | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
| MP7610BP | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
| MP7610BS | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
| MP7610CP | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
| MP7610CS | D/A Converter with Output Amplifier and Serial Data/Address mP Control Logic |
FAGOR
Fairchild Semiconductor
| Part | Description |
| BD13610S | PNP Epitaxial Silicon Transistor |
| BD13610STU | PNP Epitaxial Silicon Transistor |
| BD17610STU | PNP Epitaxial Silicon Transistor |
| BD37610STU | PNP Epitaxial Silicon Transistor |
| FAN5610 | LED Driver for White, Blue or any Color LED |
| FAN5610MPX | LED Driver for White, Blue or any Color LED |
| FRP1610 | Ultra-fast POWERplanar rectifier, 16 A, 100 V. |
| FRP1610CC | Ultra-fast POWERplanar rectifier, 16 A, 100 V. |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8 | 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76107D3S | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76107P3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| IRF610 | N-channel power MOSFET, 3.5 A, 200V. |
| IRF610-613 | N-Channel Power MOSFETs, 3.5A, 150-200V |
| IRF610B | 200V N-Channel MOSFET |
| IRF610B_FP001 | 200V N-Channel B-FET / Substitute of IRF610 & IRF610A |
| IRFI610B | 200V N-Channel MOSFET |
| IRFI610BTU_FP001 | 200V N-Channel B-FET / Substitute of IRFI610A |
| IRFS610A | Advenced Power MOSFET (N-CHANNEL) |
| IRFS610B | 200V N-Channel MOSFET |
| IRFS610B_FP001 | 200V N-Channel B-FET / Substitute of IRFS610 & IRFS610A |
| IRFW610B | 200V N-Channel MOSFET |
| IRFW610BTM_FP001 | 200V N-Channel B-FET / Substitute of IRFW610A |
| IRL610 | Advanced Power MOSFET |
| IRL610A | Power MOSFET |
| IRLI610A | Power MOSFET |
| IRLI610ATU | 200V N-Channel Logic Level A-FET |
| IRLW610A | Power MOSFET |
| IRLW610ATM | 200V N-Channel Logic Level A-FET |
| IRLWI610A | Advanced Power MOSFET |
| MAN3610A | 0.300-INCH SEVEN SEGMENT DISPLAYS |
| MAN4610A | High efficiency seven segment display, orange |
| MAN6610 | 0.560-INCH SEVEN SEGMENT DISPLAYS |
| MAN8610 | 0.800-INCH SEVEN SEGMENT DISPLAYS |
| NDB610A | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor |
| NDP610A | N-Channel Enhancement Mode Field Effect Transistor [Life-time buy] |
| NDP610AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP610B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP610BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDS0610 | P-Channel Enhancement Mode Field Effect Transistor |
| NDS0610_NL | P-Channel Enhancement Mode Field Effect Transistor |
| QTLP610C | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-2 | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-3 | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-4 | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-5 | SURFACE MOUNT LED LAMP Right Angle - (Side Looker) |
| QTLP610C-7 | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-8 | SURFACE MOUNT LED LAMP Right Angle - (Side Looker) |
| QTLP610C-AG | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-B | SURFACE MOUNT LED LAMP STANDARD BRIGHT RIGHT ANGLE |
| QTLP610C-E | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-EB | SURFACE MOUNT LED LAMP RIGHT ANGLE |
| QTLP610C-IB | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-IG | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-O | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-R | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| QTLP610C-Y | SURFACE MOUNT LED LAMP SUPER BRIGHT RIGHT ANGLE |
| SFI9610 | P-CHANNEL POWER MOSFET |
| SFI9610TU | 200V P-Channel A-FET |
| SFP9610 | P-CHANNEL POWER MOSFET |
| SFS9610 | Advanced Power MOSFET |
| SFW9610 | Advanced Power MOSFET |
| SFW9610TM | 200V P-Channel A-FET |
| SFWI9610 | Advanced Power MOSFET |
| SPT7610 | 6-BIT, 1 GSPS FLASH A/CONVERTER |
| SPT7610SIQ | 6-BIT, 1 GSPS FLASH A/D CONVERTER |
FORMO
| Part | Description |
| BR610 | 1000 V, 6 A single phase bridge rectifier |
Fuji Electric Co.
| Part | Description |
| FA7610CN | FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control |
| FA7610CP | FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control |
| FA7610CPN | FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control |
| KBPC610 | 6 AMP SILICON BRIDGE RECTIFIER |
| KBU610 | 6 AMP SILICON BRIDGE RECTIFIER |
| RKBPC610 | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
GCC
| Part | Description |
| G2A061000 | General purpose reed retay. Nominal voltage 6 (VDC). |
GDIOD
| Part | Description |
| 1N2610 | 750mA Iout, 100V Vrrm General Purpose Silicon Rectifier |
| 1N610 | 800mA Iout, 200V Vrrm General Purpose Silicon Rectifier |
| 1N610A | 800mA Iout, 200V Vrrm General Purpose Silicon Rectifier |
| PR6105 | 6.2V, 250mWt General purpose voltage reference/regulator diode |
| SL610 | 150mA Iout, 1.0kV Vrrm General Purpose Silicon Rectifier |
| TFR610 | 6.0A Iout, 100V Vrrm Fast Recovery Rectifier |
General Semiconductor
| Part | Description |
| GBPC610 | Glass Passivated Single-phase Bridge Rectifier |
GESS
| Part | Description |
| 2N6106 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
| 2N6106 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
| 2N6107 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
| 2N6107 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
| 2N6108 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
| 2N6108 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
| 2N6109 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
| 2N6109 | Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
| IRF610 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
| RUR-D1610 | Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
GLINK
GODAR
| Part | Description |
| BR610 | 1000 V, 6 A, Single-phase silicon bridge |
| KBPC610 | 1000 V, 6 A, Single-phase silicon bridge |
GPSEM
| Part | Description |
| GSD61015 | 1200 V rectifier diode |
GTL
| Part | Description |
| 8610 | T-1 3/4 subminiature, wire lead lamp. 6.3 volts, 0.200 amps. |
HAMAM
| Part | Description |
| L6108 | 70mA; 5V; 0.6A; high input red LED. For optical switches, etc |
Harris Semiconductor
| Part | Description |
| RURD610 | 6A Iout, 100V Vrrm Fast Recovery Rectifier |
| RURD610S | 6A Iout, 100V Vrrm Fast Recovery Rectifier |
HERMN
| Part | Description |
| HT610/02OG6 | 200V V[drm] Max., 600A I[T] Max. Silicon Controlled Rectifier |
| HT610/03OG6 | 300V V[drm] Max., 600A I[T] Max. Silicon Controlled Rectifier |
| HT610/04OG6 | 400V V[drm] Max., 600A I[T] Max. Silicon Controlled Rectifier |
| HT610/05OG6 | 500V V[drm] Max., 600A I[T] Max. Silicon Controlled Rectifier |
| HT610/06OG6 | 600V V[drm] Max., 600A I[T] Max. Silicon Controlled Rectifier |
Hitachi Semiconductor
| Part | Description |
| 2SC2610 | Small signal general purpose transistor |
| 2SD1610 | Bipolar power general purpose transistor |
| HA16103 | Watchdog Timer |
| HA16103FPJ | Watch dog timer |
| HA16103FPK | Watch dog timer |
| HA16103PJ | 40 V, voltage regulator control IC for microcomputer system |
| HA16103PJ | Watch dog timer |
| HA16103PJ | 5 V, voltage regulator control IC for microcomputer system |
| HA16107FP | Switching regulator |
| HA16107FP | 600 kHz PWM switching regulator controller |
| HA16107P | Switching regulator |
| HA16107P | 600 kHz PWM switching regulator controller |
| HA16108FP | Switching regulator |
| HA16108FP | 600 kHz PWM switching regulator controller |
| HA16108P | 600 kHz PWM switching regulator controller |
| HA16108P | Switching regulator |
| HCD66108BP | (RAM-Provided 165-Channel LCD Driver for Liquid Crystal Dot Matrix Graphics) |
| HD66100D | LCD Driver with 80-Channel Outputs |
| HD66100F | LCD Driver with 80-Channel Outputs |
| HD66100FH | LCD Driver with 80-Channel Outputs |
| HD66108 | (RAM-Provided 165-Channel LCD Driver for Liquid Crystal Dot Matrix Graphics) |
| HD66108T00 | (RAM-Provided 165-Channel LCD Driver for Liquid Crystal Dot Matrix Graphics) |
| HD66108TA0 | (RAM-Provided 165-Channel LCD Driver for Liquid Crystal Dot Matrix Graphics) |
| HD66108TB0 | (RAM-Provided 165-Channel LCD Driver for Liquid Crystal Dot Matrix Graphics) |
| HM5116100 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM5116100S | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM5116100S-6 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM5116100S-7 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM62V16100I | Wide Temperature Range Version |
| HM62V16100LBPI-4 | Wide Temperature Range Version |
| HM62V16100LBPI-4SL | Wide Temperature Range Version |
| HM62V16100LBPI-5SL | Wide Temperature Range Version |
| HM62V16100LTI-4SL | Wide Temperature Range Version |
| HM62V16100LTI-5SL | Wide Temperature Range Version |
| M61006FP | DISTANCE DETECTION SIGNAL PROCESSING FOR 3 V SUPPLY VOLTAGE |
Holtek Semiconductor Inc.
| Part | Description |
| HT7610 | General Purpose PIR Controller |
| HT7610A | General purpose PIR controller |
| HT7610A | General purpose PIR controller |
| HT7610B | General purpose PIR controller |
| HT7610B | General purpose PIR controller |
HONEY
| Part | Description |
| KBPC610 | 1000 V, 6 A single-phase silicon bridge |
HP
| Part | Description |
| 5082-7610 | 7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays |
| ATF-46101 | 2-10GHz medium power gallium arsenide FET |
| HBCR-1610 | Single chip bar code decode IC |
| HEDS-6100-A09 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-A12 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-A13 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-B06 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-B08 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-B09 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
| HEDS-6100-B10 | Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
HUTSN
| Part | Description |
| PS610 | 600V V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier |
| SIPS610 | 600V V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier |
| SPS610 | 600V V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier |
HYNIX
| Part | Description |
| HY57V161610D | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-10 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 100 MHz |
| HY57V161610DTC-10I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 100 MHz |
| HY57V161610DTC-15 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 66 MHz |
| HY57V161610DTC-5 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 200MHz |
| HY57V161610DTC-55 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 183MHz |
| HY57V161610DTC-55I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 183 MHz |
| HY57V161610DTC-6 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 166MHz |
| HY57V161610DTC-6I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 166 MHz |
| HY57V161610DTC-7 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 143 MHz |
| HY57V161610DTC-7I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 143 MHz |
| HY57V161610DTC-8 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 125 MHz |
| HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-10 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-15 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-5 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-55 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-6 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-7 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ETP-10I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 100MHz |
| HY57V161610ETP-15I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 66MHz |
| HY57V161610ETP-55I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 183MHz |
| HY57V161610ETP-5I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 200MHz |
| HY57V161610ETP-6I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 166MHz |
| HY57V161610ETP-7I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz |
| HY57V161610ETP-8I | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 125MHz |
| HY62SF16101C | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101C1 | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101CLLF | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101CLLF-I | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101CSLF | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101CSLF-I | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62UF16101C | 64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF | 64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF-I | 64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF | 64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF-I | 64Kx16bit full CMOS SRAM |
HYTEK
| Part | Description |
| HY5610 | Subminiature controller for thermoelectric cooler |
| HY5610B | TEC controller evaluation board |
ICSI
Integrated Device Technology
| Part | Description |
| IDT72T36105 | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L10BB | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L10BBI | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L4BB | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L5BB | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L5BBI | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L6BB | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L6BBI | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L7BB | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72T36105L7BBI | 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS |
| IDT72V36100 | 3.3 VOLT HIGH-DENSITY SUPERSYNC?? II 36-BIT FIFO |
| IDT72V36100L10PF | 3.3V, high-density, low power, 65536 x 36-bit FIFO, 10ns |
| IDT72V36100L15PF | 3.3V, high-density, low power, 65536 x 36-bit FIFO, 15ns |
| IDT72V36100L15PFI | 3.3V, high-density, low power, 65536 x 36-bit FIFO, 15ns |
| IDT72V36100L7.5PF | 3.3V, high-density, low power, 65536 x 36-bit FIFO, 7.5ns |
| IDT72V36100L75PF | 3.3 VOLT HIGH-DENSITY SUPERSYNC?? II 36-BIT FIFO |
| IDT72V36104 | 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING |
| IDT72V36104L10PF | 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING |
| IDT72V36104L15PF | 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING |
| IDT72V36106 | 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING |
| IDT72V36106L10PF | 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING |
| IDT72V36106L15PF | 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING |
Infineon Technologies AG
Intel
| Part | Description |
| 610 | Pentium processor at iCOMP 610, fractional bus operation - 75-MHz core / 50-MHz bus |
| A610 | Pentium processor at iCOMP 610, fractional bus operation - 75-MHz core / 50-MHz bus |
| INDEX61075MHZ | PENTIUM PROCESSOR at iCOMP INDEX 61075 MHz |
Intersil Corp.
| Part | Description |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8 | 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76107D3S | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
|