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Semiconductor parts containing 607
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MOLEX
| Part | Description |
| 87911-3607 | 2.54mm (.100") Pitch C-Grid?? Header, Right Angle, Through Hole, 36 Circuits, 0.38??m (15??") Gold (Au) Selective Plating, Tube Packaging, Lead-free |
| 91338-3607 | 5.00mm (.197") Pitch Appli-Mate RAST 5 Female Connector, Vertical, 1 Circuit, Yellow, Silver (Ag) Plating, Reference K07 |
| A-70475-0607 | 2.54mm (.100") Pitch SL??? Insulation Displacement Connector Assembly, Male, Single Row, Version D, Back Ribs, for Wire Size 24, 0.38??m (15??") Gold (Au), 13 Circuits |
Mosel Vitelic
| Part | Description |
| MSS0607 | 2.4-5.5V 6 voice VROM |
| MSS0607 | 2.4-6V 6 instant voice ROM |
Motorola
| Part | Description |
| 2N6071 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 200 V. |
| 2N6071 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 200 V. |
| 2N6071A | Bidirectional thyristor, 4 Ampere, 200V |
| 2N6071A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 200 V. |
| 2N6071B | Bidirectional thyristor, 4 Ampere, 200V |
| 2N6071B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 200 V. |
| 2N6072 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6072 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6072A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6072A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6072B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6072B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
| 2N6073 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
| 2N6073 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
| 2N6073A | Bidirectional thyristor, 4 Ampere, 400V |
| 2N6073A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
| 2N6073B | Bidirectional thyristor, 4 Ampere, 400V |
| 2N6073B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
| 2N6074 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6074 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6074A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6074A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6074B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6074B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
| 2N6075 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
| 2N6075 | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
| 2N6075A | Bidirectional thyristor, 4 Ampere, 600V |
| 2N6075A | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
| 2N6075B | Bidirectional thyristor, 4 Ampere, 600V |
| 2N6075B | Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
| AN1607 | ITC122 low voltage micro to motor interface |
| MAC6071 | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
| MAC6071A | Sensitive gate triac |
| MAC6071B | Sensitive gate triac |
| MAC6073A | Sensitive gate triac |
| MAC6073B | Sensitive gate triac |
| MAC6075A | Sensitive gate triac |
| MAC6075B | Sensitive gate triac |
| MC100H607FN | Registered hex PECL/TTL translator |
| MC10H607FN | Registered hex PECL/TTL translator |
| MFC6070 | Audio Amplifier |
| MHW607-1 | The RF Line VHF Power Amplifiers |
| MHW607-3 | The RF Line VHF Power Amplifiers |
| MHW607-4 | The RF Line VHF Power Amplifiers |
| MRF607 | 36V Vcbo, 330mA Ic Low frequency power silicon NPN transistor |
| SN54LS607J | Flip-Flop |
| SN74LS607J | Flip-Flop |
| SN74LS607JD | Flip-Flop |
| SN74LS607JDS | Flip-Flop |
| SN74LS607JS | Flip-Flop |
| SN74LS607N | Flip-Flop |
| SN74LS607ND | Flip-Flop |
| SN74LS607NDS | Flip-Flop |
| SN74LS607NS | Flip-Flop |
MQSEM
| Part | Description |
| VHE2607 | 50A Iout, 500V Vrrm Center-Tapped Positive (Common Cathode) High Speed Rectifier |
Microsemi Corp.
| Part | Description |
| 1N4607 | Signal or Computer Diode |
| 1N6070 | Transient Voltage Suppressor |
| 1N6070A | Transient Voltage Suppressor |
| 1N6071 | Transient Voltage Suppressor |
| 1N6071A | Transient Voltage Suppressor |
| 1N6072 | Transient Voltage Suppressor |
| 1N6072A | Transient Voltage Suppressor |
| 1N6073_04 | VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS |
| 1N6073 | Ultra Fast Rectifier (less than 100ns) |
| 1N6073US | Ultra Fast Rectifier (less than 100ns) |
| 1N6074 | Ultra Fast Rectifier (less than 100ns) |
| 1N6074US | Ultra Fast Rectifier (less than 100ns) |
| 1N6075 | Ultra Fast Rectifier (less than 100ns) |
| 1N6075US | Ultra Fast Rectifier (less than 100ns) |
| 1N6076 | Ultra Fast Rectifier (less than 100ns) |
| 1N6076US | Ultra Fast Rectifier (less than 100ns) |
| 1N6077 | Ultra Fast Rectifier (less than 100ns) |
| 1N6077US | Ultra Fast Rectifier (less than 100ns) |
| 1N6078 | Ultra Fast Rectifier (less than 100ns) |
| 1N6078US | Ultra Fast Rectifier (less than 100ns) |
| 1N6079 | Ultra Fast Rectifier (less than 100ns) |
| 1N6079US | Ultra Fast Rectifier (less than 100ns) |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| GC1607 | CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors |
| JAN1N6070 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6070ATR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6070TR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6071 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6071A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6071ATR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6072 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JAN1N6072A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTX1N6070 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTX1N6070A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTX1N6070TR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTX1N6071A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTX1N6072ATR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6070 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6070TR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6071 | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6071A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6071ATR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6071TR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| JANTXV1N6072ATR | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| MC5607 | 60mA Iout, 10kV Vrrm General Purpose Silicon Rectifier |
| MRF607 | RF NPN Transistor |
| PTC6072 | NPN Darlington Transistors |
| PTC6073 | NPN Darlington Transistors |
| SMCG6070 | Transient Voltage Suppressor |
| SMCG6070A | Transient Voltage Suppressor |
| SMCG6071 | Transient Voltage Suppressor |
| SMCG6071A | Transient Voltage Suppressor |
| SMCG6072 | Transient Voltage Suppressor |
| SMCG6072A | Transient Voltage Suppressor |
| SMCJ6070 | Transient Voltage Suppressor |
| SMCJ6070A | Transient Voltage Suppressor |
| SMCJ6071 | Transient Voltage Suppressor |
| SMCJ6071A | Transient Voltage Suppressor |
| SMCJ6072 | Transient Voltage Suppressor |
| SMCJ6072A | Transient Voltage Suppressor |
| UM9607 | PIN Diode |
MSIEI
| Part | Description |
| GC1607A | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607A-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607A-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607B | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607B-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607B-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607D | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607D-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607D-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607E | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607E-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607E-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607EE | 45V Vrrm, 1.7pF Capacitance Dual Varactor Diode with Common Anode |
| GC1607EE-+2 | 45V Vrrm, 1.7pF Capacitance Dual Varactor Diode with Common Anode |
| GC1607EE-+5 | 45V Vrrm, 1.7pF Capacitance Dual Varactor Diode with Common Anode |
| GC1607F | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607F-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607F-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607H | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607H-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607H-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607T | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607T-+2 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| GC1607T-+5 | 45V Vrrm, 3.3pF Capacitance Varactor Diode |
| ZB607 | 12V Vrrm, 87pF Capacitance Varactor Diode |
NATEL
NEC Electronics Inc.
| Part | Description |
| 2SJ607 | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-S | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-ZJ | MOS FIELD EFFECT TRANSISTOR |
| NE41607 | 35 V, NPN medium power UHF-VHF transistor |
| NX8562LB6074-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. Anode ground. FC-PC connector. |
| NX8562LF6074-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. Anode floating. FC-PC connector. |
| NX8563LB6074-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode ground. |
| NX8563LF6074-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode floating. |
| NX8570SC6070D-BA | 4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). FC-PC connector. |
| NX8570SC6070D-CA | 4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). SC-PC connector. |
| NX8571SC6070D-BA | 4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). FC-PC connector. |
| NX8571SC6070D-CA | 4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). SC-PC connector. |
| PS2607 | Optocoupler, CTR 200-3400% |
| PS2607 | AC input, darlington transistor type photo coupler. High isolation voltage. |
| PS2607 | High isolation voltage AC input, darlington transistor type optocoupler. |
| PS2607L | Optocoupler, CTR 200-3400% |
| PS2607L | AC input, darlington transistor type photo coupler. High isolation voltage. |
| PS2607L | High isolation voltage AC input, darlington transistor type optocoupler. |
| UPA607 | P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
| UPA607T | Pch/MOS FET (2 chips each) |
NELFC
| Part | Description |
| HA2607 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HA607 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS2607 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS2607-30MHZ | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS2607-64.9MHZ | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS607 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS607-30MHZ | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| HS607-64.9MHZ | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
NEWEN
| Part | Description |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
NICHI
National Semiconductor
NTE
| Part | Description |
| NTE1607 | Integrated circuit. B/W TV video detector amplifier, IF AGC circiuit. |
| NTE56070 | TRIAC, 25A, high commutation. Repetitive peak off-state voltage Vdrm = 600V. RMS on-state current 25A. |
| NTE56071 | TRIAC, 25A, high commutation. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 25A. |
| NTE5607 | TRIAC, 4 Amp. Peak repetitive off-state voltage Vdrm = 600V. |
| NTE6070 | Stud mount recfifier. Cathode to case. Peak reverse voltage 1600V. Max forward current 85A. |
| NTE6071 | Stud mount recfifier. Anode to case. Peak reverse voltage 1600V. Max forward current 85A. |
| NTE607 | Forward Reference Diode |
| NTE6072 | Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 1000V. Max forward current 70A. |
| NTE6073 | Industrial silicon recfifier. Anode to case. Max peak reverse voltage 1000V. Max forward current 70A. |
| NTE6074 | Stud mount recfifier. Cathode to case. Peak reverse voltage 200V. Max forward current 85A. |
| NTE6075 | Stud mount recfifier. Anode to case. Peak reverse voltage 200V. Max forward current 85A. |
| NTE6076 | Stud mount recfifier. Cathode to case. Peak reverse voltage 600V. Max forward current 85A. |
| NTE6077 | Stud mount recfifier. Anode to case. Peak reverse voltage 600V. Max forward current 85A. |
| NTE6078 | Stud mount recfifier. Cathode to case. Peak reverse voltage 1200V. Max forward current 85A. |
| NTE6079 | Stud mount recfifier. Anode to case. Peak reverse voltage 1200V. Max forward current 85A. |
Oki Semiconductor
| Part | Description |
| MSM60700 | Digital Gate Array |
OMNI
ON Semiconductor
| Part | Description |
| 2N6071A | Bidirectional thyristor, 4 Ampere, 200V |
| 2N6071B | Bidirectional thyristor, 4 Ampere, 200V |
| 2N6071BG | Sensitive Gate Triacs |
| 2N6071BT | Sensitive Gate Triacs |
| 2N6071BTG | Sensitive Gate Triacs |
| 2N6073A | Bidirectional thyristor, 4 Ampere, 400V |
| 2N6073AG | Sensitive Gate Triacs |
| 2N6073B | Bidirectional thyristor, 4 Ampere, 400V |
| 2N6073BG | Sensitive Gate Triacs |
| 2N6075A | Bidirectional thyristor, 4 Ampere, 600V |
| 2N6075AG | Sensitive Gate Triacs |
| 2N6075B | Bidirectional thyristor, 4 Ampere, 600V |
| 2N6075BG | Sensitive Gate Triacs |
| MC100H607 | Registered Hex PECL/TTL Translator |
| MC100H607FN | Registered hex PECL/TTL Translator |
| MC100H607FNG | BBG ECL TRNSLATR HEX |
| MC100H607FNR2 | BBG ECL TRNSLATR HEX |
| MC100H607FNR2G | BBG ECL TRNSLATR HEX |
| MC10H607 | Registered Hex PECL/TTL Translator |
| MC10H607FN | Registered hex PECL/TTL Translator |
| MC10H607FNG | BBG ECL TRNSLATR HEX |
OPTEK
| Part | Description |
| OPB607A | Reflective object sensor |
| OPB607B | Reflective object sensor |
| OPB607C | Reflective object sensor |
Panasonic (Matsushita)
| Part | Description |
| 1N4607 | Silicon epitaxial planar type diode. |
| 2SB1607 | Silicon PNP epitaxial planar type power transistor |
| AN5607NKP | Video Signal Processor IC for PAL/NTSC Color-TV |
| AN607P | Wide bandwidth video amplifier IC (inverting amplifier) |
| AN6607NS | DC MOTOR FORWARD / REVERSE DUAL SPEED ELECTRONIC GOVEMOR |
| AXK5SA6077YG | NARROW-PITCH CONNECTORS FOR BOARD-TO-FPC CONNECTION |
| MA26077 | Silicon epitaxial planar type |
| MN6076 | Consumer Timekeeping Circuit |
| MN86074 | Image Processing LSI |
PERK
Philips Semiconductors
| Part | Description |
| BUK7607-55B | TrenchMOS standard level FET |
| BUK9607-30B | TrenchMOS logic level FET |
| MO6075B200Z | UHF/Microwave BJTs |
| MO6075B400Z | UHF/Microwave BJTs |
| MS6075B800Z | UHF/Microwave BJTs |
| NE57607 | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607C | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607CDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607E | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607EDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607G | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607GDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607H | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607HDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607K | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607KDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607XDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607Y | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE57607YDH | Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection |
| NE607D | IF Amplifier |
| NE607DK | IF Amplifier |
| NE607N | IF Amplifier |
| PCA1607 | 32 kHz watch circuits with EEPROM |
| PCA1607U/10/F2 | 32 kHz watch circuits with EEPROM |
| PCA1607U | 32 kHz watch circuits with EEPROM |
| PCA1607U | 32 kHz watch circuit with EEPROM |
| PCA1607U/F2 | 32 kHz watch circuits with EEPROM |
| SA607 | Low-voltage high performance mixer FM IF system |
| SA607D | Low-voltage high performance mixer FM IF system |
| SA607D | Low voltage high performance mixer FM IF system. |
| SA607DK | Low-voltage high performance mixer FM IF system |
| SA607DK | Low voltage high performance mixer FM IF system. |
| SA607N | Low-voltage high performance mixer FM IF system |
| TDA3607 | 18 V, multiple voltage regulator with switch |
PIRGO
| Part | Description |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
Plessey Semiconductors
POSEI
| Part | Description |
| AT607 | PHASE CONTROL THYRISTOR |
| AT607S08 | 800 V, 2585 A, 36 kA phase control thyristor |
Princeton Technology Corp.
PWRX
| Part | Description |
| IET26075 | IGBT Power Modules |
| PA430607 | 600V, 700A phase control ac switch thyristor |
| PA431607 | 1600V, 700A phase control ac switch thyristor |
| PD420607 | 600V, 700A general purpose scr/diode module diode |
| PD421607 | 1600V, 700A general purpose scr/diode module diode |
| PD430607 | 600V, 700A phase control dual thyristor |
| PD431607 | 1600V, 700A phase control dual thyristor |
| PD470607 | 600V, 700A general purpose diode/scr diode |
| PD471607 | 1600V, 700A general purpose diode/scr diode |
| R7220607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7220607ASOO | 700A Iout, 600V Vrrm Fast Recovery Rectifier |
| R7220607CS | 600V, 700A fast recovery single diode |
| R7221607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7221607ASOO | 700A Iout, 1.6kV Vrrm Fast Recovery Rectifier |
| R7221607CS | 1600V, 700A fast recovery single diode |
| R7222607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7222607ASOO | 700A Iout, 2.6kV Vrrm Fast Recovery Rectifier |
| R7S20607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7S20607ESOO | 700A Iout, 600V Vrrm Fast Recovery Rectifier |
| R7S21607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7S21607ESOO | 700A Iout, 1.6kV Vrrm Fast Recovery Rectifier |
| R7S22607 | Fast Recovery Rectifier (700 Amperes Average 2600 Volts) |
| R7S22607ESOO | 700A Iout, 2.6kV Vrrm Fast Recovery Rectifier |
QUATR
| Part | Description |
| FGP607 | 6.0A Iout, 1kV Vrrm Fast Recovery Rectifier |
RCA Semiconductors
RECOM
| Part | Description |
| RSZ-0607 | 1 Watt SMD Miniature Isolated Single Output |
| RSZ-0607HP | 1 Watt SMD Miniature Isolated Single Output |
| RSZ-1607 | 1 Watt SMD Miniature Isolated Single Output |
| RSZ-1607HP | 1 Watt SMD Miniature Isolated Single Output |
| RSZ-2607 | 1 Watt SMD Miniature Isolated Single Output |
| RSZ-2607HP | 1 Watt SMD Miniature Isolated Single Output |
RECTR
| Part | Description |
| FR607 | Fast recovery rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 6.0A. |
| RL1607C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 16.0A at Tc=100degC. |
| RS607 | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 6.0A at Tc=75degC |
| RS607M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 6.0A at Tc=100degC |
RENES
| Part | Description |
| H7N0607DL | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0607DL-E | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0607DSTL-E | Silicon N Channel MOS FET High Speed Power Switching |
| H8S2607 | 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series |
| HD6432607 | 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series |
| HD64F2607 | 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series |
| HD64F36074L | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| HD64F36077G | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| HD64F36077L | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| HD64F36078G | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| HD64F36078L | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| HD64F36079L | Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series |
| RJE0607JSP-00-J0 | Silicon P Channel MOS FET Series Power Switching |
| RJE0607JSP | Silicon P Channel MOS FET Series Power Switching |
| RKV607KL | Variable Capacitance Diode for VCO |
| RKV607KP | Variable Capacitance Diode for VCO |
| RQK0607AQDQS | Silicon N Channel MOS FET Power Switching |
| RQK0607AQDQSTL-E | Silicon N Channel MOS FET Power Switching |
RFE
| Part | Description |
| FR607 | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
| FR607G | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
| GP1607 | LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers |
| HERA1607G | LEADED (THRU-HOLE) High Efficiency & Super Fast Rectifiers |
RF Micro Devices
| Part | Description |
| RF2607 | CDMA/FM receive AGC amplifier |
| RF2607PCBA | CDMA/FM receive AGC amplifier |
RHMBS
| Part | Description |
| L-11607 | Low & Medium Power Common Mode Inductors |
| SH6G-0607 | SH6G Series Mini 6-Pin SMD Passive Delay Modules / AML1 Series Mini 16-Pin 50-mil SMD Passive Delay Modules |
| SP24A-607 | SP24A Series 20-Tap High Performance Passive Delay Modules |
ROHM Co.
| Part | Description |
| BA7607 | Video signal switcher |
| BA7607F | Video signal switcher |
| BD6072HFN | Synchronous rectification step-up DC/DC converter for mobile phone |
| BD6607KN | System Motor Driver for Portable MD |
| BH76071FJ | Silicon Monolithic Integrated Circuit |
Semelab Plc.
| Part | Description |
| 2N6077 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| 2N6078 | NPN MULTI-EPITAXIAL POWER TRANSISTOR |
| 2N6079 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| BU607 | 330V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| SF_2N6077 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| SF_2N6079 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| SML6070AN | MOSFETs and TempFETs |
| SML6070BN | MOSFETs and TempFETs |
| SML6070CN | MOSFETs and TempFETs |
SAMES
| Part | Description |
| PM9607AP | Energy Meter Evaluation Module |
| SA9607M | Single Phase Power/Energy Metering IC with Tamper Detection |
| SA9607MPA | Single phase power/enrgy metering IC with tamper detection |
| SA9607MSA | Single phase power/enrgy metering IC with tamper detection |
| SA9607P | Programmable Single Phase Energy Metering IC with Tamper Detection |
| SA9607PPA | Programmable single phase energy metering IC with tamper detection |
| SA9607PSA | Programmable single phase energy metering IC with tamper detection |
SANYO Electric Co., Ltd.
| Part | Description |
| 2SA1607-3 | Transistors, Bipolar, Si PNP Low-Pwr HF |
| 2SA1607-4 | Transistors, Bipolar, Si PNP Low-Pwr HF |
| 2SA1607 | PNP epitaxial planar silicon transistor, high-voltage switching application |
| 2SC5607 | NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications |
| CPH6071 | Video Output Driver,High-Frequency Amplifier Applications |
| CPH6074 | For VHF frequency conversion, local oscillation |
| ECH8607 | N CHANNEL MOS SILICON TRANSISTOR |
| F607 | PNP epitaxial silicon transistor, high-current switching application |
| FX607 | Ultrahigh-Speed Switching, Motor Driver Applications |
| LA3607 | 7-band graphic equalizer |
| LA5607 | BS/CS tuner regulator with reset function |
| LA76070 | NTSC color television ic |
| LA76075 | V(cc): 9.6V; 25mA; 1.5W; NTSC color television set |
| MCH6607 | Ultrahigh-Speed Switching Applications |
| VEC2607 | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
SCHRT
| Part | Description |
| 0034.5607.xx | Surface Mount Fuse, 5 x 20 mm, Time-Lag T, L, 250 VAC, Au plating |
| 0034.6073 | Subminiature Fuse, 8.5 mm, Quick-Acting F, 250 VAC, 250 VDC |
| 0034.6074 | Subminiature Fuse, 8.5 mm, Quick-Acting F, 250 VAC, 250 VDC |
| 0034.6076 | Subminiature Fuse, 8.5 mm, Quick-Acting F, 250 VAC, 250 VDC |
| 0034.6077 | Subminiature Fuse, 8.5 mm, Quick-Acting F, 250 VAC, 250 VDC |
| 0034.6079 | Subminiature Fuse, 8.5 mm, Quick-Acting F, 250 VAC, 250 VDC |
| 0034.6607 | Subminiature Fuse, 8.5 mm, Time-Lag T, 250 VAC, 35 A |
| 0607 | Interconnection Cord with IEC Plug E, Angled |
| 6075 | IEC Appliance Inlet C10, Screw-on Mounting, Front Side, Solder or Quick-connect Terminal |
| 6075-H-ABC0-D-E | IEC Appliance Inlet C10, Screw-on Mounting, Front Side, Solder or Quick-connect Terminal |
| 6076 | IEC Appliance Inlet C10, Screw-on Mounting, Front Side, Solder or Quick-connect Terminal |
| 8020.0607 | Cartridge Fuse, 6.3x32 mm, low resistance, up to 30 A |
| 8020.0607.PT | Axial Lead Fuse, 6.3x32 mm, low resistance, up to 30 A |
Semtech Corp.
| Part | Description |
| 1N6073 | Half Wave Discrete Rectifiers |
| 1N6074 | Half Wave Discrete Rectifiers |
| 1N6075 | Half Wave Discrete Rectifiers |
| 1N6076 | Half Wave Discrete Rectifiers |
| 1N6077 | Half Wave Discrete Rectifiers |
| 1N6078 | Half Wave Discrete Rectifiers |
| 1N6079 | Half Wave Discrete Rectifiers |
| F1N6074 | 1.8A Iout, 100V Vrrm Fast Recovery Rectifier |
| F1N6075 | 1.8A Iout, 150V Vrrm Fast Recovery Rectifier |
| FX1N6074 | 1.8A Iout, 100V Vrrm Fast Recovery Rectifier |
| FX1N6075 | 1.8A Iout, 150V Vrrm Fast Recovery Rectifier |
| SC4607 | Very Low Input, MHz Operation, High-Efficiency Synchronous Buck |
| SC4607IMSTR | Very Low Input, MHz Operation, High-Efficiency Synchronous Buck |
| SC4607IMSTRT | Very Low Input, MHz Operation, High-Efficiency Synchronous Buck |
SENTE
| Part | Description |
| BTE6070A1 | Precision stainless steel pressure transmitters |
| BTE6070A5 | Precision stainless steel pressure transmitters |
| BTE6070G0 | Precision stainless steel pressure transmitters |
| BTE6070G1 | Precision stainless steel pressure transmitters |
| BTE6070G4 | Precision stainless steel pressure transmitters |
| BTE6070G5 | Precision stainless steel pressure transmitters |
| KTUM6070G4CXS | OEM submersible pressure transducers |
SILAN
SILTR
| Part | Description |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| SNF20607 | MOSFET Power Modules |
| SNF60708 | MOSFET Power Modules |
| SNF60709 | MOSFET Power Modules |
| SNF60712 | MOSFET Power Modules |
SINO
| Part | Description |
| SFR607 | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
| SFR607G | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
Semicon Components Inc.
| Part | Description |
| 1N1607 | 18V, 10Wt General purpose voltage reference/regulator diode |
| 1N1607A | 18V, 10Wt General purpose voltage reference/regulator diode |
| 1N6070 | 190V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6070A | 190V Vbr, 5.4A Ipp bidirectional transient voltage suppressor |
| 1N6071 | 200V Vbr, 4.9A Ipp bidirectional transient voltage suppressor |
| 1N607 | 800mA Iout, 50V Vrrm General Purpose Silicon Rectifier |
| 1N6071A | 200V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6072 | 220V Vbr, 4.3A Ipp bidirectional transient voltage suppressor |
| 1N6072A | 220V Vbr, 4.6A Ipp bidirectional transient voltage suppressor |
| 1N607A | 800mA Iout, 50V Vrrm General Purpose Silicon Rectifier |
| SUES2607 | 25A Iout, 500V Vrrm Fast Recovery Rectifier |
| SUES607 | 25A Iout, 500V Vrrm Fast Recovery Rectifier |
Siemens
| Part | Description |
| C67078-A1607-A2 | main ratings |
| C67078-A1607-A3 | main ratings |
| Q60702-S111 | PNP SILICON PLANAR TRANSISTORS |
| Q62607-S60 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q62607-S61 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q62702-B607 | Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance) |
| Q62702-C2607 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-P1607 | NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
| Q67000-A6072 | GSM Receiver Circuit |
| Q67006-A6072 | GSM Receiver Circuit |
| Q67100-Q607 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
SMTC
| Part | Description |
| Z6075 | 75V Vbr, 13.9A Ipp bidirectional transient voltage suppressor |
| Z6075A | 75V Vbr, 14.6A Ipp bidirectional transient voltage suppressor |
| Z6075U | 75V Vbr, 13.9A Ipp transient voltage suppressor |
| Z6075UA | 75V Vbr, 14.6A Ipp transient voltage suppressor |
SMTUK
| Part | Description |
| 1N6070 | 190V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6070A | 190V Vbr, 5.4A Ipp bidirectional transient voltage suppressor |
| 1N6071 | 200V Vbr, 4.9A Ipp bidirectional transient voltage suppressor |
| 1N6071A | 200V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6072 | 220V Vbr, 4.3A Ipp bidirectional transient voltage suppressor |
| 1N6072A | 220V Vbr, 4.6A Ipp bidirectional transient voltage suppressor |
| FR607 | 6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier |
Solitron Devices
| Part | Description |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| SDT7607 | 60V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| SDT85607 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
SONY Semiconductors
| Part | Description |
| CXD3607R | Timing Generator for Progressive Scan |
SSDI
| Part | Description |
| 2N6607 | 100V V[drm] Max., 275mA I[T] Max. Silicon Controlled Rectifier |
| SDR607 | 700 V, 15 A ultra fast recovery rectifier |
| SHA2607 | 500 V, 30 A ultra fast centertap rectifier |
STANL
| Part | Description |
| AABG4607K | Bi-color Rectangular Shape Type |
| VRBG4607K | Bi-color Rectangular Shape Type |
| VRPG4607K | Bi-color Rectangular Shape Type |
| VRPY4607K | Bi-color Rectangular Shape Type |
STI
| Part | Description |
| 2N6077 | 300V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6078 | 275V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
| 2N6079 | 375V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
STIND
| Part | Description |
| 1N6070 | 190V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6070A | 190V Vbr, 5.4A Ipp bidirectional transient voltage suppressor |
| 1N6071 | 200V Vbr, 4.9A Ipp bidirectional transient voltage suppressor |
| 1N6071A | 200V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6072 | 220V Vbr, 4.3A Ipp bidirectional transient voltage suppressor |
| 1N6072A | 220V Vbr, 4.6A Ipp bidirectional transient voltage suppressor |
SGS-Thomson Microelectronics
| Part | Description |
| 1N6070 | 190V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6070A | 190V Vbr, 5.4A Ipp bidirectional transient voltage suppressor |
| 1N6071 | 200V Vbr, 4.9A Ipp bidirectional transient voltage suppressor |
| 1N6071A | 200V Vbr, 5.1A Ipp bidirectional transient voltage suppressor |
| 1N6072 | 220V Vbr, 4.3A Ipp bidirectional transient voltage suppressor |
| 1N6072A | 220V Vbr, 4.6A Ipp bidirectional transient voltage suppressor |
| TDE1607CM | Interface circuit - relay and lamp-driver |
| TDE1607DP | Interface circuit - relay and lamp-driver |
| TDE1607FP | INTERFACE CIRCUIT - RELAY AND LAMP-DRIVER |
| TDF1607CM | INTERFACE CIRCUIT - RELAY AND LAMP-DRIVER |
| TDF1607DP | Interface circuit - relay and lamp-driver |
| TDF1607FP | INTERFACE CIRCUIT - RELAY AND LAMP-DRIVER |
| TYS607-05 | 50V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| TYS607-1 | 100V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| TYS607-2 | 200V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| TYS607-4 | 400V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| TYS607-6 | 600V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| TYS607-8 | 800V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier |
| Z00607 | Standard 0.8 A Triacs |
| Z00607DA1BA2 | SENSITIVE GATE TRIACS |
| Z00607DA | SENSITIVE GATE TRIACS |
| Z00607MA1BA2 | The Z00607MA is suitable for low power AC switching applications such as fan speed small light controllers |
| Z00607MA2BL2 | The Z00607MA is suitable for low power AC switching applications such as fan speed small light controllers |
| Z00607MA | SENSITIVE GATE TRIACS |
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