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More than
1 000 000
components listed

    Semiconductor parts containing 607 in root number. Page 2.
To find data on parts with other root numbers, select here:
000 to 099
100 to 199
200 to 299
300 to 399
400 to 499
 500 to 599
600 to 699
700 to 799
800 to 899
900 to 999
PERK
PartDescription
GMAD2S0607Hybrid Pulsed Laser Module
GMAD3S0607Hybrid Pulsed Laser Module
MGAD1S0607Hybrid Pulsed Laser Module
MGAD2S0607Hybrid Pulsed Laser Module
MGAD3S0607Hybrid Pulsed Laser Module

Philips Semiconductors
PartDescription
BUK7607-55BTrenchMOS standard level FET
BUK9607-30BTrenchMOS logic level FET
NE57607Two-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607CTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607CDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607ETwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607EDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607GTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607GDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607HTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607HDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607KTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607KDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607XDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607YTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
NE57607YDHTwo-cell Lithium-ion battery protection with overcurrent, over- and under-voltage protection
PCA160732 kHz watch circuits with EEPROM
PCA1607U32 kHz watch circuit with EEPROM
PCA1607U32 kHz watch circuits with EEPROM
PCA1607U/10/F232 kHz watch circuits with EEPROM
PCA1607U/F232 kHz watch circuits with EEPROM
SA607Low-voltage high performance mixer FM IF system
SA607DLow voltage high performance mixer FM IF system.
SA607DLow-voltage high performance mixer FM IF system
SA607DKLow voltage high performance mixer FM IF system.
SA607DKLow-voltage high performance mixer FM IF system
SA607NLow-voltage high performance mixer FM IF system
TDA360718 V, multiple voltage regulator with switch

POSEI
PartDescription
AT607PHASE CONTROL THYRISTOR
AT607S08800 V, 2585 A, 36 kA phase control thyristor

Princeton Technology Corp.
PartDescription
PT2607Remote control encoder IC
PT2607Remote control encoder IC
PT6607LCD driver IC
PT6607-HLCD driver IC

PWRX
PartDescription
PA430607600V, 700A phase control ac switch thyristor
PA4316071600V, 700A phase control ac switch thyristor
PD420607600V, 700A general purpose scr/diode module diode
PD4216071600V, 700A general purpose scr/diode module diode
PD430607600V, 700A phase control dual thyristor
PD4316071600V, 700A phase control dual thyristor
PD470607600V, 700A general purpose diode/scr diode
PD4716071600V, 700A general purpose diode/scr diode
R7220607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7220607ASOO700A Iout, 600V Vrrm Fast Recovery Rectifier
R7220607CS600V, 700A fast recovery single diode
R7221607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7221607ASOO700A Iout, 1.6kV Vrrm Fast Recovery Rectifier
R7221607CS1600V, 700A fast recovery single diode
R7222607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7222607ASOO700A Iout, 2.6kV Vrrm Fast Recovery Rectifier
R7S20607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7S20607ESOO700A Iout, 600V Vrrm Fast Recovery Rectifier
R7S21607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7S21607ESOO700A Iout, 1.6kV Vrrm Fast Recovery Rectifier
R7S22607Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
R7S22607ESOO700A Iout, 2.6kV Vrrm Fast Recovery Rectifier

QUATR
PartDescription
FGP6076.0A Iout, 1kV Vrrm Fast Recovery Rectifier

RECTR
PartDescription
FR607Fast recovery rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 6.0A.
RL1607CGlass passivated silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 16.0A at Tc=100degC.
RS607Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 6.0A at Tc=75degC
RS607MSingle-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 6.0A at Tc=100degC

RFE
PartDescription
FR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier
FR607G6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

RF Micro Devices
PartDescription
RF2607CDMA/FM receive AGC amplifier
RF2607PCBACDMA/FM receive AGC amplifier

ROHM Co.
PartDescription
BA7607Video signal switcher
BA7607FVideo signal switcher

Semelab Plc.
PartDescription
2N6077Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
2N6078NPN MULTI-EPITAXIAL POWER TRANSISTOR
2N6079Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
SF_2N6077Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
SF_2N6079Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

SAMES
PartDescription
PM9607APEnergy Meter Evaluation Module
SA9607MSingle Phase Power/Energy Metering IC with Tamper Detection
SA9607MPASingle phase power/enrgy metering IC with tamper detection
SA9607MSASingle phase power/enrgy metering IC with tamper detection
SA9607PProgrammable Single Phase Energy Metering IC with Tamper Detection
SA9607PPAProgrammable single phase energy metering IC with tamper detection
SA9607PSAProgrammable single phase energy metering IC with tamper detection

SANYO Electric Co., Ltd.
PartDescription
2SA1607PNP epitaxial planar silicon transistor, high-voltage switching application
2SC5607NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications
CPH6071Video Output Driver,High-Frequency Amplifier Applications
ECH8607N CHANNEL MOS SILICON TRANSISTOR
F607PNP epitaxial silicon transistor, high-current switching application
FX607Ultrahigh-Speed Switching, Motor Driver Applications
LA36077-band graphic equalizer
LA5607BS/CS tuner regulator with reset function
LA76070NTSC color television ic
LA76075V(cc): 9.6V; 25mA; 1.5W; NTSC color television set
MCH6607Ultrahigh-Speed Switching Applications

Semtech Corp.
PartDescription
1N6073Half Wave Discrete Rectifiers
1N6074Half Wave Discrete Rectifiers
1N6075Half Wave Discrete Rectifiers
1N6076Half Wave Discrete Rectifiers
1N6077Half Wave Discrete Rectifiers
1N6078Half Wave Discrete Rectifiers
1N6079Half Wave Discrete Rectifiers
F1N60741.8A Iout, 100V Vrrm Fast Recovery Rectifier
F1N60751.8A Iout, 150V Vrrm Fast Recovery Rectifier
FX1N60741.8A Iout, 100V Vrrm Fast Recovery Rectifier
FX1N60751.8A Iout, 150V Vrrm Fast Recovery Rectifier
SC4607Very Low Input, MHz Operation, High-Efficiency Synchronous Buck
SC4607IMSTRVery Low Input, MHz Operation, High-Efficiency Synchronous Buck
SC4607IMSTRTVery Low Input, MHz Operation, High-Efficiency Synchronous Buck

SINO
PartDescription
SFR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier
SFR607G6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

Semicon Components Inc.
PartDescription
1N160718V, 10Wt General purpose voltage reference/regulator diode
1N1607A18V, 10Wt General purpose voltage reference/regulator diode
1N607800mA Iout, 50V Vrrm General Purpose Silicon Rectifier
1N607A800mA Iout, 50V Vrrm General Purpose Silicon Rectifier
SUES260725A Iout, 500V Vrrm Fast Recovery Rectifier
SUES60725A Iout, 500V Vrrm Fast Recovery Rectifier

Siemens
PartDescription
C67078-A1607-A2main ratings
C67078-A1607-A3main ratings
Q60702-S111PNP SILICON PLANAR TRANSISTORS
Q62607-S60Silizium-Fotoelement Silicon Photovoltaic Cell
Q62607-S61Silizium-Fotoelement Silicon Photovoltaic Cell
Q62702-B607Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance)
Q62702-C2607NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Q62702-P1607NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
Q67100-Q607256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

SMTUK
PartDescription
FR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

SONY Semiconductors
PartDescription
CXD3607RTiming Generator for Progressive Scan

SSDI
PartDescription
2N6607100V V[drm] Max., 275mA I[T] Max. Silicon Controlled Rectifier
SDR607700 V, 15 A ultra fast recovery rectifier
SHA2607500 V, 30 A ultra fast centertap rectifier

SGS-Thomson Microelectronics
PartDescription
TDE1607CMInterface circuit - relay and lamp-driver
TDE1607DPInterface circuit - relay and lamp-driver
TDE1607FPINTERFACE CIRCUIT - RELAY AND LAMP-DRIVER
TDF1607CMINTERFACE CIRCUIT - RELAY AND LAMP-DRIVER
TDF1607DPInterface circuit - relay and lamp-driver
TDF1607FPINTERFACE CIRCUIT - RELAY AND LAMP-DRIVER
TYS607-0550V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS607-1100V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS607-2200V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS607-4400V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS607-6600V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS607-8800V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
Z00607DASENSITIVE GATE TRIACS
Z00607DA1BA2SENSITIVE GATE TRIACS
Z00607MASENSITIVE GATE TRIACS
Z00607MA1BA2The Z00607MA is suitable for low power AC switching applications such as fan speed small light controllers
Z00607MA2BL2The Z00607MA is suitable for low power AC switching applications such as fan speed small light controllers
Z00607MA5BL2The Z00607MA is suitable for low power AC switching applications such as fan speed small light controllers

Semitronics Corp.
PartDescription
1N160718V, 10Wt General purpose voltage reference/regulator diode
1N1607A18V, 10Wt General purpose voltage reference/regulator diode
1N1607R18V, 10Wt General purpose voltage reference/regulator diode

SURGE
PartDescription
KBU6071000 V, 6.0 A single phase silicon bridge rectifier
SB6071000 V, 6.0 A silicon bridge

TAG
PartDescription
S0607BH200V V[drm] Max., 3.8A I[T] Max. Silicon Controlled Rectifier
S0607DH400V V[drm] Max., 3.8A I[T] Max. Silicon Controlled Rectifier
S0607MH600V V[drm] Max., 3.8A I[T] Max. Silicon Controlled Rectifier
S0607NH800V V[drm] Max., 3.8A I[T] Max. Silicon Controlled Rectifier

TECOR
PartDescription
D6070W45A Iout, 600V Vrrm General Purpose Silicon Rectifier
S6070WThyristor, 70 amperes, 600 volt
S6070W600 V, 70 A SCR

TERRY
PartDescription
FR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

THOMS
PartDescription
SK360715A Iout, 50V Vrrm General Purpose Silicon Rectifier
SK607120V, 50Wt General purpose voltage reference/regulator diode

Texas Instruments
PartDescription
5962-88607013A16-Bit Shift Registers
5962-8860701JA16-Bit Shift Registers
5962-8860701KA 16-BIT SHIFT REGISTERS
81036072A STANDARD HIGH-SPEED PAL(R) CIRCUITS
8103607RAStandard High-Speed PAL<R> Circuits
8103607SAStandard High-Speed PAL<R> Circuits
86076012ASynchronous 4-Bit Binary Counters
8607601EASynchronous 4-Bit Binary Counters
8607601FA SYNCHRONOUS 4-BIT BINARY COUNTERS
8607701CAHigh Speed CMOS Logic 9-Bit Odd/Even Parity Generator/Checker
JM38510/30607B2A 4-BIT CASCADABLE SHIFT REGISTERS WITH 3-STATE OUTPUTS
JM38510/30607BEA 4-BIT CASCADABLE SHIFT REGISTERS WITH 3-STATE OUTPUTS
JM38510/50607BRA LOW-POWER HIGH-PERFORMANCE IMPACT(TM) PAL(R) CIRCUITS
SN54LS607OCTAL 2 INPUT MULTIPLEXED LATES
SN74LS607OCTAL 2 INPUT MULTIPLEXED LATES
THS6072LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072CD LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072CDGN LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072CDGNG4Low-Power ADSL Differential Receiver
THS6072CDGNR LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072CDGNRG4Low-Power ADSL Differential Receiver
THS6072CDR LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072CDRG4Low-Power ADSL Differential Receiver
THS6072DLOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072DGNLOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072EVMLOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072ID LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072IDGN LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072IDGNR LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072IDGNRG4Low-Power ADSL Differential Receiver
THS6072IDR LOW-POWER ADSL DIFFERENTIAL RECEIVER
THS6072IDRG4Low-Power ADSL Differential Receiver
TIP607-100 V, -10 A, 100 W, PNP darlington-connected silicon power transistor
TL607P MOS ANALOG SWITCHES
TL607C30V; 10mA; P-MOS analog switch
TL607CPPMOS Analog Switch
TL607I30V; 10mA; P-MOS analog switch
TL607M30V; 10mA; P-MOS analog switch
UC5607Plug and Play, 18-Line SCSI Active Terminator
UC5607DWP 18-LINE SE TERMINATOR FOR SCSI AND FAST SCSI WITH PLUG & PLAY SUPPORT
UC5607DWPTR 18-LINE SE TERMINATOR FOR SCSI AND FAST SCSI WITH PLUG & PLAY SUPPORT
V62/03607-01XEMilitary Enhanced Plastic Octal Buffers And Line Drivers With 3-State Outputs
V62/03607-02XEMilitary Enhanced Plastic Octal Buffers And Line Drivers With 3-State Outputs
V62/03607-02YEMilitary Enhanced Plastic Octal Buffers And Line Drivers With 3-State Outputs
V62/04607-01XEMilitary Enhanced Plastic Fixed-Point Digital Signal Processor
V62/05607-03XAMilitary Enhanced Plastic Fixed-Point Digital Signal Processor
V62/06607-02XEMilitary Enhanced Plastic Family of 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier

Torex Semiconductor
PartDescription
XC910607PWM Control, PWM/PFM Switching Control, Step-up DC/DC Converters

Toshiba
PartDescription
1N4607200mA Iout, 85V Vrrm Fast Recovery Rectifier
2SC3607Silicon NPN transistor for VHF-UHF band low noise amplifier applications
2SK2607Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications
RN1607TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN2607TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN4607TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

TRACO
PartDescription
TSC6070Input voltage range:160-320V output voltage 5V (80A) DC/DC converter
TSC6072Input voltage range:160-320V output voltage 12V (40A) DC/DC converter
TSC6074Input voltage range:160-320V output voltage 24V (20A) DC/DC converter
TSC6077Input voltage range:160-320V output voltage 110V (4A) DC/DC converter
TSC6078Input voltage range:160-320V output voltage 220V (2A) DC/DC converter
TSC6079Input voltage range:160-320V output voltage 48V (9A) DC/DC converter

TSC
PartDescription
CR6076.0A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier

UFOTT
PartDescription
FR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

UTMC
PartDescription
5962D9960701QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960701QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960701QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960701QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960701QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960701QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960701TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960701TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960701TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960701TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960701TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960701TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960702QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960702QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960702QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960702QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960702QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960702QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960702TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960702TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960702TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960702TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960702TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960702TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960703QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960703QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960703QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960703QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960703QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960703QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960703TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960703TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960703TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960703TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960703TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960703TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960704QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960704QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960704QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960704QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960704QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960704QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960704TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960704TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960704TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962D9960704TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
5962D9960704TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
5962D9960704TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
5962L9960701QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960701QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960701QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960701QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960701QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960701QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960701TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960701TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960701TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960701TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960701TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960701TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960702QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960702QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960702QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960702QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960702QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960702QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960702TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960702TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960702TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960702TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960702TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960702TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960703QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960703QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960703QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960703QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960703QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960703QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960703TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960703TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960703TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960703TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960703TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960703TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960704QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960704QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960704QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960704QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960704QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960704QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960704TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960704TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960704TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962L9960704TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
5962L9960704TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
5962L9960704TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
5962P9960701QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960701QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960701QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960701QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960701QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960701QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960701TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960701TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960701TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960701TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960701TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960701TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960702QUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960702QUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960702QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960702QXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960702QXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960702QXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960702TUA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960702TUC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960702TUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960702TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960702TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960702TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960703QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960703QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960703QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960703QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960703QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960703QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960703TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960703TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960703TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960703TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960703TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960703TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960704QUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960704QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960704QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960704QXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960704QXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960704QXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960704TUA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960704TUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960704TUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960704TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
5962P9960704TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
5962P9960704TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)

VISAY
PartDescription
TFBS5607Integrated Low Profile Transceiver Module for Telekom Applications 9.6 kbit/s to 1.152 Mbit/s Data Transmission Rate
TFBS5607-TR3Integrated Low Profile Transceiver Module for Telekom Applications 9.6 kbit/s to 1.152 Mbit/s Data Transmission Rate

WAYTC
PartDescription
SFR6076.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier
SFR607G6.0A Iout, 1.0kV Vrrm Fast Recovery Rectifier

WTE
PartDescription
FR1607G16A fast recovery glass passived rectifier
FR1607G1000V, 16A fast recovery glass passived rectifier
FR6071000V, 6.0A fast recovery rectifier
FR607-T31000V, 6.0A fast recovery rectifier
HER1607G800V, 16A high efficiency glass passivated rectifier
HER1607PT800V, 16A high efficiency glass passivated rectifier
HER607800V, 6.0A high efficiency rectifier
HER607-T3800V, 6.0A high efficiency rectifier
SFR607Reverse voltage: 1000.00V; 6.0A soft fast recovery rectifier
SFR607-T3Reverse voltage: 1000.00V; 6.0A soft fast recovery rectifier
SFR607-TBReverse voltage: 1000.00V; 6.0A soft fast recovery rectifier

Z-Communications, Inc.
PartDescription
V607TE011279-1313 MHz VCO (Voltage Controlled Oscillator)
V607TE021404-1439 MHz VCO (Voltage Controlled Oscillator)

ZRLNK
PartDescription
SP8607emitter coupled logic divider
SP8607ACCMemitter coupled logic divider
SP8607ACMemitter coupled logic divider
SP8607BCMemitter coupled logic divider



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