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Semiconductor parts containing 603
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Advanced Analogic Technologies
ACT
| Part | Description |
| ACT8603 | Radiation Hardened 50 Watt Power Supply Module |
Analog Devices
| Part | Description |
| 5962-86716032A | LC2MOS ± 15 V High Speed, Quad SPST Switch |
| 5962-8671603EA | LC2MOS ± 15 V High Speed, Quad SPST Switch |
| AD603 | Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems |
| AD603-EB | Low Noise, 90 MHz Variable-Gain Amplifier |
| AD603ACHIPS | Low noise, 90 MHz variable-gain amplifier |
| AD603AQ | Low noise, 90 MHz variable-gain amplifier |
| AD603AR | Low noise, 90 MHz variable-gain amplifier |
| AD603AR-REEL | Low noise, 90 MHz variable-gain amplifier |
| AD603AR-REEL7 | Low noise, 90 MHz variable-gain amplifier |
| AD603ARZ | Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems |
| AD603ARZ-REEL | Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems |
| AD603ARZ-REEL7 | Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems |
| AD603SQ/883B | Low noise, 90 MHz variable-gain amplifier |
| AD8603 | Precision Micropower Low Noise CMOS Rail-Rail Input/Output Operational Amplifiers |
| AD8603AUJ-R2 | Precision Micropower Low Noise CMOS Rail-Rail Input/Output Operational Amplifiers |
| AD8603AUJ-REEL | Precision Micropower Low Noise CMOS Rail-Rail Input/Output Operational Amplifiers |
| AD8603AUJ-REEL7 | Precision Micropower Low Noise CMOS Rail-Rail Input/Output Operational Amplifiers |
| AD8603AUJZ-R2 | Precision Single MicroPower Rail to Rail Input/Output Low Noise CMOS Operational Amplifier |
| AD8603AUJZ-REEL | Precision Single MicroPower Rail to Rail Input/Output Low Noise CMOS Operational Amplifier |
| AD8603AUJZ-REEL7 | Precision Single MicroPower Rail to Rail Input/Output Low Noise CMOS Operational Amplifier |
| ADCMP603 | Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in a 12-lead LSCFP Package. |
| ADCMP603BCP-WP | Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in a 12-lead LSCFP Package. |
| ADCMP603BCPZ-R2 | Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in a 12-lead LSCFP Package. |
| ADCMP603BCPZ-R7 | Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in a 12-lead LSCFP Package. |
| ADCMP603BCPZ-WP | Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in a 12-lead LSCFP Package. |
| ADP3603 | Switched Capacitor Voltage Converter w/Regulated Output - up to 50mA |
| ADP3603AR | Switched Capacitor Voltage Converter with Regulated Output |
Advanced Power Technology
| Part | Description |
| APT6030BN | 600V, 23A power MOS IV transistor |
| APT6030BVFR | 600V, 21A power MOS V transistor |
| APT6030BVR | 600V, 21A power MOS V transistor |
| APT6032AVR | 600V, 17.5A power MOS V transistor |
| APT6033BN | 600V, 22A power MOS IV transistor |
| APT6035 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035AVR | 600V, 16A power MOS V transistor |
| APT6035BN | 600V, 19A power MOS IV transistor |
| APT6035BVR | 600V, 18A power MOS V transistor |
| APT6035SVR | 600V, 18A power MOS V transistor |
| APT6037HVR | 600V, 15.5A power MOS V transistor |
| APT6038BFLL | 600V, 17A power MOS 7 transistor |
| APT6038BLL | 600V, 17A power MOS 7 transistor |
| APT6038SFLL | 600V, 17A power MOS 7 transistor |
| APT6038SLL | 600V, 17A power MOS 7 transistor |
Advanced Semiconductor, Inc
| Part | Description |
| AHV8603 | 10V Vrrm, 14pF Capacitance Varactor Diode |
| ASI10603 | NPN SILICON RF POWER TRANSISTOR |
| ASITPV6030 | NPN SILICON RF POWER TRANSISTOR |
| TPV6030 | NPN SILICON RF POWER TRANSISTOR |
ALIED
| Part | Description |
| GP603 | 6.0A Iout, 300V Vrrm General Purpose Silicon Rectifier |
| RP603 | 6.0A Iout, 300V Vrrm Fast Recovery Rectifier |
| UP603 | 5.0A Iout, 300V Vrrm Fast Recovery Rectifier |
Austria Mikro Systeme Int.
Anachip Corp.
ANSAL
| Part | Description |
| AT603S16 | 1.6kV V[drm] Max., 720A I[T] Max. Silicon Controlled Rectifier |
| AT603X16 | 1.6kV V[drm] Max., 720A I[T] Max. Silicon Controlled Rectifier |
Atmel Corporation
| Part | Description |
| ATMEGA603 | 8-Bit Microcontroller with 64K/128K Bytes In-System Programmable Flash |
| ATmega603-6AC | 8-bit microcontroller with 64K bytes in-system programmable flash, 4.0-5.5V power supply |
| ATmega603-6AI | 8-bit microcontroller with 64K bytes in-system programmable flash, 4.0-5.5V power supply |
| ATMEGA603L | 8-Bit Microcontroller with 64K/128K Bytes In-System Programmable Flash |
| ATmega603L-4AC | 8-bit microcontroller with 64K bytes in-system programmable flash, 2.7-3.6V power supply |
| ATmega603L-4AI | 8-bit microcontroller with 64K bytes in-system programmable flash, 2.7-3.6V power supply |
| TSPC603R | 32-bit RISC Microprocessor, 166-300 MHz |
| U6032B | Automotive toggle switch IC. |
| U6032B-FP | Automotive toggle switch IC. |
| U6032B-MFPG3Y | Toggle IC for switch-over function |
| U6032B-MFPY | Toggle IC for switch-over function |
| U6032B-MY | Toggle IC for switch-over function |
Burr-Brown Corp.
| Part | Description |
| OPA603 | High Speed, Current-Feedback, High Voltage OPERATIONAL AMPLIFIER |
| OPA603AP | High Speed, Current-Feedback Operational Amplifier |
| OPA603AU | High Speed, Current-Feedback Operational Amplifier |
| OPA603AU/1K | High Speed, Current-Feedback Operational Amplifier |
BKC
| Part | Description |
| 1N6030B | 180V, 500mWt General purpose voltage reference/regulator diode |
| 1N6031B | 200V, 500mWt General purpose voltage reference/regulator diode |
| LL6030B | 180V, 500mWt General purpose voltage reference/regulator diode |
| LL6031B | 200V, 500mWt General purpose voltage reference/regulator diode |
BSI
BYTES
| Part | Description |
| FR1603 | Fast recovery rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. |
| FR603 | Fast recovery rectifier. Maximum recurrent peak reverse voltage 200V. Maximum average forward rectified current 6A. |
| HER1603 | 16.0 AMP HIGH EFFICIENCY RECTIFIERS |
| HER1603A | High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. |
| HER1603C | High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. |
| HER603 | High efficiency rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 6.0 A. |
| RS603 | Single phase bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 6.0 A. |
| RS603M | Single phase bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 6.0 A. |
CALLM
| Part | Description |
| 2SC4603R | Bipolar transistor |
CANDD
| Part | Description |
| 76603/3 | Pulse transformer. Turns ratio (+-2%) 2:1. |
| 766033 | Pulse Transformers |
Continental Device India Ltd
| Part | Description |
| 2N6034 | W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
| 2N6036 | 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
| 2N6037 | 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
| 2N6038 | 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
| 2N6039 | W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
CENTR
| Part | Description |
| 1N6030B | 180V, 500mWt General purpose voltage reference/regulator diode |
| 1N6030C | 180V, 500mWt General purpose voltage reference/regulator diode |
| 1N6030D | 180V, 500mWt General purpose voltage reference/regulator diode |
| 1N6031B | 200V, 500mWt General purpose voltage reference/regulator diode |
| 1N6031C | 200V, 500mWt General purpose voltage reference/regulator diode |
| 1N6031D | 200V, 500mWt General purpose voltage reference/regulator diode |
| 2N6030 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6034 | Leaded Power Transistor Darlington |
| 2N6035 | Leaded Power Transistor Darlington |
| 2N6036 | Leaded Power Transistor Darlington |
| 2N6037 | Leaded Power Transistor Darlington |
| 2N6038 | Leaded Power Transistor Darlington |
| 2N6039 | Leaded Power Transistor Darlington |
| CT0603CS | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-10N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-11N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-12N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-15N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-16N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-18N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-1N6_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-1N8_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-22N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-23N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-24N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-27N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-30N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-33N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-36N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-39N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-3N6_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-3N9_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-43N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-47N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-4N3_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-4N7_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-56N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-5N1_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-5N6_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-68N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-6N3_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-6N8_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-72N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-7N5_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-82N_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-8N2_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-8N7_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-9N5_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R10_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R11_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R12_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R15_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R18_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R22_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R27_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R33_ | SMD ceramic core wire-wound high current chip inductor |
| CT0603CS_-R39_ | SMD ceramic core wire-wound high current chip inductor |
| PMD1603K | Power Transistors |
Chino-Excel Technology Corp.
| Part | Description |
| CEB603 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| CEB6030AL | N-channel logic level enhancement mode field effect transistor |
| CEB6030L | N-channel logic level enhancement mode field effect transistor |
| CEB6030LS2 | N-channel logic level enhancement mode field effect transistor |
| CEB6031L | N-channel logic level enhancement mode field effect transistor |
| CEB6031LS2 | N-channel logic level enhancement mode field effect transistor |
| CEB603AL | N-channel logic level enhancement mode field effect transistor |
| CEB603ALS2 | N-channel logic level enhancement mode field effect transistor |
| CEP6030AL | N-channel logic level enhancement mode field effect transistor |
| CEP6030L | N-channel logic level enhancement mode field effect transistor |
| CEP6030LS2 | N-channel logic level enhancement mode field effect transistor |
| CEP6031L | N-channel logic level enhancement mode field effect transistor |
| CEP6031LS2 | N-channel logic level enhancement mode field effect transistor |
| CEP603AL | N-channel logic level enhancement mode field effect transistor |
| CEP603ALS2 | N-channel logic level enhancement mode field effect transistor |
CLREX
| Part | Description |
| CL603 | 300 V, hermetically sealed 1/4" diameter glass case |
| CL603A | 300 V, hermetically sealed 1/4" diameter glass case |
| CL603AL | 170 V, hermetically sealed 1/4" diameter glass case |
Cypress Semiconductor
| Part | Description |
| CY7C64603-128NC | V(cc): -0.5 to +4.0V; V(in /out): -0.5 to +0.5V; 500mW; EZ-USB FX USB microcontroller |
| CY7C64603-52NC | V(cc): -0.5 to +4.0V; V(in /out): -0.5 to +0.5V; 500mW; EZ-USB FX USB microcontroller |
| CY7C64603-80NC | V(cc): -0.5 to +4.0V; V(in /out): -0.5 to +0.5V; 500mW; EZ-USB FX USB microcontroller |
Daewoo Semiconductor
| Part | Description |
| DMD5603 | 10ch selector for cordless phone |
| DMD5603-V | 10ch selector for cordless phone |
Dallas Semiconductor
| Part | Description |
| DS1603 | Elapsed Time Counter Module |
DATV
| Part | Description |
| DG16032 | GRAPHIC LCD MODULE display format: 160x32 ; module size: 116.5x44.5x14.0; viewing size: 99.0x24.0; dot size: 0.55x0.55; controller: SED1521DAA; |
DCCOM
| Part | Description |
| FR603 | 6.0 mA fast recovery rectifier |
| FR603G | 6.0 mA fast recovery glass passivated rectifier |
| HER1603 | 16 mA high efficiency rectifier |
| RS603 | 6.0 mA single-phase silicon bridge rectifier |
DESC
| Part | Description |
| 1N5603+JAN | 3.5A Iout, 5.0kV Vrrm General Purpose Silicon Rectifier |
DIODS
| Part | Description |
| FR603 | 200V; 6.0A fast recovery rectifier |
| FR603G | 6.0A Iout, 200V Vrrm Fast Recovery Rectifier |
| HER1603 | 16.0A Iout, 200V Vrrm General Purpose Silicon Rectifier |
| HER603 | 200V; 6.0A high efficiency rectifier |
| MBR6030 | 60A SCHOTTKY BARRIER RECTIFIER |
| MBR6030PT | 30V; 60A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| MBR6035PT | 35V; 60A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| NFC603 | 60A Iout, 150V Vrrm Fast Recovery Rectifier |
| PBPC603 | 200V; 6.0A bridge rectifier |
| PBU603 | 200V; 6.0A bridge rectifier |
| RS603 | 200V; 6.0A bridge rectifier |
| SBL6030 | 60A SCHOTTKY BARRIER RECTIFIER |
| SBL6030PT | 30V; 60A schottky barrier rectifier |
DIOUS
| Part | Description |
| SPR1603C | 16A Iout, 300V Vrrm Fast Recovery Rectifier |
| SPR603C | 6.0A Iout, 300V Vrrm Fast Recovery Rectifier |
| UFR603 | 6.0A Iout, 300V Vrrm Fast Recovery Rectifier |
EASTR
| Part | Description |
| MC603 | 60V Vrrm, 3.3pF Capacitance Varactor Diode |
| MMC603 | 60V Vrrm, 3.3pF Capacitance Varactor Diode |
ECG
| Part | Description |
| ECG6034 | 60A Iout, 400V Vrrm General Purpose Silicon Rectifier |
| ECG6035 | 60A Iout, 400V Vrrm General Purpose Silicon Rectifier |
EIC
| Part | Description |
| FR603 | Fast Recovery Rectifier Diodes |
| HER603 | High Efficient Rectifier Diodes |
| STB6030 | Transient Voltage Suppressor Diodes |
| STB6033 | Transient Voltage Suppressor Diodes |
| STB6036 | Transient Voltage Suppressor Diodes |
| STB6039 | Transient Voltage Suppressor Diodes |
| STU6030 | Working peak reverse voltage: 24.3 V, 1 mA, 600 W surface mount transient voltage suppressor |
| STU6033 | Working peak reverse voltage: 26.8 V, 1 mA, 600 W surface mount transient voltage suppressor |
| STU6036 | Working peak reverse voltage: 29.1 V, 1 mA, 600 W surface mount transient voltage suppressor |
| STU6039 | Working peak reverse voltage: 31.6 V, 1 mA, 600 W surface mount transient voltage suppressor |
| SZ6030 | Zener Diodes |
| SZ6033 | Zener Diodes |
| SZ6036 | Zener Diodes |
| SZ6039 | Zener Diodes |
| SZ603D | Zener Diodes |
| SZ603G | Zener Diodes |
| SZ603J | Zener Diodes |
Fairchild Semiconductor
| Part | Description |
| FDB6030 | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030BL | N-Channel Logic Level PowerTrench® MOSFET |
| FDB6030BL_NL | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB6035AL | N-Channel Logic Level PowerTrench® MOSFET |
| FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC6036P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC6036P_F077 | P-Channel 1.8V Specified PowerTrench MOSFET Recommend FDC6036P_F077 |
| FDD6030BL | N-Channel PowerTrench® MOSFET [Advanced] |
| FDD6030BL_NL | 30V N-Channel PowerTrench MOSFET |
| FDD6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor [Preliminary] |
| FDD6035 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6035AL | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6035AL_NL | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP6030 | N-Channel Logic Level PowerTrench MOSFET |
| FDP6030BL | N-Channel Logic Level PowerTrench® MOSFET |
| FDP6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP6035AL | N-Channel Logic Level PowerTrench® MOSFET |
| FDP6035AL_NL | N-Channel Logic Level PowerTrench MOSFET |
| FDP6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor [Life-time buy] |
| FDU6030BL | 30V N-Channel PowerTrench MOSFET |
| KSC5603D | NPN Silicon Transistor Planar Silicon Transistor |
| KSC5603DTU | NPN Silicon Transistor Planar Silicon Transistor |
| NDB6030 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB6030L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V |
| NDB6030PL | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB6030PL_NL | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB603AL | N-channel logic level enhancement mode field effect transistor, 30V, 25A |
| NDP6030 | N-Channel Logic Level Enhancement Mode Field Effect Transistor [Life-time buy] |
| NDP6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP6030PL | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| QTLP603C-EB | Blue surface mount LED lamp, 0.35 mm height. |
Fujitsu Microelectronics
| Part | Description |
| MB603xxx | UHB SERIES 1.5U CMOS GATE ARRAYS |
| MB89603 | 8-bit Proprietary Microcontroller |
| MB89603PFV | 8-bit proprietary microcontroller |
FORMO
| Part | Description |
| FR1603 | 200 V, 16 A fast recovery rectifier |
| FR603 | 200 V, 6 A fast recovery rectifier |
| HER1603 | 200 V, 16 A high efficiency rectifier |
| HER603 | 200 V, 6 A high efficiency rectifier |
| RS603 | 200 V, 6 A single phase bridge rectifier |
FRED
| Part | Description |
| FR603 | 6.0A Iout, 200V Vrrm Fast Recovery Rectifier |
| FR603G | 6.0A Iout, 200V Vrrm Fast Recovery Rectifier |
| HER603 | 6.0A Iout, 200V Vrrm General Purpose Silicon Rectifier |
Fuji Electric Co.
| Part | Description |
| 2SC4603 | V(cbo): 900V; V(ceo): 800V; I(c): 3A; 80W; high voltage high speed switching bipolar transistor |
| 2SC4603R | Ratigns and Caracteristics of Fuji Power Transistor |
| AKBPC603 | 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
GDIOD
| Part | Description |
| 1N603 | 300mA Iout, 300V Vrrm General Purpose Silicon Rectifier |
| 1N603A | 300mA Iout, 300V Vrrm General Purpose Silicon Rectifier |
GENES
| Part | Description |
| GL603USB | 3.6 V, USB+PS/2 mouse microcontroller |
| GL603USB-A | 3.6 V, USB+PS/2 mouse microcontroller |
| GL603USB-B | 3.6 V, USB+PS/2 mouse microcontroller |
GESS
| Part | Description |
| 2N6032 | High-current, high-power, high-speed silicon N-P-N transistor. |
| 2N6033 | High-current, high-power, high-speed silicon N-P-N transistor. |
GODAR
| Part | Description |
| FR603 | 200 V, 6 A, Fast recovery rectifier |
| FR603G | 200 V, 6 A, Glass passivated junction fast switching rectifier |
| HER603 | 200 V, 6 A, High efficiency rectifier |
| RS603 | 200 V, Single-phase silicon bridge |
GPSEM
GSITE
GTL
| Part | Description |
| E603 | Super flux orange LED. Lens clear. Luminous intensity at 20mA 300mcd (min.), 600mcd (typ.). Forward voltage at 20mA 2.0V (typ.), 2.5V (max.). |
Harris Semiconductor
| Part | Description |
| HM-7603-5 | 32 X 8 PROM(Open Collector Outputs, Three State Outpus) |
Hitachi Semiconductor
| Part | Description |
| 2SD1603 | LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
| HD61603 | SEGMENT TYPE LCD DRIVER |
| HD61603R | V(cc): -0.3 to +7.0V; 500mW; segment type LCD driver |
Holtek Semiconductor Inc.
| Part | Description |
| HT6030 | 3 in 12 decoder. 12-addresses, 0-data |
| HT6030 | 3 in 12 decoder. 12-addresses, 0-data |
| HT6032 | 3 in 12 decoder. 10-addresses, 2-data |
| HT6032 | 3 in 12 decoder. 10-addresses, 2-data |
| HT6034 | 3 in 12 decoder. 8-addresses, 4-data |
| HT6034 | 3 in 12 decoder. 8-addresses, 4-data |
HP
HSMC
| Part | Description |
| H603AL | N-channel logic level enchancement mode field effect transistor for low voltage applications |
| HU603AL | 30V 100A N-channel logic level enchancement mode field effect transistor for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed |
Isahaya Electronics Corporation
| Part | Description |
| 2SA1603 | 150mW SMD PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 820 hFE. Complementary 2SC4155 |
| 2SA1603A | 150mW SMD PNP transistor, maximum rating: -50V Vceo, -150mA Ic, 120 to 560 hFE. Improve on 2SA1603 |
Integrated Device Technology
| Part | Description |
| IDT71V65603 | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs |
| IDT71V65603S100BG | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S100BGI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S100BQ | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S100BQI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S100PF | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S100PFI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 100MHz |
| IDT71V65603S133BG | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S133BGI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S133BQ | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S133BQI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S133PF | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S133PFI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 133MHz |
| IDT71V65603S150BG | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V65603S150BGI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V65603S150BQ | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V65603S150BQI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V65603S150PF | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V65603S150PFI | 256Kx36, 3.3V synchronous SRAMs, burst counter pipelined outputs, 150MHz |
| IDT71V67603 | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133BGG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133BGGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133BQG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133BQGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133PFG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S133PFGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150BGG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150BGGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150BQG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150BQGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150PFG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S150PFGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166BGG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166BGGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166BQG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166BQGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166PFG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
| IDT71V67603S166PFGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect |
Infineon Technologies AG
| Part | Description |
| BSP603S2L | OptiMOS Power-Transistor |
| TUA6030 | 3-Band TV Tuner IC |
| TUA6032 | 3-Band TV Tuner IC |
| TUA6034 | 3-Band Digital TV / Set-Top-Box Tuner IC |
| TUA6034-T | 3-Band Digital TV / Set-Top-Box Tuner IC |
| TUA6034-V | 3-Band Digital TV / Set-Top-Box Tuner IC |
| TUA6036 | 3-Band Digital TV / Set-Top-Box Tuner IC |
| TUA6036-T | 3-Band Digital TV / Set-Top-Box Tuner IC |
Intersil Corp.
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