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        Semiconductor parts containing 589 
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NEC Electronics Inc. 
| Part | Description |  
| NX8560SJ589-CC | EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8562LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode ground. FC-PC connector. |  
| NX8562LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode floating. FC-PC connector. |  
| NX8563LA589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |  
| NX8563LA589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |  
| NX8563LAS589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |  
| NX8563LAS589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |  
| NX8563LB589 | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |  
| NX8563LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode ground. |  
| NX8563LB589-CA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |  
| NX8563LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode floating. |  
| NX8564LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8564LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8565LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8565LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8566LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8566LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8567SA589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8567SA589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8567SAM589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8567SAM589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8567SAS589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  
| NX8567SAS589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  
| NX8570SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |  
| NX8570SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |  
| NX8571SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |  
| NX8571SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |  
| OD-S589A | SMT-InGaAs PIN-Amp Module |  
| OD-S589B |  SMT-InGaAs PIN-Amp Module |  
  
NEWEN 
| Part | Description |  
| 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  
  
National Semiconductor 
 
NTE 
| Part | Description |  
| NTE1589 | Integrated circuit. Color TV luminance chroma system. |  
| NTE5589 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1200V. RMS on-state current It(rms) = 550A. |  
| NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |  
| NTE5891 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |  
| NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |  
| NTE5893 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |  
| NTE5894 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |  
| NTE589 | Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. |  
| NTE5895 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |  
| NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |  
| NTE5897 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |  
| NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |  
| NTE5899 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |  
  
Oki Semiconductor 
 
ON Semiconductor 
| Part | Description |  
| MC74HC589 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |  
| MC74HC589A_05 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output High−Performance Silicon−Gate CMOS |  
| MC74HC589A | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |  
| MC74HC589AD | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589ADG | 8/Bit Shift Register |  
| MC74HC589ADR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589ADR2G | 8/Bit Shift Register |  
| MC74HC589ADT | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589ADTR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589ADTR2G | 8/Bit Shift Register |  
| MC74HC589AF | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589AFEL | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589AFELG | 8/Bit Shift Register |  
| MC74HC589AFL1 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589AN | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  
| MC74HC589ANG | 8/Bit Shift Register |  
| MMBT589LT1_07 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |  
| MMBT589LT1 | High Current Surface Mount PNP Silicon Switching Transistor |  
| MMBT589LT1G | Small Signal Switching Transistor-PNP |  
| MMBT589LT3 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |  
| MMBT589LT3G | Small Signal Switching Transistor-PNP |  
| MMBT6589T1 |  High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications |  
| MMBT6589T1G | High Current Surface Mount PNP Switching Transistor for Load Management in Portable Applications |  
| NCP1589AMNTWG | Low Voltage Synchronous Buck Controller |  
| NCP1589AMNTXG |  Low Voltage Synchronous Buck Controller |  
| NCP1589B | Low Voltage Synchronous Buck Controller |  
| NCP1589BMNTWG |  Low Voltage Synchronous Buck Controller |  
| NCP1589BMNTXG |  Low Voltage Synchronous Buck Controller |  
| NCP5890 |  Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |  
| NCP5890MUTXG |  Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |  
  
OPTEK 
| Part | Description |  
| 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  
  
Panasonic (Matsushita) 
| Part | Description |  
| 2SB1589 | Silicon PNP epitaxial planar type small signal transistor |  
| 2SC5895 | NPN power transistor for DC-DC converters, 2A, 60V |  
| 2SC5896 | Silicon NPN epitaxial planar type |  
| MN101C589 | 8-bit Microcontroller |  
  
PERIC 
 
Philips Semiconductors 
 
PIRGO 
| Part | Description |  
| 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  
  
Plessey Semiconductors 
 
PWRX 
| Part | Description |  
| 1N4589 | 300V, 150A general purpose single diode |  
| 1N4589R | 300V, 150A general purpose single diode |  
| IN4589 | General Purpose Rectifier |  
| IN4589R | General Purpose Rectifier |  
| R-IN4589 | General Purpose Rectifier |  
  
RENES 
 
RHMBS 
| Part | Description |  
| L-589 | Self-Leaded Thru Hole Common Mode Choke |  
  
Semelab Plc. 
| Part | Description |  
| 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  
  
SAMES 
| Part | Description |  
| SA589 | LD/DTMF switchable dialler with dedicated keys for 20 repertory memories |  
  
SANYO Electric Co., Ltd. 
| Part | Description |  
| 2SA1589 | Miscellaneous Transistors |  
| 2SC3589 | 250V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |  
| 2SC5899 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |  
| 2SJ589 | DC / DC Converter Applications |  
| 2SJ589LS | P-Channel Silicon MOSFET DC / DC Converter Applications |  
| LA4589 | 1.5V Stereo Headphone Preamplifier and Power Amplifier |  
| LA4589W | 1,5V stereo headphone preamplifier and power amplifier |  
| LC75893M | 1/3 Duty LCD Display Driver with Key Input Function |  
  
SILTR 
| Part | Description |  
| 2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |  
  
SINC 
| Part | Description |  
| 1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |  
  
Semicon Components Inc. 
| Part | Description |  
| 1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  
| 1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  
  
Siemens 
| Part | Description |  
| Q62702-B589 | Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) |  
| Q62702-F589 | NPN SILICON RF TRANSISTOR |  
  
Samsung Electronic 
 
Sanken Electric Co. 
| Part | Description |  
| 2SD2589 | Transistor For Power Amplifier |  
  
SONIX 
| Part | Description |  
| SNC589 | 3 V, two channel direct drive speech controller |  
  
SONY Semiconductors 
| Part | Description |  
| CXD2589Q | CD Digital Signal Processor |  
| CXP85890A | CMOS 8-bit Single Chip Microcomputer |  
  
SPRAQ 
 
SSDI 
| Part | Description |  
| SZ5890 |  5.0 WATT 6.8 - 270 VOLTS ZENER DIODES |  
  
STANF 
| Part | Description |  
| NGA-589 | DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |  
| SGA-5589 | DC-4000 MHz, silicon germanium  HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |  
| SGA-6589 | DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |  
| SHF-0589 | DC-3 GHz, 2.0 watt GaAs HFET |  
| SHF-0589 | DC-8 GHz, 2 watt AIGaAs/GaAs HFET |  
  
STI 
| Part | Description |  
| 2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |  
  
SGS-Thomson Microelectronics 
| Part | Description |  
| ST72589BW | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  
| ST72589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  
| ST72P589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  
| ST72T589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  
  
Semitronics Corp. 
| Part | Description |  
| 1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  
| 1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  
| 1N1589R | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  
| 1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |  
  
THOMS 
| Part | Description |  
| SK3589A | 70A Iout, 600V Vrrm Fast Recovery Rectifier |  
| SK5589 | Triac |  
| SK589 | 60V, 50Wt General purpose voltage reference/regulator diode |  
  
Texas Instruments 
 
Toshiba 
| Part | Description |  
| 2SC5589 | Silicon NPN triple diffused MESA type transistor for display, color TV, high speed switching applications, horizontal deflection output for high super resolution |  
| TC5589J15 | General Purpose Static RAM |  
| TC5589J20 | General Purpose Static RAM |  
| TC5589J25 | General Purpose Static RAM |  
| TC5589J35 | General Purpose Static RAM |  
| TC5589P15 | General Purpose Static RAM |  
| TC5589P20 | General Purpose Static RAM |  
| TC5589P25 | General Purpose Static RAM |  
| TC5589P35 | General Purpose Static RAM |  
  
TriQuint Semiconductor 
| Part | Description |  
| 855896 |  810 MHz SAW Filter |  
| 855898 | 374 MHz SAW Filter |  
  
TRNSR 
| Part | Description |  
| 2N5890 | Transistors, Bipolar, Ge PNP Power |  
| 2N5893 | Transistors, Bipolar, Ge PNP Power |  
| 2N5894 | Transistors, Bipolar, Ge PNP Power |  
| 2N5895 | Transistors, Bipolar, Ge PNP Power |  
| 2N5896 | Transistors, Bipolar, Ge PNP Power |  
| 2N5897 | Transistors, Bipolar, Ge PNP Power |  
| 2N5898 | Transistors, Bipolar, Ge PNP Power |  
| 2N5899 | Transistors, Bipolar, Ge PNP Power |  
| 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  
  
UTMC 
| Part | Description |  
| 5962-9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |  
| 5962-9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |  
| 5962-9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |  
| 5962-9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |  
| 5962-9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |  
| 5962-9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |  
| 5962-9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |  
| 5962-9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |  
| 5962-9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |  
| 5962-9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |  
| 5962-9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |  
| 5962-9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |  
| 5962H9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |  
| 5962H9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |  
| 5962H9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |  
| 5962H9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |  
| 5962H9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |  
| 5962H9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |  
| 5962H9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |  
| 5962H9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |  
| 5962H9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |  
| 5962H9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |  
| 5962H9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |  
| 5962H9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |  
| 5962R9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |  
| 5962R9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |  
| 5962R9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |  
| 5962R9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |  
| 5962R9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |  
| 5962R9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |  
| 5962R9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |  
| 5962R9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |  
| 5962R9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |  
| 5962R9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |  
| 5962R9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |  
| 5962R9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |  
  
VISAY 
| Part | Description |  
| MAL202190589E3 | Aluminum Capacitors Axial Standard Miniature |  
  
Zetex Semiconductors 
| Part | Description |  
| FCX589 | PNP silicon  planar medium power high performance transistor |  
| FMMT589 | PNP silicon planar medium power high performance transistor |  
| FZT589 | PNP silicon planar medium power high performance transistor |  
 
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