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 NEC Electronics Inc.
  |     Semiconductor parts containing 589 
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| Part | Description |  | NX8560SJ589-CC | EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8562LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode ground. FC-PC connector. |  | NX8562LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode floating. FC-PC connector. |  | NX8563LA589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |  | NX8563LA589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |  | NX8563LAS589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |  | NX8563LAS589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |  | NX8563LB589 | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |  | NX8563LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode ground. |  | NX8563LB589-CA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |  | NX8563LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode floating. |  | NX8564LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8564LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8565LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8565LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8566LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8566LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8567SA589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8567SA589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8567SAM589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8567SAM589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8567SAS589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |  | NX8567SAS589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |  | NX8570SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |  | NX8570SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |  | NX8571SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |  | NX8571SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |  | OD-S589A | SMT-InGaAs PIN-Amp Module |  | OD-S589B | SMT-InGaAs PIN-Amp Module |  NEWEN
 
 
| Part | Description |  | 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  National Semiconductor
 
 NTE
 
 
| Part | Description |  | NTE1589 | Integrated circuit. Color TV luminance chroma system. |  | NTE5589 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1200V. RMS on-state current It(rms) = 550A. |  | NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |  | NTE5891 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |  | NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |  | NTE5893 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |  | NTE5894 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |  | NTE589 | Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. |  | NTE5895 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |  | NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |  | NTE5897 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |  | NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |  | NTE5899 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |  Oki Semiconductor
 
 ON Semiconductor
 
 
| Part | Description |  | MC74HC589 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |  | MC74HC589A_05 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output High−Performance Silicon−Gate CMOS |  | MC74HC589A | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |  | MC74HC589AD | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589ADG | 8/Bit Shift Register |  | MC74HC589ADR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589ADR2G | 8/Bit Shift Register |  | MC74HC589ADT | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589ADTR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589ADTR2G | 8/Bit Shift Register |  | MC74HC589AF | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589AFEL | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589AFELG | 8/Bit Shift Register |  | MC74HC589AFL1 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589AN | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |  | MC74HC589ANG | 8/Bit Shift Register |  | MMBT589LT1_07 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |  | MMBT589LT1 | High Current Surface Mount PNP Silicon Switching Transistor |  | MMBT589LT1G | Small Signal Switching Transistor-PNP |  | MMBT589LT3 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |  | MMBT589LT3G | Small Signal Switching Transistor-PNP |  | MMBT6589T1 | High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications |  | MMBT6589T1G | High Current Surface Mount PNP Switching Transistor for Load Management in Portable Applications |  | NCP1589AMNTWG | Low Voltage Synchronous Buck Controller |  | NCP1589AMNTXG | Low Voltage Synchronous Buck Controller |  | NCP1589B | Low Voltage Synchronous Buck Controller |  | NCP1589BMNTWG | Low Voltage Synchronous Buck Controller |  | NCP1589BMNTXG | Low Voltage Synchronous Buck Controller |  | NCP5890 | Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |  | NCP5890MUTXG | Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |  OPTEK
 
 
| Part | Description |  | 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  Panasonic (Matsushita)
 
 
| Part | Description |  | 2SB1589 | Silicon PNP epitaxial planar type small signal transistor |  | 2SC5895 | NPN power transistor for DC-DC converters, 2A, 60V |  | 2SC5896 | Silicon NPN epitaxial planar type |  | MN101C589 | 8-bit Microcontroller |  PERIC
 
 Philips Semiconductors
 
 PIRGO
 
 
| Part | Description |  | 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  Plessey Semiconductors
 
 PWRX
 
 
| Part | Description |  | 1N4589 | 300V, 150A general purpose single diode |  | 1N4589R | 300V, 150A general purpose single diode |  | IN4589 | General Purpose Rectifier |  | IN4589R | General Purpose Rectifier |  | R-IN4589 | General Purpose Rectifier |  RENES
 
 RHMBS
 
 
| Part | Description |  | L-589 | Self-Leaded Thru Hole Common Mode Choke |  Semelab Plc.
 
 
| Part | Description |  | 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  SAMES
 
 
| Part | Description |  | SA589 | LD/DTMF switchable dialler with dedicated keys for 20 repertory memories |  SANYO Electric Co., Ltd.
 
 
| Part | Description |  | 2SA1589 | Miscellaneous Transistors |  | 2SC3589 | 250V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |  | 2SC5899 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |  | 2SJ589 | DC / DC Converter Applications |  | 2SJ589LS | P-Channel Silicon MOSFET DC / DC Converter Applications |  | LA4589 | 1.5V Stereo Headphone Preamplifier and Power Amplifier |  | LA4589W | 1,5V stereo headphone preamplifier and power amplifier |  | LC75893M | 1/3 Duty LCD Display Driver with Key Input Function |  SILTR
 
 
| Part | Description |  | 2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |  SINC
 
 
| Part | Description |  | 1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |  Semicon Components Inc.
 
 
| Part | Description |  | 1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  | 1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  Siemens
 
 
| Part | Description |  | Q62702-B589 | Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) |  | Q62702-F589 | NPN SILICON RF TRANSISTOR |  Samsung Electronic
 
 Sanken Electric Co.
 
 
| Part | Description |  | 2SD2589 | Transistor For Power Amplifier |  SONIX
 
 
| Part | Description |  | SNC589 | 3 V, two channel direct drive speech controller |  SONY Semiconductors
 
 
| Part | Description |  | CXD2589Q | CD Digital Signal Processor |  | CXP85890A | CMOS 8-bit Single Chip Microcomputer |  SPRAQ
 
 SSDI
 
 
| Part | Description |  | SZ5890 | 5.0 WATT 6.8 - 270 VOLTS ZENER DIODES |  STANF
 
 
| Part | Description |  | NGA-589 | DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |  | SGA-5589 | DC-4000 MHz, silicon germanium  HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |  | SGA-6589 | DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |  | SHF-0589 | DC-3 GHz, 2.0 watt GaAs HFET |  | SHF-0589 | DC-8 GHz, 2 watt AIGaAs/GaAs HFET |  STI
 
 
| Part | Description |  | 2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |  SGS-Thomson Microelectronics
 
 
| Part | Description |  | ST72589BW | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  | ST72589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  | ST72P589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  | ST72T589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |  Semitronics Corp.
 
 
| Part | Description |  | 1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  | 1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  | 1N1589R | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |  | 1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |  THOMS
 
 
| Part | Description |  | SK3589A | 70A Iout, 600V Vrrm Fast Recovery Rectifier |  | SK5589 | Triac |  | SK589 | 60V, 50Wt General purpose voltage reference/regulator diode |  Texas Instruments
 
 Toshiba
 
 
| Part | Description |  | 2SC5589 | Silicon NPN triple diffused MESA type transistor for display, color TV, high speed switching applications, horizontal deflection output for high super resolution |  | TC5589J15 | General Purpose Static RAM |  | TC5589J20 | General Purpose Static RAM |  | TC5589J25 | General Purpose Static RAM |  | TC5589J35 | General Purpose Static RAM |  | TC5589P15 | General Purpose Static RAM |  | TC5589P20 | General Purpose Static RAM |  | TC5589P25 | General Purpose Static RAM |  | TC5589P35 | General Purpose Static RAM |  TriQuint Semiconductor
 
 
| Part | Description |  | 855896 | 810 MHz SAW Filter |  | 855898 | 374 MHz SAW Filter |  TRNSR
 
 
| Part | Description |  | 2N5890 | Transistors, Bipolar, Ge PNP Power |  | 2N5893 | Transistors, Bipolar, Ge PNP Power |  | 2N5894 | Transistors, Bipolar, Ge PNP Power |  | 2N5895 | Transistors, Bipolar, Ge PNP Power |  | 2N5896 | Transistors, Bipolar, Ge PNP Power |  | 2N5897 | Transistors, Bipolar, Ge PNP Power |  | 2N5898 | Transistors, Bipolar, Ge PNP Power |  | 2N5899 | Transistors, Bipolar, Ge PNP Power |  | 2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |  UTMC
 
 
| Part | Description |  | 5962-9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |  | 5962-9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |  | 5962-9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |  | 5962-9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |  | 5962-9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |  | 5962-9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |  | 5962-9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |  | 5962-9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |  | 5962-9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |  | 5962-9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |  | 5962-9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |  | 5962-9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |  | 5962H9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |  | 5962H9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |  | 5962H9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |  | 5962H9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |  | 5962H9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |  | 5962H9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |  | 5962H9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |  | 5962H9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |  | 5962H9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |  | 5962H9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |  | 5962H9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |  | 5962H9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |  | 5962R9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |  | 5962R9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |  | 5962R9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |  | 5962R9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |  | 5962R9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |  | 5962R9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |  | 5962R9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |  | 5962R9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |  | 5962R9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |  | 5962R9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |  | 5962R9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |  | 5962R9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |  VISAY
 
 
| Part | Description |  | MAL202190589E3 | Aluminum Capacitors Axial Standard Miniature |  Zetex Semiconductors
 
 
| Part | Description |  | FCX589 | PNP silicon  planar medium power high performance transistor |  | FMMT589 | PNP silicon planar medium power high performance transistor |  | FZT589 | PNP silicon planar medium power high performance transistor |  |  |  |