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Semiconductor parts containing 589
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NEC Electronics Inc.
Part | Description |
NX8560SJ589-CC | EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8562LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode ground. FC-PC connector. |
NX8562LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode floating. FC-PC connector. |
NX8563LA589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |
NX8563LA589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |
NX8563LAS589-CC | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |
NX8563LAS589-CD | Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |
NX8563LB589 | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NX8563LB589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode ground. |
NX8563LB589-CA | CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NX8563LF589-BA | CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-PC connector. Anode floating. |
NX8564LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8564LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8565LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8565LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8566LE589-BC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8566LE589-CC | EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8567SA589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8567SA589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8567SAM589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8567SAM589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8567SAS589-BC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |
NX8567SAS589-CC | EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NX8570SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |
NX8570SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |
NX8571SC589-BA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-PC connector. |
NX8571SC589-CA | CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-PC connector. |
OD-S589A | SMT-InGaAs PIN-Amp Module |
OD-S589B | SMT-InGaAs PIN-Amp Module |
NEWEN
Part | Description |
2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
National Semiconductor
NTE
Part | Description |
NTE1589 | Integrated circuit. Color TV luminance chroma system. |
NTE5589 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1200V. RMS on-state current It(rms) = 550A. |
NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |
NTE5891 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |
NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |
NTE5893 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. |
NTE5894 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |
NTE589 | Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. |
NTE5895 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. |
NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |
NTE5897 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. |
NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |
NTE5899 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. |
Oki Semiconductor
ON Semiconductor
Part | Description |
MC74HC589 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |
MC74HC589A_05 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output High−Performance Silicon−Gate CMOS |
MC74HC589A | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output |
MC74HC589AD | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589ADG | 8/Bit Shift Register |
MC74HC589ADR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589ADR2G | 8/Bit Shift Register |
MC74HC589ADT | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589ADTR2 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589ADTR2G | 8/Bit Shift Register |
MC74HC589AF | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589AFEL | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589AFELG | 8/Bit Shift Register |
MC74HC589AFL1 | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589AN | 8-Bit Serial or Parallel-Input/Serial-Output Shift Register With 3-State Outputs |
MC74HC589ANG | 8/Bit Shift Register |
MMBT589LT1_07 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
MMBT589LT1 | High Current Surface Mount PNP Silicon Switching Transistor |
MMBT589LT1G | Small Signal Switching Transistor-PNP |
MMBT589LT3 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
MMBT589LT3G | Small Signal Switching Transistor-PNP |
MMBT6589T1 | High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications |
MMBT6589T1G | High Current Surface Mount PNP Switching Transistor for Load Management in Portable Applications |
NCP1589AMNTWG | Low Voltage Synchronous Buck Controller |
NCP1589AMNTXG | Low Voltage Synchronous Buck Controller |
NCP1589B | Low Voltage Synchronous Buck Controller |
NCP1589BMNTWG | Low Voltage Synchronous Buck Controller |
NCP1589BMNTXG | Low Voltage Synchronous Buck Controller |
NCP5890 | Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |
NCP5890MUTXG | Light Management IC Dedicated for LCD Backlighting and Multi-LED Fun Light Applications |
OPTEK
Part | Description |
2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
Panasonic (Matsushita)
Part | Description |
2SB1589 | Silicon PNP epitaxial planar type small signal transistor |
2SC5895 | NPN power transistor for DC-DC converters, 2A, 60V |
2SC5896 | Silicon NPN epitaxial planar type |
MN101C589 | 8-bit Microcontroller |
PERIC
Philips Semiconductors
PIRGO
Part | Description |
2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
Plessey Semiconductors
PWRX
Part | Description |
1N4589 | 300V, 150A general purpose single diode |
1N4589R | 300V, 150A general purpose single diode |
IN4589 | General Purpose Rectifier |
IN4589R | General Purpose Rectifier |
R-IN4589 | General Purpose Rectifier |
RENES
RHMBS
Part | Description |
L-589 | Self-Leaded Thru Hole Common Mode Choke |
Semelab Plc.
Part | Description |
2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
SAMES
Part | Description |
SA589 | LD/DTMF switchable dialler with dedicated keys for 20 repertory memories |
SANYO Electric Co., Ltd.
Part | Description |
2SA1589 | Miscellaneous Transistors |
2SC3589 | 250V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor |
2SC5899 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
2SJ589 | DC / DC Converter Applications |
2SJ589LS | P-Channel Silicon MOSFET DC / DC Converter Applications |
LA4589 | 1.5V Stereo Headphone Preamplifier and Power Amplifier |
LA4589W | 1,5V stereo headphone preamplifier and power amplifier |
LC75893M | 1/3 Duty LCD Display Driver with Key Input Function |
SILTR
Part | Description |
2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |
SINC
Part | Description |
1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |
Semicon Components Inc.
Part | Description |
1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |
1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |
Siemens
Part | Description |
Q62702-B589 | Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) |
Q62702-F589 | NPN SILICON RF TRANSISTOR |
Samsung Electronic
Sanken Electric Co.
Part | Description |
2SD2589 | Transistor For Power Amplifier |
SONIX
Part | Description |
SNC589 | 3 V, two channel direct drive speech controller |
SONY Semiconductors
Part | Description |
CXD2589Q | CD Digital Signal Processor |
CXP85890A | CMOS 8-bit Single Chip Microcomputer |
SPRAQ
SSDI
Part | Description |
SZ5890 | 5.0 WATT 6.8 - 270 VOLTS ZENER DIODES |
STANF
Part | Description |
NGA-589 | DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |
SGA-5589 | DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
SGA-6589 | DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
SHF-0589 | DC-3 GHz, 2.0 watt GaAs HFET |
SHF-0589 | DC-8 GHz, 2 watt AIGaAs/GaAs HFET |
STI
Part | Description |
2N3589 | 200V Vcbo, 500mA Ic Low frequency power silicon NPN transistor |
SGS-Thomson Microelectronics
Part | Description |
ST72589BW | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |
ST72589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |
ST72P589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |
ST72T589BW5 | 8-BIT MCU WITH NESTED INTERRUPTS, DOT MATRIX LCD, ADC, TIMERS, PWM-BRM, SPI, SCI, I2C, CAN INTERFACES, PQFP128 |
Semitronics Corp.
Part | Description |
1N1589 | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |
1N1589A | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |
1N1589R | 4.7V, 3.5Wt General purpose voltage reference/regulator diode |
1N4589 | 150A Iout, 300V Vrrm General Purpose Silicon Rectifier |
THOMS
Part | Description |
SK3589A | 70A Iout, 600V Vrrm Fast Recovery Rectifier |
SK5589 | Triac |
SK589 | 60V, 50Wt General purpose voltage reference/regulator diode |
Texas Instruments
Toshiba
Part | Description |
2SC5589 | Silicon NPN triple diffused MESA type transistor for display, color TV, high speed switching applications, horizontal deflection output for high super resolution |
TC5589J15 | General Purpose Static RAM |
TC5589J20 | General Purpose Static RAM |
TC5589J25 | General Purpose Static RAM |
TC5589J35 | General Purpose Static RAM |
TC5589P15 | General Purpose Static RAM |
TC5589P20 | General Purpose Static RAM |
TC5589P25 | General Purpose Static RAM |
TC5589P35 | General Purpose Static RAM |
TriQuint Semiconductor
Part | Description |
855896 | 810 MHz SAW Filter |
855898 | 374 MHz SAW Filter |
TRNSR
Part | Description |
2N5890 | Transistors, Bipolar, Ge PNP Power |
2N5893 | Transistors, Bipolar, Ge PNP Power |
2N5894 | Transistors, Bipolar, Ge PNP Power |
2N5895 | Transistors, Bipolar, Ge PNP Power |
2N5896 | Transistors, Bipolar, Ge PNP Power |
2N5897 | Transistors, Bipolar, Ge PNP Power |
2N5898 | Transistors, Bipolar, Ge PNP Power |
2N5899 | Transistors, Bipolar, Ge PNP Power |
2N6589 | 500V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
UTMC
Part | Description |
5962-9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |
5962-9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |
5962-9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |
5962-9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose none. |
5962-9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose none. |
5962-9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none. |
5962-9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |
5962-9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |
5962-9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |
5962-9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose none. |
5962-9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose none. |
5962-9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose none. |
5962H9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |
5962H9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |
5962H9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |
5962H9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). |
5962H9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). |
5962H9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). |
5962H9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |
5962H9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |
5962H9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |
5962H9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). |
5962H9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). |
5962H9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). |
5962R9658901QRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |
5962R9658901QRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |
5962R9658901QRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |
5962R9658901QXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). |
5962R9658901QXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si). |
5962R9658901QXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si). |
5962R9658901VRA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
5962R9658901VRC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
5962R9658901VRX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
5962R9658901VXA | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
5962R9658901VXC | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
5962R9658901VXX | RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
VISAY
Part | Description |
MAL202190589E3 | Aluminum Capacitors Axial Standard Miniature |
Zetex Semiconductors
Part | Description |
FCX589 | PNP silicon planar medium power high performance transistor |
FMMT589 | PNP silicon planar medium power high performance transistor |
FZT589 | PNP silicon planar medium power high performance transistor |
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