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Semiconductor parts containing 516
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Fairchild Semiconductor
Fujitsu Microelectronics
Freescale Semiconductor
| Part | Description |
| MCIMX516AJM6C | i.MX51A Automotive and Infotainment Applications Processors |
| PCIMX516AJM6C | i.MX51A Automotive and Infotainment Applications Processors |
Fuji Electric Co.
GCC
| Part | Description |
| LH1516 | High voltage, photo MOS relay. |
| LH1516A | High voltage, photo MOS relay. |
GHZ
| Part | Description |
| 1516-35 | 35 W, 28 V, 1450-1550 MHz common base transistor |
GLINK
| Part | Description |
| GLT40516-10E | 32k x 16 embedded EDO DRAM |
| GLT5160L16-10TC | 100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM |
| GLT5160L16-6TC | 166 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM |
| GLT5160L16-7TC | 143 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM |
| GLT5160L16-8TC | 125 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM |
GLNAR
GODAR
| Part | Description |
| BY516 | 1800 V, 1 A, General purpose plastic rectifier |
| BZV85160 | SILICON PLANAR POWER ZENER DIODES |
| BZV8516 | SILICON PLANAR POWER ZENER DIODES |
| BZX55160 | SILICON PLANAR ZENER DIODES |
| BZX5516 | SILICON PLANAR ZENER DIODES |
| BZX85160 | SILICON PLANAR POWER ZENER DIODES |
| BZX8516 | SILICON PLANAR POWER ZENER DIODES |
| EM516 | GENERAL PURPOSE PLASTIC RECTIFIER |
GPSEM
GRNWT
| Part | Description |
| GR2516 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
GTL
| Part | Description |
| 51516OTDIM | Electronic LED Dimming Module OPTOTRONIC OTDIM |
| GTL-OS-51516 | Electronic LED Dimming Module OPTOTRONIC OTDIM |
| N516 | Neon glow lamp (standard brightness). Color off clear, color on red. Circuit voltage 90-115/220. |
| N516R1 | Neon glow lamp (standard brightness) with resistor. Color off clear, color on red. Circuit voltage 90-115. |
Harris Semiconductor
HEI
| Part | Description |
| GMS81516 | HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 16K bytes. RAM 448 bytes. |
| GMS81516 | HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 16K bytes. RAM 448 bytes. |
| GMS81516BK | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes, RAM size 448 bytes. Mask version. |
| GMS81516BLQ | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes, RAM size 448 bytes. Mask version. |
| GMS81516BQ | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes, RAM size 448 bytes. Mask version. |
| GMS81516BTK | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes OTP, RAM size 448 bytes. OTP version. |
| GMS81516BTLQ | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes OTP, RAM size 448 bytes. OTP version. |
| GMS81516BTQ | HYUNDAI micro electronic, CMOS single-chip 8-bit microcontroller with A/D converter. ROM size 16K bytes OTP, RAM size 448 bytes. OTP version. |
| HY5164S10 | General Purpose Dynamic RAM |
| HY5164S12 | General Purpose Dynamic RAM |
| HY5164S15 | General Purpose Dynamic RAM |
Hitachi Semiconductor
| Part | Description |
| 14516 | Binary Up/Down Counter |
| 1N3516 | 8.2V, 400mWt General purpose voltage reference/regulator diode |
| 2SK1516 | Power switching MOSFET |
| HD14516 | Binary Up/Down Counter |
| HD14516B | Binary Up/Down Counter |
| HM5164165F | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FLJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FLJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FLTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FLTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165J-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5164165J-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5164165LJ-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5164165LJ-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5164165LTT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5164165LTT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5164165TT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5164165TT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5164405FJ-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5164405FJ-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5164405FLJ-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5164405FLJ-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5164405FLTT-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5164405FLTT-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5164405FTT-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5164405FTT-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5164805F | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FJ | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FJ-5 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FL | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FLJ | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FLJ-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FLTT | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FLTT-5 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FLTT-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5164805FTT | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165165F | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FLJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FLJ-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FLTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FLTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FTT-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165FTT-6 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5165165J-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5165165J-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5165165LJ-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5165165LJ-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5165165LTT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5165165LTT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5165165TT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
| HM5165165TT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
| HM5165405FJ-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5165405FJ-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5165405FLJ-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5165405FLJ-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5165405FLTT-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5165405FLTT-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5165405FTT-5 | 16M x 4-bit EDO DRAM, 50ns |
| HM5165405FTT-6 | 16M x 4-bit EDO DRAM, 60ns |
| HM5165805FJ | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FJ-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FLJ-5 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FLJ-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FLTT-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FTT | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FTT-5 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HM5165805FTT-6 | 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh |
| HN25168S | Programmable Read Only Memory (PROM) |
| HN25169S | Programmable Read Only Memory (PROM) |
| HTR6516 | SFP TRANSCEIVER for Gigabit Ethernet Fibre Channel |
| HTR6516R2 | SFP TRANSCEIVER for Gigabit Ethernet Fibre Channel |
| HTR6516R | SFP TRANSCEIVER for Gigabit Ethernet Fibre Channel |
Hittite Microwave Corporation
| Part | Description |
| HMC516LC5 | SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz |
Holtek Semiconductor Inc.
| Part | Description |
| HT95168 | Caller ID telephone IC. |
| HT95168 | Caller ID telephone IC. |
HONGF
| Part | Description |
| HF9516-028L-22-1 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516-028L-22-2 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516-028L-24-2 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516-028L-32-1 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516-028L-32-2 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516-028L-34-1 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
| HF9516 | 1 CUBIC INCH 3 FORM C HERMETICALLY SEALED RELAY WITH COIL TRANSIENT SUPPRESSION |
HP
HSMC
HYNIX
| Part | Description |
| GMS81516A | USERS MANUAL |
| GMS81516B | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516B | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516B | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BK | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BLQ | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BQ | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BT | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BT | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BT | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BTK | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BTLQ | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS81516BTQ | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS82516 | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS82516 | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS82516K | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| GMS82516Q | ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
| H55S5162DFR-60M | 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O |
| H55S5162DFR-75M | 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O |
| H55S5162DFR-A3M | 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O |
| H5DU5162EFR | 512Mb DDR SDRAM |
| H5DU5162EFR-E3C | 512Mb DDR SDRAM |
| H5DU5162EFR-E3J | 512Mb DDR SDRAM |
| H5DU5162EFR-FAJ | 512Mb DDR SDRAM |
| H5DU5162EFR-J3C | 512Mb DDR SDRAM |
| H5DU5162EFR-K2C | 512Mb DDR SDRAM |
| H5DU5162EFR-K2J | 512Mb DDR SDRAM |
| H5DU5162EFR-K3C | 512Mb DDR SDRAM |
| H5DU5162EFR-K3J | 512Mb DDR SDRAM |
| H5DU5162EFR-L2C | 512Mb DDR SDRAM |
| H5DU5162EFR-L2J | 512Mb DDR SDRAM |
| H5DU5162ETR-E3C | 512Mb DDR SDRAM |
| H5DU5162ETR-FAC | 512Mb DDR SDRAM |
| H5DU5162ETR-FAI | 512Mb DDR SDRAM |
| H5DU5162ETR-J3C | 512Mb DDR SDRAM |
| H5DU5162ETR-K2C | 512Mb DDR SDRAM |
| H5DU5162ETR-K3C | 512Mb DDR SDRAM |
| H5MS5162DFR-J3M | 512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5MS5162DFR-K3M | 512Mb (32Mx16bit) Mobile DDR SDRAM |
| H5PS5162FFR-16C | 512Mb(32Mx16) DDR2 SDRAM |
| H5PS5162FFR-20C | 512Mb(32Mx16) DDR2 SDRAM |
| H5PS5162FFR-20L | 512Mb(32Mx16) DDR2 SDRAM |
| H5PS5162FFR-C | 512Mb DDR2 SDRAM |
| H5PS5162FFR-C4 | 512Mb DDR2 SDRAM |
| H5PS5162FFR-I | 512Mb DDR2 SDRAM |
| H5PS5162FFR-S5 | 512Mb DDR2 SDRAM |
| H5PS5162FFR-S6 | 512Mb DDR2 SDRAM |
| H5PS5162FFR-Y5 | 512Mb DDR2 SDRAM |
| HY51V65163HG | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
| HY51V65163HGJ-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
| HY51V65163HGJ-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
| HY51V65163HGLJ-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
| HY51V65163HGLJ-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
| HY51V65163HGLJ-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
| HY51V65163HGLT-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
| HY51V65163HGLT-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
| HY51V65163HGLT-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
| HY51V65163HGT-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
| HY51V65163HGT-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
| HY51V65163HGT-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
| HY51VS65163HG | 4M x 16Bit EDO DRAM |
| HY51VS65163HGJ-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
| HY51VS65163HGJ-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
| HY51VS65163HGJ-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
| HY51VS65163HGLJ-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
| HY51VS65163HGLJ-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
| HY51VS65163HGLJ-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
| HY51VS65163HGLT-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
| HY51VS65163HGLT-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
| HY51VS65163HGLT-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
| HY51VS65163HGT-45 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
| HY51VS65163HGT-5 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
| HY51VS65163HGT-6 | 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
| HY57V651620B | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power |
| HY57V651620BLTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power |
| HY57V651620BLTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power |
| HY57V651620BLTC-55 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHz, low power |
| HY57V651620BLTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz, low power |
| HY57V651620BLTC-7 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 143MHz, low power |
| HY57V651620BLTC-75 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 133MHz, low power |
| HY57V651620BLTC-8 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 125MHz, low power |
| HY57V651620BTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz |
| HY57V651620BTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz |
| HY57V651620BTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz |
| HY57V651620BTC-55 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHz |
| HY57V651620BTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz |
| HY57V651620BTC-7 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 143MHz |
| HY57V651620BTC-75 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 133MHz |
| HY57V651620BTC-8 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 125MHz |
ICSI
| Part | Description |
| ICS951601 | General Purpose Frequency Timing Generator |
ICST
| Part | Description |
| ICS8516 | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FY | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYI | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYILF | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYILFT | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYLF | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYLFT | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516FYT | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
| ICS8516I | LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP |
Isahaya Electronics Corporation
| Part | Description |
| 2SC5168 | 200mW/ unitmW Lead frame NPN transistor, maximum rating: 50V Vceo, 100mA Ic, Dual Transistor 250 to 800 hFE. Complementary 2SA1927 |
| 2SC5169 | 200mW/ unitmW Lead frame NPN transistor, maximum rating: 100V Vceo, 50mA Ic, Dual Transistor 250 to 1200 hFE. Complementary 2SA1928 |
Integrated Device Technology
| Part | Description |
| IDT72V15160 | 3.3V MULTIMEDIA FIFO 16 BIT V-III, 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY |
| IDT72V15165 | 3.3 VOLT MULTIMEDIA FIFO 256 x 16, 512 x 16, 1,024 x 16, 2,048 x 16, and 4,096 x 16 |
| IDT72V15165L15TFI | 3.3 VOLT MULTIMEDIA FIFO 256 x 16, 512 x 16, 1,024 x 16, 2,048 x 16, and 4,096 x 16 |
Micronas Intermetall
Infineon Technologies AG
| Part | Description |
| Q67040-S4516 | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE |
| SAB80C516-16 | 8-Bit CMOS Single-Chip Microcontroller |
Intel
INTGR
| Part | Description |
| IW4516BD | Presettable up/down counter, high-voltage silicon-gate CMOS |
| IW4516BN | Presettable up/down counter, high-voltage silicon-gate CMOS |
Intersil Corp.
| Part | Description |
| 2N5516 | Dual N-channel JFET. Low noise amplifier. |
| CA5160_03 | 4MHz, BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output |
| CA5160 | 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output FN1924.4 |
| CA5160E | 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output |
| CA5160M96 | 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output |
| CD4516BMS | Radiation Hardened CMOS Presettable Up/Down Counters |
| EL1516_06 | Dual Ultra Low Noise Amplifier |
| EL1516_07 | Dual Ultra Low Noise Amplifier |
| EL1516 | Dual Ultra Low Noise Amplifier |
| EL1516A | Dual Ultra Low Noise Amplifier |
| EL1516AIY | Dual Ultra Low Noise Amplifier |
| EL1516AIY-T13 | Dual Ultra Low Noise Amplifier |
| EL1516AIY-T7 | Dual Ultra Low Noise Amplifier |
| EL1516AIYZ | Dual Ultra Low Noise Amplifier |
| EL1516AIYZ-T13 | Dual Ultra Low Noise Amplifier |
| EL1516AIYZT13 | Dual Ultra Low Noise Amplifier |
| EL1516AIYZ-T7 | Dual Ultra Low Noise Amplifier |
| EL1516IS | Dual Ultra Low Noise Amplifier |
| EL1516IS-T13 | Dual Ultra Low Noise Amplifier |
| EL1516IS-T7 | Dual Ultra Low Noise Amplifier |
| EL1516ISZ | Dual Ultra Low Noise Amplifier |
| EL1516ISZ-T13 | Dual Ultra Low Noise Amplifier |
| EL1516ISZ-T7 | Dual Ultra Low Noise Amplifier |
| EL1516IY | Dual Ultra Low Noise Amplifier |
| EL1516IY-T13 | Dual Ultra Low Noise Amplifier |
| EL1516IY-T7 | Dual Ultra Low Noise Amplifier |
| EL1516IYZ | Dual Ultra Low Noise Amplifier |
| EL1516IYZ-T13 | Dual Ultra Low Noise Amplifier |
| EL1516IYZ-T7 | Dual Ultra Low Noise Amplifier |
| EL5160 | 200MHz Low-Power Current Feedback Amplifiers |
| EL5160IS | 200 MHz, low-power current feedback amplifier. |
| EL5160IS-T13 | 200 MHz, low-power current feedback amplifier. |
| EL5160IS-T7 | 200 MHz, low-power current feedback amplifier. |
| EL5160ISZ | 200 MHz, low-power current feedback amplifier. |
| EL5160ISZ-T13 | 200 MHz, low-power current feedback amplifier. |
| EL5160ISZ-T7 | 200 MHz, low-power current feedback amplifier. |
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