BUK555-200B Datasheet - PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A. from Philips Semiconductors

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Partname:	BUK555-200B
Description:	PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
Manufacturer:	Philips Semiconductors
Package:	TO220AB
Pins:	3
Oper. temp.:	0 to 175
Datasheet:	PDF (70.5K). Click here to download ^*)

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