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Partname: | BF1205C |
Description: | Dual N-channel dual gate MOS-FET |
Manufacturer: | Philips Semiconductors |
Datasheet: | PDF (171K). Click here to download *) |
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION |
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![Click here to download BF1205C Datasheet](../../../pndecoder/datasheets/PHLPS/img/010070.gif) Click here to download BF1205C Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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