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| Partname: | BF1205C |
| Description: | Dual N-channel dual gate MOS-FET |
| Manufacturer: | Philips Semiconductors |
| Datasheet: | PDF (171K).
Click here to download *) |
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION |
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Click here to download BF1205C Datasheet*) |
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