More than 1 000 000 components listed

ChipDocs found 1357191 documents matching your query . Displaying 1 - 20 Pages:   1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >>   Part Description Package Pins Temp. range PDF size Min Max 1.   - - -   Part Description Package Pins Temp. range PDF size Min Max 2.  IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. TO-204AA 3 -55°C 150°C 159K 3.  CNY29 Photon coupled interrupter module. GaAs infrared emitting diode & silicon photo-darlington. - 4 -55°C 85°C 80.5 4.  CA3019 Ultra-fast low-capacitance matched diodes. TO-5 10 -55°C 125°C 87.6 5.  2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. TO-220AB 3 -65°C 150°C 531K 6.  TIP562 Silicon N-P-N switching transistor. TO-204AA 3 -65°C 200°C 139K 7.  2N6254 High-power silicon N-P-N transistor. 100V, 150W. TO-204AA 3 -65°C 200°C 416K 8.  2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. TO-220AB 3 -65°C 150°C 296K 9.  2N5494 Silicon N-P-N VERSAWATT transistor. 60V, 50W. TO-220AB 3 -65°C 150°C 257K 10.  SGT06U13 Unidirectional transient surge suppressor. Continuous off-stata voltage 58V. TO-202 2 -40°C 85°C 77.6 11.  T2320N 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. TO-202AB 3 -40°C 125°C 188K 12.  T6421M 30-A silicon triac. Vdrom 600 V. Isolated-stud 3 -65°C 100°C 297K 13.  RFM8N18L N-channel logic level power field-effect transistor (LL FET). 180V, 8A. TO-204AA 3 -55°C 150°C 232K 14.  GES5551 NPN silicon transistor. 160V, 600mA. TO-92 3 -55°C 150°C 41.3 15.  CNY47 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. Dual-in-line 6 -55°C 100°C 92.8 16.  2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. TO-204AA 3 -55°C 150°C 115K 17.  4N29 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier. DIL 6 -50°C 100°C 241K 18.  2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. TO-220AB 3 -65°C 150°C 531K 19.  S2800F 10A silicon controlled rectifier. Vdrm, Vrrm 50V. TO-220AB 3 -65°C 125°C 191K 20.  IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. TO-204AA 3 -55°C 150°C 160K   Pages:   1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >>