ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
Part Number Search
Part Number Decoder
Integrated Circuit Logo Finder
Semiconductor Manufacturers
Electronic Components Catalogue
Electronic Circuit Packages
Free Magazines
Advertise with ChipDocs
ChipDocs Worldwide Contact Information
More than
1 000 000
components listed

Find Suppliers on GlobalSpec



ChipDocs found 1324871 documents matching your query .
Displaying 1 - 20
Pages:  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >>
 
Part Description Package Pins Temp. range PDF size
Min Max
1.   - - -
 
Part Description Package Pins Temp. range PDF size
Min Max
2.  2N5495 Silicon N-P-N VERSAWATT transistor. 60V, 50W. TO-220AB 3 -65°C 150°C 257K
3.  BD550B Silicon transistor for quasi-complementary-symmetry audio amplifier. 275V, 150W. TO-204AA 3 -65°C 200°C 62.4
4.  S4060B 10A sensitive-gate silicon controlled rectifier. Vrrxm, 200V. TO-220AB 3 -40°C 125°C 203K
5.  BTA20E 6-A silicon triac. 500 V. TO-220AB 3 -65°C 125°C 226K
6.  T2327B 2.5-A sensitive-gate silicon triac. Max 5 mA gate, Vdrom 200 V. TO-202AB 3 -40°C 125°C 188K
7.  RFP8N20 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 8A. TO-220AB 3 -55°C 150°C 224K
8.  RFM12N10L N-channel logic level power field-effect transistor (LL FET). 100V, 12A. TO-204AA 3 -55°C 150°C 227K
9.  GES5814 Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. TO-92 3 -65°C 135°C 211K
10.  CNY51 Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. Dual-in-line 6 -55°C 100°C 166K
11.  4N32A Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier. Surface-mount packaging 6 -50°C 100°C 241K
12.  BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. TO-220AB 3 -65°C 150°C 116K
13.  2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. TO-204AA 3 -65°C 200°C 190K
14.  IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. TO-204AE 3 -55°C 150°C 193K
15.  IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. TO-220AB 3 -55°C 150°C 163K
16.  2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. TO-204AA 2 -65°C 175°C 286K
17.  2N5296 Silicon N-P-N transistor. 60V, 36W. TO-220AB 3 -65°C 150°C 168K
18.  T2322M 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. TO-202AB 3 -40°C 125°C 188K
19.  RCA9116D Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. TO-204AA 3 -65°C 200°C 239K
20.  BDY92 High-speed silicon N-P-N planar transistor. 80V, 40W. TO-204AA 3 -65°C 175°C 161K
 
Pages:  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >>



 COPYRIGHT 1997-2008 ChipDocs  ALL RIGHT RESERVED