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Description |
Package |
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| Part |
Description |
Package |
Pins |
Temp. range |
PDF size |
| Min |
Max |
| 2. 2N5495 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
TO-220AB |
3 |
-65°C |
150°C |
257K |
| 3. BD550B |
Silicon transistor for quasi-complementary-symmetry audio amplifier. 275V, 150W. |
TO-204AA |
3 |
-65°C |
200°C |
62.4 |
| 4. S4060B |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 200V. |
TO-220AB |
3 |
-40°C |
125°C |
203K |
| 5. BTA20E |
6-A silicon triac. 500 V. |
TO-220AB |
3 |
-65°C |
125°C |
226K |
| 6. T2327B |
2.5-A sensitive-gate silicon triac. Max 5 mA gate, Vdrom 200 V. |
TO-202AB |
3 |
-40°C |
125°C |
188K |
| 7. RFP8N20 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 8A. |
TO-220AB |
3 |
-55°C |
150°C |
224K |
| 8. RFM12N10L |
N-channel logic level power field-effect transistor (LL FET). 100V, 12A. |
TO-204AA |
3 |
-55°C |
150°C |
227K |
| 9. GES5814 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
TO-92 |
3 |
-65°C |
135°C |
211K |
| 10. CNY51 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
Dual-in-line |
6 |
-55°C |
100°C |
166K |
| 11. 4N32A |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier. |
Surface-mount packaging |
6 |
-50°C |
100°C |
241K |
| 12. BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
TO-220AB |
3 |
-65°C |
150°C |
116K |
| 13. 2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
TO-204AA |
3 |
-65°C |
200°C |
190K |
| 14. IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
TO-204AE |
3 |
-55°C |
150°C |
193K |
| 15. IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
TO-220AB |
3 |
-55°C |
150°C |
163K |
| 16. 2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
TO-204AA |
2 |
-65°C |
175°C |
286K |
| 17. 2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
TO-220AB |
3 |
-65°C |
150°C |
168K |
| 18. T2322M |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. |
TO-202AB |
3 |
-40°C |
125°C |
188K |
| 19. RCA9116D |
Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. |
TO-204AA |
3 |
-65°C |
200°C |
239K |
| 20. BDY92 |
High-speed silicon N-P-N planar transistor. 80V, 40W. |
TO-204AA |
3 |
-65°C |
175°C |
161K |
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