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 EPCOS
  |     Semiconductor parts containing 821 
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| Part | Description |  | B82143+1392K000 | Chokes and inductors |  | B82143+1472K000 | Chokes and inductors |  | B82143+1562K000 | Chokes and inductors |  | B82143+1682K000 | Chokes and inductors |  | B82143A1102K000 | Inductors |  | B82143A1103K000 | Inductors |  | B82143A1122K000 | Inductors |  | B82143A1123K000 | Inductors |  | B82143A1152K000 | Inductors |  | B82143A1153K000 | Inductors |  | B82143A1182K000 | Inductors |  | B82143A1183K000 | Inductors |  | B82143A1222K000 | Inductors |  | B82143A1223K000 | Inductors |  | B82143A1272K000 | Inductors |  | B82143A1332K000 | Inductors |  | B82143A1392K000 | Inductors |  | B82143A1562K000 | Inductors |  | B82143A1682K000 | Inductors |  | B82143A1822K000 | Inductors |  | B82144A2102K000 | Inductors |  | B82144A2103K000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2104J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2105J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2106J000 | Inductors |  | B82144A2107J000 | Inductors |  | B82144A2145A500 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2152K000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2154J000 | Inductors |  | B82144A2155J000 | Inductors |  | B82144A2156J000 | Inductors |  | B82144A2222K000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2223K000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2224J000 | Inductors |  | B82144A2225J000 | Inductors |  | B82144A2226J000 | Inductors |  | B82144A2265A000 | Inductors |  | B82144A2305A500 | Inductors |  | B82144A2333J000 | Inductors |  | B82144A2334J000 | Inductors |  | B82144A2335J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2336J000 | Inductors |  | B82144A2472K000 | Inductors |  | B82144A2475J000 | Inductors |  | B82144A2476J000 | Inductors |  | B82144A2535A300 | Inductors |  | B82144A2683J000 | Inductors |  | B82144A2684J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2685J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2686J000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A2984A000 | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144A | Chokes and inductors For high frequency and EMC RF chokes, LBC series, axial |  | B82144B1103K000 | Inductors |  | B82144B1104J000 | Inductors |  | B82144B1105J000 | Inductors |  | B82144B1107J000 | Inductors |  | B82144B1153K000 | Inductors |  | B82144B1154J000 | Inductors |  | B82144B1155J000 | Inductors |  | B82144B1223K000 | Inductors |  | B82144B1332K000 | Inductors |  | B82144B1333J000 | Inductors |  | B82144B1335J000 | Inductors |  | B82144B1336J000 | Inductors |  | B82144B1472K000 | Inductors |  | B82144B1473J000 | Inductors |  | B82144B1474J000 | Inductors |  | B82144B1563J000 | Inductors |  | B82144B1565J000 | Inductors |  | B82144B1682K000 | Inductors |  | B82144B1683J000 | Inductors |  | B82144B1684J000 | Inductors |  | B82144B1824J000 | Inductors |  | B82144B | Inductors |  | B82145A1105J000 | Inductors |  | B82145A1155J000 | Inductors |  | B82145A1224J000 | Inductors |  | B82145A1225J000 | Inductors |  | B82145A1474J000 | Inductors |  | B82145A1475J000 | Inductors |  | B82145A1685J000 | Inductors |  | B82145A | Inductors |  | B82412-A3821-+ | Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 10 mH Rated current 90 to 700 mA |  | B82422-A3821-+ | Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,0082 to 100 mH Rated current 65 to 700 mA |  | B82422A3821K100 | SMT inductors |  | B82422-T1821-+ | Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 330 mH Rated current 40 to 450 mA |  | B82422T1821X000 | SMT inductors |  | B82462G2821M000 | SMT power inductors |  | B82462G4821M000 | SMT power inductors |  | B82464G2821M000 | SMT power inductors |  | B82464G4821M000 | SMT power inductors |  | B82464P4821M000 | SMT power inductors |  | B82464Z4821M000 | SMT power inductors |  | B82477P4821M000 | SMT power inductors |  | B82494A1821K000 | SMT inductors, SIMID series |  | B82494-A1821-K | SMT Inductors, SIMID Series |  | B82498B1821J000 | SMT inductors |  | B82498B1821M000 | SMT inductors |  | B82498F3821J000 | SMT inductors |  | B88069X6821B101 | Surge arrester 2-electrode arrester |  | BUF16821 | Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory |  Ericsson Microelectronics
 
 
| Part | Description |  | PBL385821NS | Telephone Line interface circuit for DECT, DAM, CT Unisolated or Isolated |  | PBL385821SOS | Telephone Line interface circuit for DECT, DAM, CT Unisolated or Isolated |  | PBL385821SOT | Telephone Line interface circuit for DECT, DAM, CT Unisolated or Isolated |  | PGE60821 | EDFA gain block for DWDM applications |  EUPEC
 
 
| Part | Description |  | T821S22TTM | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S22TTN | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S22TUM | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S22TUN | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S24TTM | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S24TTN | 2.4kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S24TUM | 2.2kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S24TUN | 2.4kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S25T1N | Symmetrically Blocking Fast Thyristor, 2500V Repetitive Peak Forward Off-state Voltage |  | T821S25TTM | 2.5kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S25TTN | 2.5kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S25TUM | 2.5kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S25TUN | 2.5kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S26TTM | 2.6kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S26TTN | 2.6kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S26TUM | 2.6kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  | T821S26TUN | 2.6kV V[drm] Max., 820A I[T] Max. Silicon Controlled Rectifier |  EVRLT
 
 
| Part | Description |  | PT2821B | 1.3mm Axial Flat Top Phototransistor |  | PT2821C | 1.3mm Axial Flat Top Phototransistor |  FAGOR
 
 
| Part | Description |  | 1N5821 | 30 V, 3 A schottky barrier rectifier |  | MR821 | 100 V, 5 A glass passivated fast recovery rectifier |  | MR821GP | 5.0A Iout, 100V Vrrm Fast Recovery Rectifier |  Fairchild Semiconductor
 
 FEMA
 
 
| Part | Description |  | LA1821-358 | LED Display |  | LT1821 | General purpose green dome-style LED |  | LT1821F | Green flashing dome-style LED lamp |  | LT4821 | General purpose green dome-style LED |  | LT5821 | LED Lamps, Special Shape |  | LT6821 | LED Lamps, Special Shape |  | LT7821 | LED Lamps, Special Shape |  | LT821 | General purpose green dome-style LED |  | LT8211G | LED Lamps, Special Shape |  | LT8212G | LED Lamps, Special Shape |  | LT8821 | Photoemitter Array |  | LT9821 | General purpose green dome-style LED |  Fujitsu Microelectronics
 
 
| Part | Description |  | MB3821 | 2-ch DC/DC Converter IC With Synchronous Rectifier |  | MB3821PFV | 2-ch DC/DC DC/DC converter IC with synchronous rectifier |  | MB8216EC | General Purpose Dynamic RAM |  | MB8216NC | General Purpose Dynamic RAM |  | MB88210 | CMOS SINGLE-CHIP 4-BIT MICROCOMPUTER WITH A/D CONVERTER |  | MB88211P | Microcontroller |  | MB88211-P | CMOS SINGLE-CHIP 4-BIT MICROCOMPUTER WITH A/D CONVERTER |  | MB89821 | 8-bit Proprietary Microcontroller |  | MB89821PFM | 8-bit proprietary microcontroller |  FORMO
 
 
| Part | Description |  | 1N5821 | 30 V, 3 A schottky barrier rectifier |  | FM5821 | 30 V,  chip schottky barrier diode |  | FM5821-A | 30 V,  chip schottky barrier diode |  | FM5821-AL | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |  | FM5821-ALN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |  FRONT
 
 Freescale Semiconductor
 
 
| Part | Description |  | MC13821_09 | Low Noise Amplifier with Bypass Switch |  | MC13821 | Low Noise Amplifier with Bypass Switch |  | MMA8210TEG | Digital X-Axis or Z-Axis Accelerometer |  | MMA8210TEGR2 | Digital X-Axis or Z-Axis Accelerometer |  | MMA8210TKEGR2 | Digital X-Axis or Z-Axis Accelerometer |  | MMA8215EG | Digital X-Axis or Z-Axis Accelerometer |  | MMA8215EGR2 | Digital X-Axis or Z-Axis Accelerometer |  | MPC821 | PowerPC Personal Syetems Microprocessor |  Fuji Electric Co.
 
 
| Part | Description |  | 1N5821 | 3 AMP SCHOTTKY BARRIER RECTIFIER |  | 2SC3821 | V(cbo): 450V; V(ceo): 400V; V(ceo): 400V; 5A; 40W; mold type high speed switching bipolar transistor |  | 2SK1821-01M | N-channel MOSFET |  | 2SK1821-01MR | N-channel MOSFET |  General Semiconductor
 
 
| Part | Description |  | 1N5821 | Shottky Barrier Rectifier |  | BF821 | Small Signal Transistor (PNP) |  | GI821 | Fast Switching Plastic Rectifier |  GESS
 
 
| Part | Description |  | IRF821 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |  General Instrument (GI)
 
 GLNAR
 
 GODAR
 
 
| Part | Description |  | 1N5821 | 30 V, 3 A, Schottky barrier rectifier |  GSEMI
 
 
| Part | Description |  | 2N2821 | 150V Vcbo, 25A Ic Low frequency power silicon NPN transistor |  GSITE
 
 
| Part | Description |  | GS88218 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218AB-133 | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-133I | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-150 | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-150I | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-166 | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-166I | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-200 | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-200I | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-225 | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-225I | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-250 | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB-250I | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AB | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218AD-133 | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-133I | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-150 | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-150I | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-166 | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-166I | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-200 | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-200I | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-225 | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-225I | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-250 | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218AD-250I | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218B-100 | 100MHz 12ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-100I | 100MHz 12ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-11 | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-11.5 | 100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-11.5I | 100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-11I | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-66 | 66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-66I | 66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-80 | 80MHz 14ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218B-80I | 80MHz 14ns 514K x 18 8Mb S/DCD sync burst SRAM |  | GS88218BB-133 | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-133I | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-150 | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-150I | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-150IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-150V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-166 | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-166I | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-200 | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-200I | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-200IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-200V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-225 | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-225I | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-250 | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-250I | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BB-250IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-3005I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-333 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BB-V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BD-133 | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-133I | 133MHz 8.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-150 | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-150I | 150MHz 7.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-166 | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-166I | 166MHz 7ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-200 | 200MHz 6.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-200I | 200MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-225 | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-225I | 225MHz 6ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-250 | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-250I | 250MHz 5.5ns 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88218BD-300 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BD-300I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BD-333I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BGB-150IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BGB-150V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BGB-200V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88218BGB-250V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |  | GS88219AB-133 | 133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-133I | 133MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-150 | 150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-150I | 150MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-166 | 166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-166I | 166MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-200 | 200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-200I | 200MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-225 | 225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-225I | 225MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-250 | 250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  | GS88219AB-250I | 250MHz 512K x 18 9Mb SCD/DCD sync burst SRAM |  HAMAM
 
 
| Part | Description |  | G8211-11 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | G8211-12 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | G8211-21 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | G8211-22 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | G8211-31 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | G8211-32 | Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |  | P8212 | 20V; 1300mA; light emitting/receiving module. Infrared light emitting/receiving elements for automobile VICS |  | R821 | Spectral responce:160-320nm; between anode and cathode:1250Vdc; 0.01mA; photomultiplier tube |  | S5821-01 | High performance, high reliability Si PIN photodiodes |  | S5821-02 | High performance, high reliability Si PIN photodiodes |  | S5821-03 | High performance, high reliability Si PIN photodiodes |  | S5821 | High performance, high reliability Si PIN photodiodes |  Harris Semiconductor
 
 Hitachi Semiconductor
 
 
| Part | Description |  | HA16821F | Telephone Circuit |  | HA16821MP | Telephone Circuit |  | HA16821P | Telephone Circuit |  | HD6821 | 1MHz NMOS peripheral interface adapter (PIA) |  | HD6821P | 1MHz NMOS peripheral interface adapter (PIA) |  | HD74ALVCH162821 | 3.3V 20-bit Bus Interface Flip-Flop with 3-state Outputs |  | HD74ALVCH16821 | 3.3V 20-bit Bus Interface Flip-Flop with 3-state Outputs |  Holtek Semiconductor Inc.
 
 HP
 
 HSMC
 
 
| Part | Description |  | H1N5821 | 30V 3.0Amp schottky barrier rectifier |  HWELL
 
 HYNIX
 
 Integrated Device Technology
 
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