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 VISAY
  |     Semiconductor parts containing 812 
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| Part | Description |  | Y1758120K500C | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120K500F | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120K500T | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120K500U | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120K500V | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500C | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500D | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500Q | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500S | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500T | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500V | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120M500X | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500B | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500C | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500S | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500U | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500V | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  | Y1758120R500X | Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ?? 0.2 ppm/?°C, Tolerance of ?? 0.001 % and |  VITEL
 
 VITES
 
 
| Part | Description |  | VSC8121 | 2.488GHz SONET/SDH Clock Generator |  | VSC8121QI | 2.488 GHz SONET/SDH clock generator |  | VSC8122 | Multi-Rate SONET/SDH Clock and Data Recovery IC |  | VSC8122-FECQP | Multi-rate SONET/SDH FEC clock and data recovery IC |  | VSC8122QP | Multi-rate SONET/SDH clock and data recovery IC |  | VSC8123 | 10 Mb/s to 2.7 Gb/s rate agile, adaptive clock and data recovery |  | VSC8124 | Target Specification |  | VSC8124RE | 2.488 Gb/s quad data re-timer. 3.3 supply operation |  VLGEN
 
 
| Part | Description |  | B5R-4812 | 5 WATT DC/DC CONVERTER, SINGLE & MULTIPLE OUTPUTS |  | B5R-4812D | 5 WATT DC/DC CONVERTER, SINGLE & MULTIPLE OUTPUTS |  | MSD15-4812 | Primary-Secondary Isolation Voltage |  | MSS15-4812 | Primary-Secondary Isolation Voltage |  | MT10-4812S | 10 WATT DC//DC CONVERTER,, SIINGLE & MULTIIPLE OUTPUTS |  | MT10-4812W | 10 WATT DC//DC CONVERTER,, SIINGLE & MULTIIPLE OUTPUTS |  | MT3-4812SI | 3 WATT DC/DC CONVERTER, SIINGLE & MULTIIPLE OUTPUTS |  | MT3-4812WI | 3 WATT DC/DC CONVERTER, SIINGLE & MULTIIPLE OUTPUTS |  | MT5-4812SI | 5 WATT DC/DC CONVERTER SIINGLE & MULTIIPLE OUTPUTS |  VTRON
 
 Winbond Electronics
 
 
| Part | Description |  | W78L812A24DL | 8-BIT MICROCONTROLLER |  | W78L812A24LL | 8-BIT MICROCONTROLLER |  | W78L812A24PL | 8-BIT MICROCONTROLLER |  | W78L812A | 8-BIT MICROCONTROLLER |  | W78LE812-24 | 8-bit microcontroller |  | W78LE812F-24 | 8-bit microcontroller |  | W78LE812P-24 | 8-bit microcontroller |  | W81281 | USB Keyboard/ Device Controller |  | W81282F-05 | USB Keyboard Controller with 4 Ports Hub |  | W81282F | USB Keyboard Controller with 4 Ports Hub |  | W91812AN | 23-memory tone/pulse switchable dialer with handfree, lock and hold functions |  | W91812N | 23-memory tone/pulse switchable dialer with handfree, lock and hold functions |  | W91F812AN | 23-flash memory tone/pulse dialer with handfree, lock and hold functions |  | W91F812N | 23-flash memory tone/pulse dialer with handfree, lock and hold functions |  | W981208AH | 4M*8bit*4 banks SDRAM |  | W981208BH | 4M*8bit*4 banks SDRAM |  | W981216 | 2M x 16 bit x 4 Banks SDRAM |  | W981216AH | 2M*16bit*4 banks SDRAM |  | W981216BH | 2M*16bit*4 banks SDRAM |  | W9812G2GB | 1M ?? 4 BANKS ?? 32BITS SDRAM |  | W9812G2GB-6I | 1M ?? 4 BANKS ?? 32BITS SDRAM |  | W9812G2GB-75 | 1M ?? 4 BANKS ?? 32BITS SDRAM |  | W9812G2GH | a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ?? 4 banks ?? 32 bits |  | W9812G2GH-6 | a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ?? 4 banks ?? 32 bits |  | W9812G2GH-75 | a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ?? 4 banks ?? 32 bits |  | W9812G6GH-6 | 2M X 4 BANKS X 16 BITS SDRAM |  | W9812G6GH-6C | 2M X 4 BANKS X 16 BITS SDRAM |  | W9812G6GH-75 | 2M X 4 BANKS X 16 BITS SDRAM |  | W9812G6IH-5 | high-speed synchronous dynamic random access memory (SDRAM) |  | W9812G6IH-6C | high-speed synchronous dynamic random access memory (SDRAM) |  | W9812G6IH-6I | high-speed synchronous dynamic random access memory (SDRAM) |  | W9812G6IH-75 | high-speed synchronous dynamic random access memory (SDRAM) |  WHITE
 
 
| Part | Description |  | EDI81257CA | + 5V (+/-10%), High speed 256 K monolithic SRAM |  | EDI81257CA | + 5V (+/-10%), High speed 256 K monolithic SRAM |  | EDI81257CB | High speed 256 K monolithic SRAM |  | EDI81257CB | High speed 256 K monolithic SRAM |  | EDI81257CB | High speed 256 K monolithic SRAM |  | EDI81257CB | High speed 256 K monolithic SRAM |  | EDI81257CB | High speed 256 K monolithic SRAM |  | EDI88128C100CB | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100CC | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100CI | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100CM | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100NB | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100NC | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100NI | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C100NM | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128C | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128C | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128C | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128C | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128C70CB | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70CC | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70CI | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70CM | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70NB | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70NC | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70NI | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C70NM | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85CB | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85CC | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85CI | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85CM | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85NB | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85NC | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85NI | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128C85NM | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100CB | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100CC | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100CI | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100CM | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100NB | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100NC | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100NI | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP100NM | 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128LP | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128LP | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128LP | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128LP | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128LP70CB | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70CC | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70CI | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70CM | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70NB | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70NC | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70NI | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP70NM | 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85CB | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85CC | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85CI | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85CM | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85NB | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85NC | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85NI | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128LP85NM | 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 |  | EDI88128P | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128P | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128P | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128P | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI88128P | + 5V (+/-10%), 128K x 8 static RAM CMOS, monolithic |  | EDI8F8128C | + 5V (+/-10%),128K x 8  SRAM CMOS,module |  | EDI8M8128C | + 5V (+/-10%),128K x 8  SRAM CMOS,module |  | EDI8M8128LP | + 5V (+/-10%),128K x 8  SRAM CMOS,module |  | EDI8M8128P | + 5V (+/-10%),128K x 8  SRAM CMOS,module |  Wing Shing Electronic Co.
 
 
| Part | Description |  | LM7812K | Voltage Regulators |  | WS628128LLFP-70 | Very low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |  | WS628128LLP-70 | Very low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |  | WS628128LLST-70 | Very low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |  | WS628128LLT-70 | Very low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |  WSTAR
 
 
| Part | Description |  | WG128128A | GRAPHIC LCD MODULE display format: 128x128; module size: 85.0x100.0; viewing size: 62.0x62.0; dot size: 0.40x0.40; dot pitch: 0.34x0.34; controller: T6963C; |  | WG128128B | Graphic 128x128 dots LCD Module with Built-in Controller (Sanyo LC7981) |  Xilinx Inc.
 
 
| Part | Description |  | XCV812E-6BG404C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6BG556C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6BG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6BG560C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-6BG560I | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-6BG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6BG900C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG404I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG556C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG560I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-6FG900C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-6FG900I | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E | Extended Memory Field Programmable Gate Arrays |  | XCV812E-7BG404I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7BG560C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-7BG560I | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-7BG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7BG900C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7BG900I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7FG404I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7FG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7FG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7FG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-7FG900C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-7FG900I | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-8BG404I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8BG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8BG560C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-8BG560I | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-8BG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8BG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8BG900C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8BG900I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG404I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG556C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG560C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |  | XCV812E-8FG900C | Virtex-E 1.8V extended memory field programmable gate array. |  | XCV812E-8FG900I | Virtex-E 1.8V extended memory field programmable gate array. |  YAMCH
 
 YSTON
 
 
| Part | Description |  | BD-A812RD | Green, anode,  dual digit LED display |  | BD-C812RD | Green, cathode,  dual digit LED display |  | BD-E812RD | Green, anode,  dual digit LED display |  | BD-E812RD-A | Green, anode,  dual digit LED display |  | BD-F812RD | Green, cathode,  dual digit LED display |  | BF-U812RD | Green, anode/cathode,  single-digit LED display |  | BS-A812RD | Green, anode,  single-digit LED display |  | BS-C812RD | Green, cathode,  single-digit LED display |  | BT-M812RD | Green, anode, three digit LED display |  | BT-N812RD | Green, cathode, three digit LED display |  Zetex Semiconductors
 
 
| Part | Description |  | ZC2812E | Schottky barrier diode |  ZILOG
 
 
| Part | Description |  | Z86C0812PAC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86C0812PEC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86C0812PSC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86C0812SAC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86C0812SEC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86C0812SSC | CMOS 8-bit low-cost microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 3.0V to 5.5V |  | Z86E0812PEC | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812PSC1860 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V |  | Z86E0812PSC1866 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812PSC1903 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812PSC1924 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V |  | Z86E0812SEC1903 | CMOS Z8 OTP MICROCONTROLLERS |  | Z86E0812SEC | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812SSC1860 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V |  | Z86E0812SSC1866 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812SSC1903 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V |  | Z86E0812SSC1924 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V |  Zarlink Semiconductor
 
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