Page 2. Semiconductor parts with 606 in root number

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Semiconductor parts containing 606 in root number. Page 2.

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Microsemi Corp.

Part	Description
SPB16060	Schottky Rectifier
ST6060	Silicon Dual Power Rectifier
UES2606	Ultra Fast Rectifier (less than 100ns)
UES2606HR2	Ultra Fast Rectifier (less than 100ns)
UM6606	PIN Diode
UM9606	PIN Diode

MSIEI

Part	Description
G606A	25V Vrrm, 6.8pF Capacitance Varactor Diode
G606ACHIP	25V Vrrm, 6.8pF Capacitance Varactor Diode
G606B	25V Vrrm, 6.8pF Capacitance Varactor Diode
G606BCHIP	25V Vrrm, 6.8pF Capacitance Varactor Diode
G606C	25V Vrrm, 6.8pF Capacitance Varactor Diode
G606CCHIP	25V Vrrm, 6.8pF Capacitance Varactor Diode
GC1606A	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606A-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606A-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606B	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606B-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606B-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606D	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606D-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606D-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606E	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606E-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606E-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606F	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606F-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606F-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606H	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606H-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606H-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606T	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606T-+2	45V Vrrm, 2.7pF Capacitance Varactor Diode
GC1606T-+5	45V Vrrm, 2.7pF Capacitance Varactor Diode
ZB606	12V Vrrm, 66pF Capacitance Varactor Diode

NEC Electronics Inc.

Part	Description
2SC5606	NPN epitaxial silicon transistor
2SC5606-T1	NPN epitaxial silicon transistor
2SJ606	MOS FIELD EFFECT TRANSISTOR
2SJ606-S	MOS FIELD EFFECT TRANSISTOR
2SJ606-Z	MOS FIELD EFFECT TRANSISTOR
2SJ606-ZJ	MOS FIELD EFFECT TRANSISTOR
LD4606A	27.5-29.1GHz, 350W Klystron for Communications
NDL7911PC606	1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1560.61 nm. Frequency 192.1 THz.
NDL7911PD606	1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1560.61 nm. Frequency 192.1 THz.
NDL7912PC606	1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1560.61 nm. Frequency 192.1 THz.
NDL7912PD606	1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1560.61 nm. Frequency 192.1 THz.
NX8560LJ606-BC	EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-UPC connector.
NX8560LJ606-CC	EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC connector.
NX8560SJ606-BC	EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-UPC connector.
NX8560SJ606-CC	EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector.
NX8562LB606-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. Anode ground. FC-PC connector.
NX8562LB6066-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1606.60 nm. Frequency 186.60 THz. Anode ground. FC-PC connector.
NX8562LF606-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. Anode floating. FC-PC connector.
NX8562LF6066-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1606.60 nm. Frequency 186.60 THz. Anode floating. FC-PC connector.
NX8563LA606-CC	Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC.
NX8563LA606-CD	Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-APC.
NX8563LAS606-CC	Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC.
NX8563LAS606-CD	Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-APC.
NX8563LB606-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-PC connector. Anode ground.
NX8563LB606-CA	CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS
NX8563LB6066-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1606.06 nm. Frequency 186.60 THz. FC-PC connector. Anode ground.
NX8563LF606-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-PC connector. Anode floating.
NX8563LF6066-BA	CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1606.60 nm. Frequency 186.60 THz. FC-PC connector. Anode floating.
NX8564LE606-BC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-UPC connector.
NX8564LE606-CC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC connector.
NX8565LE606-BC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-UPC connector.
NX8565LE606-CC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC connector.
NX8566LE606-BC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. FC-UPC connector.
NX8566LE606-CC	EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.60 nm. Frequency 192.10 THz. SC-UPC connector.
NX8567SA606-BC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-UPC connector.
NX8567SA606-CC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector.
NX8567SAM606-BC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-UPC connector.
NX8567SAM606-CC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector.
NX8567SAS606-BC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-UPC connector.
NX8567SAS606-CC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector.
NX8570SC606-BA	CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector.
NX8570SC606-CA	CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector.
NX8571SC606-BA	CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector.
NX8571SC606-CA	CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector.
PS2606	AC input response type photo coupler. High isolation voltage.
PS2606	High isolation voltage AC input response type optocoupler.
PS2606	Optocoupler, CTR 80-600%
PS2606L	High isolation voltage AC input response type optocoupler.
PS2606L	AC input response type photo coupler. High isolation voltage.
PS2606L	Optocoupler, CTR 80-600%
UPA606T	Nch/MOS FET (2 chips each)

New Japan Radio Co., Ltd.

Part	Description
NJM2606	LOW VOLTAGE DC MOTOR CONTROLLER
NJM2606A	LOW VOLTAGE DC MOTOR CONTROLLER
NJM2606AD	Low voltage DC motor controller
NJM2606AM	Low voltage DC motor controller
NJM2606D	Low voltage DC motor controller
NJM2606M	Low voltage DC motor controller
NJU6060	Full Color LED Controller Driver with PWM Control
NJU6060V	Full Color LED Controller Driver with PWM Control
NJU6061	Full Color LED Controller Driver with PWM Control
NJU6061P	Full Color LED Controller Driver with PWM Control

National Semiconductor

Part	Description
5962-9160601M3A	10-Bit D Flip-Flop with TRI-STATE Outputs
5962-9160601MKA	10-Bit D Flip-Flop with TRI-STATE Outputs
5962-9160601MLA	10-Bit D Flip-Flop with TRI-STATE Outputs
5962-9860601QKA	8-Bit Dual Supply Translating Transceiver with 3-STATE Outputs
5962-9860601QLA	8-Bit Dual Supply Translating Transceiver with 3-STATE Outputs
ADC16061	Self-Calibrating 16-Bit, 2.5 MSPS, 390 mW A/D Converter
ADC16061CCVT	Self-Calibrating 16-Bit, 2.5 MSPS, 390 mW A/D Converter
HPC16064	High-Performance microController
HPC26064	High-Performance microController
HPC36064	High-Performance microController
HPC46064	High-Performance microController
LMC6061	Precision CMOS Single Micropower Operational Amplifier
LMC6061AIM	Precision CMOS Single Micropower Operational Amplifier
LMC6061AIMX	Precision CMOS Single Micropower Operational Amplifier
LMC6061AIN	Precision CMOS Single Micropower Operational Amplifier
LMC6061AMJ/883	Precision CMOS Single Micropower Operational Amplifier
LMC6061AMN	Precision CMOS Single Micropower Operational Amplifier
LMC6061IM	Precision CMOS Single Micropower Operational Amplifier
LMC6061IMX	Precision CMOS Single Micropower Operational Amplifier
LMC6061IN	Precision CMOS Single Micropower Operational Amplifier
LMC6061MWC	Precision CMOS Single Micropower Operational Amplifier
LMC6062	Precision CMOS Dual Micropower Operational Amplifier
LMC6062AIM	Precision CMOS Dual Micropower Operational Amplifier
LMC6062AIMX	Precision CMOS Dual Micropower Operational Amplifier
LMC6062AIN	Precision CMOS Dual Micropower Operational Amplifier
LMC6062AMJ/883	Precision CMOS Dual Micropower Operational Amplifier
LMC6062AMN	Precision CMOS Dual Micropower Operational Amplifier
LMC6062IM	Precision CMOS Dual Micropower Operational Amplifier
LMC6062IMX	Precision CMOS Dual Micropower Operational Amplifier
LMC6062IN	Precision CMOS Dual Micropower Operational Amplifier
LMC6064	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AIM	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AIMX	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AIN	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AMJ	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AMJ/883	Precision CMOS Quad Micropower Operational Amplifier
LMC6064AMN	Precision CMOS Quad Micropower Operational Amplifier
LMC6064IM	Precision CMOS Quad Micropower Operational Amplifier
LMC6064IMX	Precision CMOS Quad Micropower Operational Amplifier
LMC6064IN	Precision CMOS Quad Micropower Operational Amplifier
NDP606A	N-Channel Enhancement Mode Power Fleid Effect Transistor
NDP606B	N-Channel Enhancement Mode Power Fleid Effect Transistor

NTE

Part	Description
NTE1606	Integrated circuit. Dual audio power amplifier, 4W to 7W.
NTE5606	TRIAC, 4 Amp. Peak repetitive off-state voltage Vdrm = 500V.
NTE56060	TRIAC, 16A. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 16A.
NTE56063	TRIAC, 8A, high commutation. Repetitive peak off-state voltage Vdrm = 600V. RMS on-state current 8A.
NTE56064	TRIAC, 8A, high commutation. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 8A.
NTE56065	TRIAC, 12A, high commutation. Repetitive peak off-state voltage Vdrm = 600V. RMS on-state current 12A.
NTE56066	TRIAC, 16A, high commutation. Repetitive peak off-state voltage Vdrm = 600V. RMS on-state current 16A.
NTE56067	TRIAC, 16A, high commutation. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 16A.
NTE56068	TRIAC, 16A, high commutation. Repetitive peak off-state voltage Vdrm = 600V. RMS on-state current 16A.
NTE56069	TRIAC, 16A, high commutation. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 16A.
NTE6060	Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 400V. Max forward current 70A.
NTE6061	Industrial silicon recfifier. Anode to case. Max peak reverse voltage 400V. Max forward current 70A.
NTE6064	Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 600V. Max forward current 70A.
NTE6065	Industrial silicon recfifier. Anode to case. Max peak reverse voltage 600V. Max forward current 70A.
NTE6068	Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A.
NTE6069	Industrial silicon recfifier. Anode to case. Max peak reverse voltage 800V. Max forward current 70A.

OKI

Part	Description
MSM6606	Single-chip LCD driver for muitiplexed configurations
MSM6606GS-BK	80-dot LCD driver with key matrix

OMNI

Part	Description
OM6060SB	800V N-channel MOSFET
OM6061SB	1000V N-channel MOSFET

ON Semiconductor

Part	Description
MC100H606	Registered Hex TTL/PECL Translator
MC100H606FN	Registered Hex TTL/PECL Translator
MC100H606FNG	Registered Hex TTL/PECL Translator
MC10H606	Registered Hex TTL/PECL Translator
MC10H606FN	Registered Hex TTL/PECL Translator
MC10H606FNG	BBG ECL TRNSLATR HEX
MC10H606FNR2	Registered Hex TTL/PECL Translator
MC10H606FNR2G	BBG ECL TRNSLATR HEX

OPTEK

Part	Description
OPB606	REFLECTIVE OBJECT SENSORS
OPB606A	Reflective object sensor
OPB606B	Reflective object sensor
OPB606C	Reflective object sensor

PAJIT

Part	Description
CP606	Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 600V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC).
ED606CS	DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified current (Tc=75degC) 6.0A.
ED606CT	Super fast recovery rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified current (Tc=75degC) 6.0A.
PG606R	Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current at Ta = 60degC 6.0 A.
PS606R	Fast switching plastic rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current at Ta = 55degC 6.0 A.
UF1606FCT	Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current at Tc = 100degC 16.0 A.
UF606	Ultrafast switching rectifier. Peak reverse voltage 600 V. Average forward current 6.0 A.
UF606G	Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 600 V. Average forward current 6.0 A.

Panasonic (Matsushita)

Part	Description
1N4606	Silicon epitaxial planar type diode.
2SB1606	Silicon PNP epitaxial planar type power transistor
2SC4606	Silicon NPN epitaxial planer type small signal transistor
LNA2606L	GaAlAs on GaAs Infrared Light Emitting Diode
MN86062	CODEC LSI for Facsimile Images
MN86063	High-Speed CODEC LSI for Facsimile Images

PERK

Part	Description
VTB6061	Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061B	Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K.
VTB6061CIE	Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux.
VTB6061J	Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061UV	Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTB6061UVJ	Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K.
VTP6060	Process photodiodes

Philips Semiconductors

Part	Description
BUK7606-30	TrenchMOS transistor. Standard level FET.
BUK7606-30	30 V, tranch MOS transistor standard level FET
BUK7606-55A	TrenchMOS transistor Standard level FET
BUK7606-75B	TrenchMOS standard level FET
BUK9606-30	30 V, tranch MOS transistor logic level FET
BUK9606-30	TrenchMOS transistor. Logic level FET.
BUK9606-55A	TrenchMOS transistor Logic level FET
NE57606	2 to 4 cell redundant Lithium-ion overcharge monitor
NE57606CD	2 to 4 cell redundant Lithium-ion overcharge monitor
NE57606DD	2 to 4 cell redundant Lithium-ion overcharge monitor
NE57606ED	2 to 4 cell redundant Lithium-ion overcharge monitor
NE57606YD	2 to 4 cell redundant Lithium-ion overcharge monitor
OM5606	87.5-108 MHz, Multimedia radio tuner
PCA1606	32 kHz watch circuits with EEPROM
PCA1606U/10	32 kHz watch circuits with EEPROM
PCA1606U/10	32 kHz watch circuit with EEPROM
PCA1606U/10/F2	32 kHz watch circuits with EEPROM
PCA1606U/F2	32 kHz watch circuits with EEPROM
SA56606-20	CMOS system reset
SA56606-20GW	2.0 V, CMOS system reset
SA56606-27	CMOS system reset
SA56606-27GW	2.7 V, CMOS system reset
SA56606-28	CMOS system reset
SA56606-28GW	2.8 V, CMOS system reset
SA56606-29	CMOS system reset
SA56606-29GW	2.9 V, CMOS system reset
SA56606-30	CMOS system reset
SA56606-30GW	3.0 V, CMOS system reset
SA56606-31	CMOS system reset
SA56606-31GW	3.1 V, CMOS system reset
SA56606-42	CMOS system reset
SA56606-42GW	4.2 V, CMOS system reset
SA56606-43	CMOS system reset
SA56606-43GW	4.3 V, CMOS system reset
SA56606-44	CMOS system reset
SA56606-44GW	4.4 V, CMOS system reset
SA56606-45	CMOS system reset
SA56606-45GW	4.5 V, CMOS system reset
SA56606-46	CMOS system reset
SA56606-46GW	4.6 V, CMOS system reset
SA56606-47	CMOS system reset
SA56606-47GW	4.7 V, CMOS system reset
SA606	Low-voltage high performance mixer FM IF system
SA606D	Low-voltage high performance mixer FM IF system.
SA606D	Low-voltage high performance mixer FM IF system
SA606DK	Low-voltage high performance mixer FM IF system
SA606DK	Low-voltage high performance mixer FM IF system.
SA606N	Low-voltage high performance mixer FM IF system
TDA3606	Multiple voltage regulator with battery detection
TDA3606A	Multiple voltage regulator with battery detection
TDA3606AT	Multiple output voltage regulator
TDA3606AT/N1	Multiple voltage regulator with battery detection
TDA3606T	Multiple output voltage regulator
TDA3606T/N1	Multiple voltage regulator with battery detection
TSA6060	Fast radio tuning PLL frequency synthesizer
TSA6060T	Fast radio tuning PLL frequency synthesizer

PWRX

Part	Description
ME501606	1600V, 60A general purpose 3-phase bridge diode
PA431606	POW-R-BLOK AC Switch SCR Isolated Module (1330 Amps RMS, Up to 2400 Volts)
R3400606	6.0A Iout, 600V Vrrm General Purpose Silicon Rectifier
R7200606	600V, 600A general purpose single diode
R7200606XXOO	600A Iout, 600V Vrrm General Purpose Silicon Rectifier
R7201606	1400V, 600A general purpose single diode
R7201606XXOO	600A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier
R7202606	2600V, 600A general purpose single diode
R7202606XXOO	600A Iout, 2.6kV Vrrm General Purpose Silicon Rectifier
R7220606	Fast Recovery Rectifier (650Amperes Average 1600 Volts)
R7220606ESOO	650A Iout, 600V Vrrm Fast Recovery Rectifier
R7220606HS	600V, 600A fast recovery single diode
R7221606	Fast Recovery Rectifier (650Amperes Average 1600 Volts)
R7221606AS	1600V, 600A fast recovery single diode
R7221606CS	1600V, 600A fast recovery single diode
R7221606ESOO	650A Iout, 1.6kV Vrrm Fast Recovery Rectifier
R7SP1606WF	600A Iout, 1.6kV Vrrm Fast Recovery Rectifier
R7SP1606WZ	600A Iout, 1.6kV Vrrm Fast Recovery Rectifier

QRG

Part	Description
QT60645-AS	0.5-5.5V; 10mA; 32,48,64-key QMatrix keypanel sensor IC. For security keypanels, industrial keyboards, appliance controls, outdooor keypads, ATM machines, touch-screens, automotive controls, machine tools
QT60645-S	0.5-5.5V; 10mA; 32,48,64-key QMatrix keypanel sensor IC. For security keypanels, industrial keyboards, appliance controls, outdooor keypads, ATM machines, touch-screens, automotive controls, machine tools
QT60645B-AS	0.5-5.5V; 10mA; 32,48,64-key QMatrix keypanel sensor IC. For security keypanels, industrial keyboards, appliance controls, outdooor keypads, ATM machines, touch-screens, automotive controls, machine tools

Part	Description
MAN6060	Display. RHDP

QUATR

Part	Description
FGP606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

RECTR

Part	Description
FR606	Fast recovery rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 6.0A.
RL1606C	Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC.
RL1606CS	Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC.
RS606	Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 6.0A at Tc=75degC
RS606M	Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified output current 6.0A at Tc=100degC
SFR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

RENES

Part	Description
E2081606_PF08127B	MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

RFE

Part	Description
FR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier
FR606G	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

ROHM Co.

Part	Description
1N3606	150mA Iout, 75V Vrrm Fast Recovery Rectifier
1N4606	200mA Iout, 85V Vrrm Fast Recovery Rectifier
BA7606	Video signal switcher
BA7606F	Video signal switcher
RLS4606	250mA Iout, 85V Vrrm Fast Recovery Rectifier

Semelab Plc.

Part	Description
2N5606	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

SANYO Electric Co., Ltd.

Part	Description
2SA1606	PNP epitaxial planar silicon transistor, high-voltage switching, AF 100W driver application
ECH8606	Ultrahigh-Speed Switching Applications
F606	PNP epitaxial silicon transistor, high-current switching application
FX606	Ultrahigh-Speed Switching Applications
LA5606N	BC/CS tuner regulator with On/Off function
LA8606	Cordless Telephone Signal Processor
LA8606M	Cordless telephone signal processor
MCH6606	Ultrahigh-Speed Switching Applications

Semtech Corp.

Part	Description
KBPC606	6.0A SINGLE - PHASE SILICON BRIDGE
SC606	Low-Noise Smart LED Driver with Serial Interface
SC606AIMLTRT	Low-Noise Smart LED Driver with Serial Interface

SIMTK

Part	Description
5962-9305606MXA	CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM
5962-9305606MXC	CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM
5962-9305606MYA	CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM
5962-9305606MYC	CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM

SINO

Part	Description
SFR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier
SFR606G	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

Semicon Components Inc.

Part	Description
1N1606	15V, 10Wt General purpose voltage reference/regulator diode
1N1606A	15V, 10Wt General purpose voltage reference/regulator diode
1N606	300mA Iout, 600V Vrrm General Purpose Silicon Rectifier
1N606A	300mA Iout, 600V Vrrm General Purpose Silicon Rectifier
SUES2606	30A Iout, 400V Vrrm General Purpose Silicon Rectifier
SUES606	30A Iout, 400V Vrrm General Purpose Silicon Rectifier

Siemens

Part	Description
Q62702-C2606	NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Q62702-P1606	NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH606	5.3 kV TRIOS optocoupler high rel/fast transistor

SMTC

Part	Description
Z6068	1500W transient voltage suppressor, 68V
Z6068U	1500W transient voltage suppressor, 68V

SMTUK

Part	Description
FR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

Sanken Electric Co.

Part	Description
RBV-606	Rectifier Diode
RBV-606H	Rectifier Diode

SONIX

Part	Description
SN66060	3 V, 4-channel speech controller

SONY Semiconductors

Part	Description
CXD3606R	Timing Generator for Frame Readout

SSDI

Part	Description
2N6606	60V V[drm] Max., 275mA I[T] Max. Silicon Controlled Rectifier
SDR606	600 V, 15 A ultra fast recovery rectifier
SHA2606	400 V, 30 A ultra fast centertap rectifier

SSE

Part	Description
KBPC606	Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 6.0 A.

STI

Part	Description
1N4606	200mA Iout, 85V Vrrm Fast Recovery Rectifier

SGS-Thomson Microelectronics

Part	Description
STBR606	50-60Hz RECTIFICATION BRIDGE
TXN606	600V V[drm] Max., 5A I[T] Max. Silicon Controlled Rectifier
TYN606	6A SCRS
TYS606-05	50V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS606-1	100V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS606-2	200V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS606-4	400V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS606-6	600V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier
TYS606-8	800V V[drm] Max., 6.0A I[T] Max. Silicon Controlled Rectifier

Semitronics Corp.

Part	Description
1N1606	15V, 10Wt General purpose voltage reference/regulator diode
1N1606A	15V, 10Wt General purpose voltage reference/regulator diode
1N1606R	15V, 10Wt General purpose voltage reference/regulator diode
1N3606	150mA Iout, 75V Vrrm Fast Recovery Rectifier
1N4606	200mA Iout, 85V Vrrm Fast Recovery Rectifier

SURGE

Part	Description
KBU606	800 V, 6.0 A single phase silicon bridge rectifier
SB606	800 V, 6.0 A silicon bridge

SUTEX

Part	Description
HV9606	HV9606 Current-Mode PWM Controller with Supervisor
HV9606DB1	Current mode PWM controller with supervisor
HV9606SP	250V current mode PWM controller with supervisor
HV9606X	250V current mode PWM controller with supervisor
TN0606	N-Channel Enhancement-Mode Vertical DMOS FETs
TN0606N3	60V N-channel enhancement-mode vertical DMOS FET
TN0606N5	100V N-channel enhancement-mode vertical DMOS FET
TP0606	P-Channel Enhancement-Mode Vertical DMOS FETs
TP0606N3	60V P-channel enhancement-mode vertical DMOS FET
VN0606	N-Channel Enhancement-Mode Vertical DMOS FETs
VN0606L	60V N-channel enhancement-mode vertical DMOS FET

TECOR

Part	Description
D6065J	41A Iout, 600V Vrrm General Purpose Silicon Rectifier
S6065J	Thyristor, 65 amperes, 600 volt
S6065J	600 V, 65 A SCR
S6065K	600 V, 65 A SCR
S6065P	Thyristor, 65 amperes, 600 volt

TEL

Part	Description
CP606	600 V single phase silicon bridge
TS606R	600 V, 6 A, glass passivated junction fast switching rectifier
UF1606	600 V, 16 A, ultrafast switching rectifier
UF606	600 V, 6 A, ultrafast switching rectifier

TERRY

Part	Description
FR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

Vishay Telefunken

Part	Description
VN0606L	N-channel 60V MOSFET

THOMS

Part	Description
SK3606	15A Iout, 200V Vrrm General Purpose Silicon Rectifier
SK606	120V, 50Wt General purpose voltage reference/regulator diode

Texas Instruments

Part	Description
20606F	Snap-Action Automatic and Manual reset Fixed Temperature Thermostats
20606L	Snap-Action Automatic and Manual reset Fixed Temperature Thermostats
3606BG	Digitally-Controlled Programmable Gain Instrumentation Amplifier
41AA1606E	40/41/42AA Series ELECTRONIC MOTOR PROTECTION
5962-86061012A	Quadruple 2-Line To 1-Line Data Selectors/Multiplexers
5962-8606101EA	Quadruple 2-Line To 1-Line Data Selectors/Multiplexers
5962-8606201RA	High-Speed CMOS Logic Octal Inverting Transparent Latch, Three-State Outputs
5962-88606012A	3-Line To 8-Line Decoders/Demultiplexers With Address Latches
5962-8860601EA	High Speed CMOS Logic 3-to-8 Line Decoder Demutiplexer with Address Latches
5962-9321606Q2A	Excalibur Low-Noise High-Speed Precision Quad Operational Amplifier
5962-9321606QCA	Excalibur Low-Noise High-Speed Precision Quad Operational Amplifier
5962-9560601Q2A	OCTAL TRANSCEIVERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS
5962-9560601QRA	Octal Transceivers And Line/MOS Drivers With 3-State Outputs
5962-9560601QSA	Octal Transceivers And Line/MOS Drivers With 3-State Outputs
5962-9760601NXB	MILITARY DIGITAL SIGNAL PROCESSORS
5962-9760601Q9A	MILITARY DIGITAL SIGNAL PROCESSORS
74LS606	OCTAL 2 INPUT MULTIPLEXED LATES
ADS1606IPAPR	16 Bit, 5MSPS Single Channel Delta-Sigma ADC Single with FIFO
ADS1606IPAPRG4	16 Bit, 5MSPS Single Channel Delta-Sigma ADC Single with FIFO
ADS1606IPAPT	16 Bit, 5MSPS Single Channel Delta-Sigma ADC Single with FIFO
ADS1606IPAPTG4	16 Bit, 5MSPS Single Channel Delta-Sigma ADC Single with FIFO
JM38510/50606BRA	LOW-POWER HIGH-PERFORMANCE IMPACT(TM) PAL(R) CIRCUITS
PCM1606EG4	24-Bit 192kHz Sampling 6-Ch Enhanced Multilevel Delta-Sigma D/A Converter
PT6606	9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR
PT6606B	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
PT6606D	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
PT6606E	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
PT6606F	1.8Vout 9A 3.3V/5V-Input Adjustable ISR
PT6606G	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
PT6606L	1.8Vout 9A 3.3V/5V-Input Adjustable ISR
PT6606M	1.8Vout 9A 3.3V/5V-Input Adjustable ISR
PT6606P	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
PT6606Q	1.8Vout 9A 3.3V/5V-Input Adjustable ISR
PT6606R	1.8VOUT 9AMP 3.3V/5V-INPUT ADJUSTABLE ISR
SN54LS606	OCTAL 2 INPUT MULTIPLEXED LATES
SN74LS606	OCTAL 2 INPUT MULTIPLEXED LATES
THS6062	LOW-NOISE ADSL DUAL DIFFERENTIAL RECEIVER
THS6062CD	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062CDGN	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062CDGNR	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062CDGNRG4	Low-Noise ADSL Dual Differential Receiver
THS6062CDR	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062CDRG4	Low-Noise ADSL Dual Differential Receiver
THS6062D	LOW-NOISE ADSL DUAL DIFFERENTIAL RECEIVER
THS6062DGN	LOW-NOISE ADSL DUAL DIFFERENTIAL RECEIVER
THS6062EVM	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062ID	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062IDGN	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062IDGNG4	Low-Noise ADSL Dual Differential Receiver
THS6062IDGNR	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
THS6062IDGNRG4	Low-Noise ADSL Dual Differential Receiver
THS6062IDR	LOW-NOISE ADSL DIFFERENTIAL RECEIVER
TIP606	-80 V, -10 A, 100 W, PNP darlington-connected silicon power transistor
TLV5606	2.7 V TO 5.5 V LOW POWER 10-BIT DIGITAL-TO-ANALOG CONVERTERS WITH POWER DOWN
TLV5606CD	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606CDG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606CDGK	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606CDGKG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606CDGKR	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606CDGKRG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606CDR	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606CDRG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606D	2.7 V TO 5.5 V LOW POWER 10-BIT DIGITAL-TO-ANALOG CONVERTERS WITH POWER DOWN
TLV5606DGK	2.7 V TO 5.5 V LOW POWER 10-BIT DIGITAL-TO-ANALOG CONVERTERS WITH POWER DOWN
TLV5606ID	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606IDG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606IDGK	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606IDGKG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606IDGKR	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606IDGKRG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TLV5606IDR	10-BIT, 2 OR 9 US DAC, SERIAL OUT, PGRMABLE SETTLING TIME/PWR CONSUMPTION, ULTRA LOW POWER
TLV5606IDRG4	10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power
TPS3606-33	Battery-Backup Supervisor for Low Power Processor
TPS3606-33DGS	Battery-Backup Supervisor for Low Power Processor
TPS3606-33DGSG4	Battery-Backup Supervisor for Low Power Processor
TPS3606-33DGSR	Battery-Backup Supervisor for Low Power Processor
TPS3606-33DGSRG4	Battery-Backup Supervisor for Low Power Processor
UCC5606	9-Line 3-5 Volt SCSI Active Terminator, Reverse Disconnect
UCC5606DP	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606DPTR	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606DPTRG4	Lowest Capacitance 9-Line 3-5V SE Terminator for SCSI Through Ultra SCSI with Reverse Disconnect
UCC5606J	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606N	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606NG4	Lowest Capacitance 9-Line 3-5V SE Terminator for SCSI Through Ultra SCSI with Reverse Disconnect
UCC5606PWP	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606PWPG4	Lowest Capacitance 9-Line 3-5V SE Terminator for SCSI Through Ultra SCSI with Reverse Disconnect
UCC5606PWPTR	LOWEST CAPACITANCE 9-LINE 3-5V SE TERMINATOR FOR SCSI THROUGH ULTRA SCSI WITH REVERSE DISCONNECT
UCC5606PWPTRG4	Lowest Capacitance 9-Line 3-5V SE Terminator for SCSI Through Ultra SCSI with Reverse Disconnect
V62/03606-01XE	Military Enhanced Plastic High Speed CMOS Logic Analog Multiplexers/Demultiplexers
V62/04606-01XA	Military Enhanced Plastic Fixed-Point Digital Signal Processor, Military
V62/05606-01XE	Military Enhanced Plastic 8-Bit Universal Bus Transceiver and Two 1-Bit Bus Transceivers
V62/05606-01YE	Military Enhanced Plastic 8-Bit Universal Bus Transceiver and Two 1-Bit Bus Transceivers

Toshiba

Part	Description
1N4606	SILICON EPITAXIAL PLANAR TYPE DIODE
2SC3606	Silicon NPN transistor for VHF-UHF band low noise amplifier applications
2SK2606	N-channel MOSFET for DC−DC converter, relay drive and motor drive applications
RN1606	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN4606	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
TB6066FNG	Shock Sensor IC

TRSYS

Part	Description
CP606	600 V, 6 A, single-phase silicon bridge
TS606R	600 V, 6 A, glass passivated junction fast switching rectifier
UF1606	600 V, 16 A, ultrafast switching rectifier
UF606	600 V, 6 A, ultrafast switching rectifier

TSC

Part	Description
CR606	6.0A Iout, 800V Vrrm General Purpose Silicon Rectifier

UFOTT

Part	Description
FR606	6.0A Iout, 800V Vrrm Fast Recovery Rectifier

UTMC

Part	Description
5962-9960601QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose none.
5962-9960601QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose none.
5962-9960601QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory optional. Total dose none.
5962-9960601TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
5962-9960601TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
5962-9960601TUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose none.
5962-9960602QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose none.
5962-9960602QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose none.
5962-9960602QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose none.
5962-9960602TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose none.
5962-9960602TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose none.
5962-9960602TUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
5962D9960601QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
5962D9960601QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
5962D9960601QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
5962D9960601TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
5962D9960601TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
5962D9960601TUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
5962D9960602QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
5962D9960602QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
5962D9960602QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
5962D9960602TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
5962D9960602TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
5962D9960602TUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
5962P9960601QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
5962P9960601QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
5962P9960601QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
5962P9960601TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
5962P9960601TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
5962P9960601TUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
5962P9960602QUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 3E4 (30krad(Si)).
5962P9960602QUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 3E4 (30krad(Si)).
5962P9960602QUX	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 3E4 (30krad(Si)).
5962P9960602TUA	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 3E4 (30krad(Si)).
5962P9960602TUC	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 3E4 (30krad(Si)).