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Semiconductor parts containing 406
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Torex Semiconductor
Toshiba
TRNSR
Part | Description |
DTL3406 | 2.0A Ic Low frequency power silicon NPN transistor |
TRSYS
Part | Description |
1N5406 | 600 V, 3 A, high current plastic silicon rectifier |
FL406 | 600 V, 4 A, in-line miniature single phase silicon rectifier |
TSC
Part | Description |
TS3406 | 600mA / 1.5MHz Synchronous Buck Converter |
TS34063ACS | Dc to Dc Converter Controller |
TS34063CS | Dc to Dc Converter Controller |
TS3406CX5 | 600mA / 1.5MHz Synchronous Buck Converter |
UFOTT
Part | Description |
1N5406 | 3A Iout, 600V Vrrm General Purpose Silicon Rectifier |
UOT
Part | Description |
MIE-406A2U | High power infrared emitting diode |
MIE-406A4U | High power infrared emitting diode |
MIE-406L3U | High power infrared emitting diode |
USHA
Part | Description |
1N5406 | 3A Iout, 600V Vrrm General Purpose Silicon Rectifier |
BU406 | NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
BU406D | NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
Unisonic Technologies Co.
UTMC
Part | Description |
5962-8864406VXA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish solder. |
5962-8864406VXC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish gold. |
5962-8864406VXX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish optional. |
5962-8864406VYA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish solder. |
5962-8864406VYC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish gold. |
5962-8864406VYX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish optional. |
5962-8864406VZA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish solder. |
5962-8864406VZC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish gold. |
5962-8864406VZX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML V. Lead finish optional. |
5962-8864406XA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish solder. |
5962-8864406XC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish gold. |
5962-8864406XX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish optional. |
5962-8864406YA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish solder. |
5962-8864406YC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish gold. |
5962-8864406YX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish optional. |
5962-8864406ZA | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish solder. |
5962-8864406ZC | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish gold. |
5962-8864406ZX | UT63M dual monolithic transceiver: SMD. Total dose none. +-12V, idle low. QML Q. Lead finish optional. |
5962F9475406QLA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962F9475406QLC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962F9475406QLX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962F9475406QXA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962F9475406QXC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962F9475406QXX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962F9475406QYA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962F9475406QYC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962F9475406QYX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962F9475406VLA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962F9475406VLC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962F9475406VLX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962F9475406VXA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962F9475406VXC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962F9475406VXX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962F9475406VYA | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962F9475406VYC | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962F9475406VYX | Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962G9475406QLA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962G9475406QLC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962G9475406QLX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962G9475406QXA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962G9475406QXC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962G9475406QXX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962G9475406QYA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962G9475406QYC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962G9475406QYX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962G9475406VLA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962G9475406VLC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962G9475406VLX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962G9475406VXA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962G9475406VXC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962G9475406VXX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962G9475406VYA | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962G9475406VYC | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962G9475406VYX | Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962H9475406QLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962H9475406QLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962H9475406QLX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962H9475406QXA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962H9475406QXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962H9475406QXX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962H9475406QYA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962H9475406QYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962H9475406QYX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962H9475406VLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962H9475406VLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962H9475406VLX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962H9475406VXA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962H9475406VXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962H9475406VXX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962H9475406VYA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962H9475406VYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962H9475406VYX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962R8864406VXA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish solder. |
5962R8864406VXC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish gold. |
5962R8864406VXX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish optional. |
5962R8864406VYA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish solder. |
5962R8864406VYC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish gold. |
5962R8864406VYX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish optional. |
5962R8864406VZA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish solder. |
5962R8864406VZC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish gold. |
5962R8864406VZX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML V. Lead finish optional. |
5962R8864406XA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish solder. |
5962R8864406XC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish gold. |
5962R8864406XX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish optional. |
5962R8864406YA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish solder. |
5962R8864406YC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish gold. |
5962R8864406YX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish optional. |
5962R8864406ZA | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish solder. |
5962R8864406ZC | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish gold. |
5962R8864406ZX | UT63M dual monolithic transceiver: SMD. Total dose 1E5(100Krad). +-12V, idle low. QML Q. Lead finish optional. |
5962R9475406QLA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962R9475406QLC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962R9475406QLX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962R9475406QXA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962R9475406QXC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962R9475406QXX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962R9475406QYA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
5962R9475406QYC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
5962R9475406QYX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
5962R9475406VLA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962R9475406VLC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962R9475406VLX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962R9475406VXA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962R9475406VXC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962R9475406VXX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
5962R9475406VYA | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
5962R9475406VYC | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
5962R9475406VYX | Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
VICOR
Part | Description |
VI-982406 | 24Vin / 2Vout / 160Watts DC-DC Converter Module |
VISAY
Part | Description |
109D406X0030F0 | Wet Tantalum Capacitors Sintered Anode TANTALEX?? Capacitors for Operation to + 125 ?°C, Elastomer-Sealed |
109D406X0075T0 | Wet Tantalum Capacitors Sintered Anode TANTALEX?? Capacitors for Operation to + 125 ?°C, Elastomer-Sealed |
135D406X0030F2 | Wet Tantalum Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal For - 55 ?°C to + 200 ?°C Operation |
135D406X0075T2 | Wet Tantalum Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 ?°C to + 200 ?°C Operation |
138D406X0030F2 | Wet Tantalum Capacitors Sintered Anode TANTALEX?? Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal |
138D406X0075T2 | Wet Tantalum Capacitors Sintered Anode TANTALEX?? Capacitors Hermetically-Sealed with True Glass-to-Tantalum Seal |
23226406 | NTC Thermistors, Accuracy Line |
285D406X0050G4 | TYPE 285D Foil Tantalum Replacement |
285D406X0075G5 | TYPE 285D Foil Tantalum Replacement |
735D406X0030B2 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal CECC 30202 Approved |
735D406X0075C2 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal CECC 30202 Approved |
769D406X0030B2 | Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode,TANTALEX?? Capacitors, CECC 30202-013 Approved |
84063 | The Constituents of Semiconductor Components |
84068 | Tape and Reel Standards |
DG406AZ/883 | Analog Multiplexer |
DG406B | 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers |
DG406BDN | 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers |
DG406BDW | 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers |
DG406DJ-E3 | 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers |
DG406DW-E3 | 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers |
MBR4060WTPBF | Schottky Rectifier, 2 x 20 A |
ND2406B | MOSFETs and TempFETs |
SI1406DH_08 | N-Channel 20-V (D-S) MOSFET |
SI1406DH | N-Channel 20-V (D-S) MOSFET |
SI1406DH-T1 | N-Channel 20-V (D-S) MOSFET |
SI1406DH-T1-E3 | N-Channel 20-V (D-S) MOSFET |
SI4406DY | N-Channel 30-V (D-S) MOSFET |
SI4406DY-T1 | N-Channel 30-V (D-S) MOSFET |
SI5406CDC-T1-GE3 | N-Channel 12-V (D-S) MOSFET |
SI5406DC | N-Channel 2.5-V (G-S) MOSFET |
SI5406DC-T1 | N-Channel 2.5-V (G-S) MOSFET |
VN2406B | MOSFETs and TempFETs |
VN2406D | N-Channel 240-V (D-S) MOSFETs |
VN2406L | N-Channel 240-V (D-S) MOSFETs |
VN2406M | MOSFETs and TempFETs |
VMI
Part | Description |
1406 | 600 V single phase bridge 12 A forward current, 3000 ns recovery time |
1406F | 600 V single phase bridge 12 A forward current, 150 ns recovery time |
1406UF | 600 V single phase bridge 12 A forward current, 70 ns recovery time |
3406 | Standard Recovery Bridge Rectifier |
3406A | 600 V three phase bridge 18-20 A forward current, 3000 ns recovery time |
3406B | 600 V three phase bridge 18-20 A forward current, 3000 ns recovery time |
3406F | 20A Iout, 600V Vrrm 3-Phase Full-Wave High Speed Bridge Rectifier |
3406FA | 600 V three phase bridge 18-20 A forward current, 150 ns recovery time |
3406FB | 600 V three phase bridge 18-20 A forward current,150 ns recovery time |
3406UF | 18A Iout, 600V Vrrm 3-Phase Full-Wave High Speed Bridge Rectifier |
3406UFA | 600 V three phase bridge 18-20 A forward current, 70 ns recovery time |
3406UFB | 600 V three phase bridge 18-20 A forward current,70 ns recovery time |
LTI1406 | 600 V single phase bridge 20-25 A forward current, 3000 ns recovery time |
LTI1406F | 600 V single phase bridge 20-25 A forward current, 150 ns recovery time |
LTI1406FT | 600 V single phase bridge 20-25 A forward current, 150 ns recovery time |
LTI1406T | 600 V single phase bridge 20-25 A forward current, 3000 ns recovery time |
LTI1406UF | 600 V single phase bridge 20-25 A forward current, 70 ns recovery time |
LTI1406UFT | 600 V single phase bridge 20-25 A forward current, 70 ns recovery time |
LTI406 | 200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time |
LTI406F | 30A Iout, 600V Vrrm Single Phase High Speed Bridge Rectifier |
LTI406FT | 30A Iout, 600V Vrrm Single Phase High Speed Bridge Rectifier |
LTI406UF | 24A Iout, 600V Vrrm Single Phase High Speed Bridge Rectifier |
LTI406UFT | 24A Iout, 600V Vrrm Single Phase High Speed Bridge Rectifier |
VTRON
WAYTC
Part | Description |
1N5406 | 3A Iout, 600V Vrrm General Purpose Silicon Rectifier |
1N5406G | 3.0A Iout, 600V Vrrm General Purpose Silicon Rectifier |
Wing Shing Electronic Co.
Part | Description |
1N5406 | Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max DC blocking voltage 600V. Current 3.0A |
BU406 | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
BU406D | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V. |
BU406H | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
MC34063ADRG | DC-TO-DC Converter Control Circuits |
MC34063APG | DC-TO-DC Converter Control Circuits |
WS34063AD | DC to DC converter controller |
WS34063AP | DC to DC converter controller |
WSTAR
Part | Description |
WG24064A | GRAPHIC LCD MODULE display format: 240x64; module size: 180.0x65.0; viewing size: 133.0x39.0; dot size: 0.49x0.49; dot pitch: 0.53x0.53; controller: T6963C; |
WG24064B | GRAPHIC LCD MODULE display format: 240x64; module size: 180.0x65.0; viewing size: 133.0x39.0; dot size: 0.49x0.49; dot pitch: 0.53x0.53; controller: LC7981; |
WG24064C | GRAPHIC LCD MODULE display format: 240x64; module size: 180.0x65.0; viewing size: 133.0x39.0; dot size: 0.49x0.49; dot pitch: 0.53x0.53; controller: T6963C; |
WTE
Part | Description |
1N5406 | 600V, 3.0A silicon rectifier |
1N5406-T3 | 600V, 3.0A silicon rectifier |
1N5406-TB | 600V, 3.0A silicon rectifier |
KBL406 | 600V, 4.0A bridge rectifier |
KBL406G | 600V, 4.0A glass passivated bridge rectifier |
KBU406 | 600V, 4.0A bridge rectifier |
KBU406G | 600V, 4.0A glass passivated bridge rectifier |
UF5406G-T3 | 3.0A GLASS PASSIVATED ULTRAFAST DIODE |
UF5406-TB | 3.0A ULTRAFAST DIODE |
XICOR
Part | Description |
X40620 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14-2.7 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14-2.7A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14-4.5A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14I-2.7 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14I-2.7A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14I-4.5A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626S14I | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14-2.7 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14-2.7A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14-4.5A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14I-2.7 | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14I-2.7A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14I-4.5A | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
X40626V14I | Dual Voltage CPU Supervisor with 64K Serial EEPROM |
Xilinx Inc.
YAMCH
YSTON
Part | Description |
BD-A406ND | Super red , anode, dual digit LED display |
BD-A406ND-A | Super red , anode, dual digit LED display |
BD-C406ND | Super red , cathode, dual digit LED display |
BD-C406ND-A | Super red , cathode, dual digit LED display |
BD-E406ND-A | Super red , anode, dual digit LED display |
BD-E406RD | Super red , anode, dual digit LED display |
BD-F406ND-A | Super red , cathode, dual digit LED display |
BD-F406RD | Super red , cathode, dual digit LED display |
BF-U406RD | Super red, anode/cathode, overflow single digit LED display |
BM-40657MA | Super red, anode, single-color 5x7 dot matrix display |
BM-40657MD | Super red, anode, single-color 5x7 dot matrix display |
BM-40657NA | Super red, cathode, single-color 5x7 dot matrix display |
BM-40657ND | Super red, cathode, single-color 5x7 dot matrix display |
BM-40658MA | Super red , anode, single-color 5x8 dot matrix display |
BM-40658MD | Super red , anode, single-color 5x8 dot matrix display |
BM-40658NA | Super red , cathode, single-color 5x8 dot matrix display |
BM-40658ND | Super red , cathode, single-color 5x8 dot matrix display |
BQ-M406RD | Super red, anode, four digit LED display |
BQ-N406RD | Super red, cathode, four digit LED display |
BS-A406RD | Super red, anode, single digit LED display |
BS-C406RD | Super red, cathode, single digit LED display |
BT-A406ND | Super red, anode, three digit LED display |
BT-C406ND | Super red, cathode, three digit LED display |
BT-M406RD | Super red, anode, three digit LED display |
BT-N406RD | Super red, cathode, three digit LED display |
ZETTLER Electronics
Part | Description |
AG-24064B | SPECIFICATIONS FOR LCD MODULE |
ZILOG
Part | Description |
Z0844406 | Serial input/output controller, 6MHz |
Z0844406 | Serial input/output controller, 6MHz |
Z0844406PEC | Serial input/output controller, 6MHz |
Z0844406PSC | Serial input/output controller, 6MHz |
Z844406PEC | SERIAL INPUT/OUTPUT CONTROLLER |
Z84C4406 | Serial input/output controller, 6MHz |
Z84C4406 | Serial input/output controller, 6MHz |
Z84C4406PEC | Serial input/output controller, 6MHz |
Z84C4406PSC | Serial input/output controller, 6MHz |
Z9023406FSC | eZVision 200 Television Controller with On-Screen Display, 24 KB masked ROM version |
Z9023406PSC | eZVision 200 Television Controller with On-Screen Display, 24 KB masked ROM version |
ZOWIE Technology
Part | Description |
1N5406 | 600 V, 3.0 A silicon rectifier |
Zarlink Semiconductor
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