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Semiconductor parts containing 371
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DESC
DGTRN
| Part | Description |
| 2N1371 | Transistors, Bipolar, Ge PNP Low-Power |
| 2N3714 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
Diotec Elektronische
| Part | Description |
| 1N5371B | Silicon power Z-diode |
Diodes Incorporated
| Part | Description |
| 1N5371B | 60V 5W zener diode |
DTRON
ECC
| Part | Description |
| DM10-371 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
Philips ECG Inc.
| Part | Description |
| ECG1371 | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
| ECG5371 | 600V V[drm] Max., 80A I[T] Max. Silicon Controlled Rectifier |
EIC
EPCOS
Ericsson Microelectronics
FAGOR
| Part | Description |
| 1N5371 | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371A | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371B | 60 V, 20 mA, 5 W glass passivated zener diode |
Fairchild Semiconductor
| Part | Description |
| 100371 | Low Power Triple 4-Input Multiplexer with Enable |
| 100371DC | Low Power Triple 4-Input Multiplexer with Enable |
| 100371PC | Low Power Triple 4-Input Multiplexer with Enable |
| 100371QC | Low Power Triple 4-Input Multiplexer with Enable |
| 100371QCX | Low Power Triple 4-Input Multiplexer with Enable |
| 100371QI | Low Power Triple 4-Input Multiplexer with Enable |
| 100371QIX | Low Power Triple 4-Input Multiplexer with Enable |
| 100371SC | Low Power Triple 4-Input Multiplexer with Enable |
| 100371SCX | Low Power Triple 4-Input Multiplexer with Enable |
| 10371QC | Low Power Triple 4-Input Multiplexer with Enable |
| 10371QI | Low Power Triple 4-Input Multiplexer with Enable |
| 1N4371A | Zeners |
| BC33716 | 16 - NPN General Purpose Amplifier |
| BC33716BU | NPN Epitaxial Silicon Transistor |
| BC33716TA | NPN Epitaxial Silicon Transistor |
| BC33716TAR | NPN Epitaxial Silicon Transistor |
| BC33716TF | NPN Epitaxial Silicon Transistor |
| BC33716TFR | NPN Epitaxial Silicon Transistor |
| BD13710S | NPN Epitaxial Silicon Transistor |
| BD13710STU | NPN Epitaxial Silicon Transistor |
| BD13716S | NPN Epitaxial Silicon Transistor |
| BD13716STU | NPN Epitaxial Silicon Transistor |
| FAN7371 | High-Current High-Side Gate Drive IC |
| FAN73711MX | High-Current, High-Side Gate Drive IC |
| FDN371N | 20V N-Channel PowerTrench MOSFET |
| FDN371N_NL | 20V N-Channel PowerTrench MOSFET |
FEMA
| Part | Description |
| LT3711 | LED Lamps, Special Shape |
| LT3711G | LED Lamps, Special Shape |
| LT3712 | LED Lamps, Special Shape |
| LT3712G | LED Lamps, Special Shape |
Fujitsu Microelectronics
| Part | Description |
| MB3714APS | Audio Amplifier |
| MB3715APS | Audio Amplifier |
| MB88371PFV | Intergated Circuit, Semiconductor or Electronic Component description not yet available. View Datasheet. |
FRONT
Freescale Semiconductor
| Part | Description |
| 33710 | Dual Output DC-DC & Linear Regulator IC |
| DSPA56371 | The DSP56371 is a high density CMOS device with 5.0-volt compatible inputs and outputs. |
| PC33710EW | Dual Output DC-DC & Linear Regulator IC |
Fuji Electric Co.
| Part | Description |
| e421371 | Fractional-N PLL Frequency Synthesizer |
GDIOD
| Part | Description |
| 2N3713 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3714 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3715 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3716 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
GESS
| Part | Description |
| 2N6371 | High-power silicon N-P-N transistor. 50V, 117W. |
GETRN
| Part | Description |
| 2N3713 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3714 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3715 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
| 2N3716 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor |
General Instrument (GI)
| Part | Description |
| 1N6371 | 42V Vbr, 23.0A Ipp bidirectional transient voltage suppressor |
| SMZG5371A | 60V, 5Wt General purpose voltage reference/regulator diode |
| SMZG5371B | 60V, 5Wt General purpose voltage reference/regulator diode |
| SMZJ5371A | 60V, 5Wt General purpose voltage reference/regulator diode |
| SMZJ5371B | 60V, 5Wt General purpose voltage reference/regulator diode |
GPD
| Part | Description |
| 2N1371 | Transistors, Bipolar, Ge PNP Low-Power |
GSEMI
| Part | Description |
| 1N5371 | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371A | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371B | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N6371 | 42V Vbr, 23.0A Ipp bidirectional transient voltage suppressor |
GTE
HAMAM
| Part | Description |
| G8371-01 | Reverse voltage:2V; spectral response range:0.9-1.7um; InGaAs PIN photodiode: long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzer |
| G8371-03 | Reverse voltage:2V; spectral response range:0.9-1.7um; InGaAs PIN photodiode: long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzer |
Harris Semiconductor
| Part | Description |
| 2N6371 | 50V Vcbo, 16A Ic Low frequency power silicon NPN transistor |
HEI
| Part | Description |
| GMS37112 | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37112 | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37112 | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37112T | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37112T | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37112T | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 7. |
| GMS37140 | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 10. |
| GMS37140 | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 10. |
| GMS37140T | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 10. |
| GMS37140T | 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4 bytes. I/O ports 4. Input ports 4. Output ports 10. |
Hitachi Semiconductor
| Part | Description |
| 2SK1371 | MOSFETs and TempFETs |
HWELL
| Part | Description |
| CSNA371 | Solid State Sensors Closed Loop Current Sensors |
| CSNE371 | Solid State Sensors Closed Loop Current Sensors |
| CSNF371 | Solid State Sensors Closed Loop Current Sensors |
| CSNJ371 | Solid State Sensors Closed Loop Current Sensors |
| CSNK371 | Solid State Sensors Closed Loop Current Sensors |
| CSNL371 | Solid State Sensors Closed Loop Current Sensors |
| CSNP371 | Solid State Sensors Closed Loop Current Sensors |
| CSNR371 | Solid State Sensors Closed Loop Current Sensors |
| CSNT371 | Solid State Sensors Closed Loop Current Sensors |
HYNIX
| Part | Description |
| GMS37112 | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37112 | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37112 | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37112T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37112T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37112T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37140 | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37140 | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37140T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
| GMS37140T | Program memory: 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
ICST
Integrated Device Technology
| Part | Description |
| IDT70T3719 | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3719MS133BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3719MS166BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
ILLCP
| Part | Description |
| 371BCR050K | +85?°C Temperature Stable Ceramic Disc Capacitors |
IMPAL
| Part | Description |
| ILC6371AP-25 | 2.5V Step-up switching regulator with shutdown |
| ILC6371AP-33 | 3.3V Step-up switching regulator with shutdown |
| ILC6371AP-50 | 5.0V Step-up switching regulator with shutdown |
| ILC6371BP-25 | 2.5V Step-up switching regulator with shutdown |
| ILC6371BP-33 | 3.3V Step-up switching regulator with shutdown |
| ILC6371BP-50 | 5.0V Step-up switching regulator with shutdown |
| ILC6371CP-25 | 2.5V Step-up switching regulator with shutdown |
| ILC6371CP-33 | 3.3V Step-up switching regulator with shutdown |
| ILC6371CP-50 | 5.0V Step-up switching regulator with shutdown |
Intel
| Part | Description |
| 82371AB | PCI ISA IDE Xcelerator |
| 82371FB | 82371FB (PIIX) AND 82371SB (PIIX3) PCI ISA IDE XCELERATOR |
| 82371SB | 82371FB (PIIX) AND 82371SB (PIIX3) PCI ISA IDE XCELERATOR |
| FW82371 | PCI-TO-ISA / IDE XCELERATOR PIIX4 |
| FW82371AB | PCI-to-ISA / IDE xcelerator (PIIX4) |
| SB82371 | 82371FB (PIIX) AND 82371SB (PIIX3) PCI ISA IDE XCELERATOR |
| SB82371FB | PCI ISA IDE Xcelerator |
| SB82371SB | PCI ISA IDE Xcelerator |
INTP
INTRN
| Part | Description |
| 1N4371 | 2.7V, 400mWt General purpose voltage reference/regulator diode |
| 1N4371A | 2.7V, 400mWt General purpose voltage reference/regulator diode |
| 1N5371 | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371A | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371B | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371C | 60V, 5.0Wt General purpose voltage reference/regulator diode |
| 1N5371D | 60V, 5.0Wt General purpose voltage reference/regulator diode |
Intersil Corp.
| Part | Description |
| EL5371 | 250MHz Differential Twisted-Pair Drivers |
| EL5371IU | 250 MHz differential twisted-pair driver. |
| EL5371IU-T13 | 250 MHz differential twisted-pair driver. |
| EL5371IU-T7 | 250 MHz differential twisted-pair driver. |
| EL5371IUZ | 250MHz Differential Twisted-Pair Drivers |
| EL5371IUZ-T7 | 250MHz Differential Twisted-Pair Drivers |
| ISL23710 | Terminal Voltage +-3V or +-5V, 128 Taps Up/Down Interface |
| ISL23710UIU10Z | Terminal Voltage +-3V or +-5V, 128 Taps Up/Down Interface |
| ISL23710WIU10Z | Terminal Voltage +-3V or +-5V, 128 Taps Up/Down Interface |
| ISL23711 | Terminal Voltage +- 3V or +- 5V, 128 Taps IC Serial Interface |
| ISL23711UIU10Z | Terminal Voltage +- 3V or +- 5V, 128 Taps IC Serial Interface |
| ISL23711WIU10Z | Terminal Voltage +- 3V or +- 5V, 128 Taps IC Serial Interface |
| ISL37105P-CD | -0.3 to 4.0V(max); PRISM 3 11 Mbps wireless local area network mini PC |
| ISL37105P-EVAL | -0.3 to 4.0V(max); PRISM 3 11 Mbps wireless local area network mini PC |
| ISL37106P-CD | -0.3 to 4.0V(max); PRISM 3 11 Mbps wireless local area network PCMCIA |
| ISL37106P-EVAL | -0.3 to 4.0V(max); PRISM 3 11 Mbps wireless local area network PCMCIA |
International Rectifier
| Part | Description |
| AUIRF3710Z | HEXFET?? Power MOSFET |
| AUIRF3710ZSTRL | HEXFET?? Power MOSFET |
| AUIRF3710ZSTRR | HEXFET?? Power MOSFET |
| AUIRFR3710Z | HEXFET?? Power MOSFET |
| AUIRFR3710ZTRR | HEXFET?? Power MOSFET |
| IR3710MTRPBF_10 | WIDE INPUT AND OUTPUT, SYNCHRONOUS BUCK REGULATOR |
| IR3710MTRPBF | WIDE INPUT AND OUTPUT, SYNCHRONOUS BUCK REGULATOR |
| IRF3710 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 23 mOhm, ID = 57A |
| IRF3710L | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A |
| IRF3710LPBF | HEXFET?? Power MOSFET ( VDSS = 100V , RDS(on) = 23m?© , ID = 57A ) |
| IRF3710S | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A |
| IRF3710Z | AUTOMOTIVE MOSFET |
| IRF3710ZL | AUTOMOTIVE MOSFET |
| IRF3710ZLPBF | AUTOMOTIVE MOSFET |
| IRF3710ZPBF | AUTOMOTIVE MOSFET |
| IRF3710ZS | AUTOMOTIVE MOSFET |
| IRF3710ZSPBF | AUTOMOTIVE MOSFET |
| IRF3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A |
| IRF3711L | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A |
| IRF3711S | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A |
| IRF3711SPBF | HEXFET Power MOSFET |
| IRF3711Z | HEXFET Power MOSFET |
| IRF3711ZCLPBF | HEXFET Power MOSFET |
| IRF3711ZCS | HEXFET Power MOSFET |
| IRF3711ZL | HEXFET Power MOSFET |
| IRF3711ZLPBF | HEXFET Power MOSFET |
| IRF3711ZS | HEXFET Power MOSFET |
| IRF3717 | HEXFETPower MOSFET |
| IRF3717PBF | HEXFET Power MOSFET |
| IRF5M3710 | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.03 Ohm, ID = 35A |
| IRF5N3710 | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.028 Ohm, ID = 45A |
| IRF5Y3710CM | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.035 Ohm, ID = 18A |
| IRFI3710 | HEXFET Power MOSFET |
| IRFN3710 | HEXFET transistor |
| IRFP3710 | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.025 W, ID = 57 A |
| IRFR3710Z | Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi |
| IRFR3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.5mOhm, ID = 110A |
| IRFR3711PBF | HEXFET Power MOSFET |
| IRFR3711Z | HEXFET Power MOSFET |
| IRFR3711ZCPBF | HEXFET Power MOSFET |
| IRFR3711ZPBF | HEXFET Power MOSFET |
| IRFU3710Z | Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi |
| IRFU3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.5mOhm, ID = 110A |
| IRFU3711Z | HEXFET Power MOSFET |
| IRFU3711ZCPBF | HEXFET Power MOSFET |
| IRL3713 | SMPS MOSFET |
| IRL3713L | SMPS MOSFET |
| IRL3713PBF | HEXFET Power MOSFET |
| IRL3713S | SMPS MOSFET |
| IRL3714 | Power MOSFET, 20V, 36A |
| IRL3714L | Power MOSFET, 20V, 36A |
| IRL3714LPBF | SMPS MOSFET HEXFET??Power MOSFET |
| IRL3714PBF | SMPS MOSFET HEXFET??Power MOSFET |
| IRL3714S | Power MOSFET, 20V, 36A |
| IRL3714SPBF | SMPS MOSFET HEXFET??Power MOSFET |
| IRL3714ZLPBF | HEXFET??Power MOSFET |
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