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Semiconductor parts containing 256
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Toshiba
Part | Description |
THNCF256MBA | The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card. |
THNCF256MBAI | The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card. |
THNCF256MMA | The THNCFxxxxMA series CompactFlash card is a flash technology based with ATA interface flash memory card |
TMM23256P | 256K BIT(32K WORD x 8 BIT) MASK ROM N-CHANNEL SILICON GATE |
TMM24256AF | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM24256AP | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM24256BF-17 | 170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory |
TMM24256BF-20 | 200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory |
TMM24256BP-17 | 170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory |
TMM24256BP-20 | 200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory |
TMM27256AD150 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256AD15 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256AD200 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256AD20 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BD150 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BD15 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BD200 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BD20 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BDI15 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256BDI20 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256D15 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256D20 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256DI15 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM27256DI20 | 256Kbit (32Kx8) MOS 3-STATE UV-Erasable EPROM |
TMM41256AP10 | General Purpose Dynamic RAM |
TMM41256AP12 | General Purpose Dynamic RAM |
TMM41256AP15 | General Purpose Dynamic RAM |
TMM41256AT10 | General Purpose Dynamic RAM |
TMM41256AT12 | General Purpose Dynamic RAM |
TMM41256AT15 | General Purpose Dynamic RAM |
TMM41256AZ10 | General Purpose Dynamic RAM |
TMM41256AZ12 | General Purpose Dynamic RAM |
TMM41256AZ15 | General Purpose Dynamic RAM |
TMM41256C12 | General Purpose Dynamic RAM |
TMM41256C15 | General Purpose Dynamic RAM |
TMM41256C20 | General Purpose Dynamic RAM |
TMM41256P12 | General Purpose Dynamic RAM |
TMM41256P15 | General Purpose Dynamic RAM |
TMM41256T12 | General Purpose Dynamic RAM |
TMM41256T15 | General Purpose Dynamic RAM |
TRBIC
Part | Description |
28C256AJC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256AJM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256API-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256API-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256API-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256API-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256APM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ASM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28C256ATM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256JM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256PM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256SM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
28LV256TM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
TU24C256PC-2.7 | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256PC | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256PI-2.7 | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256PI | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256SC-2.7 | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256SC | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256SI-2.7 | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU24C256SI | CMOS I2C 2-wire bus 256 K electrically erasable programmable ROM 16K/32K x 8bit EEPROM |
TU25C256PC-2.7 | 2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256PC | 4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256PI-2.7 | 2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256PI | 4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256SC-2.7 | 2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256SC | 4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256SI-2.7 | 2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TU25C256SI | 4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
TRNSR
Part | Description |
2N2560 | Transistors, Bipolar, Ge PNP Power |
2N2561 | Transistors, Bipolar, Ge PNP Power |
2N2562 | Transistors, Bipolar, Ge PNP Power |
2N2563 | Transistors, Bipolar, Ge PNP Power |
2N2564 | Transistors, Bipolar, Ge PNP Power |
2N2565 | Transistors, Bipolar, Ge PNP Power |
2N2566 | Transistors, Bipolar, Ge PNP Power |
2N2567 | Transistors, Bipolar, Ge PNP Power |
TRSYS
Part | Description |
3N256 | 400 V, 2 A, in-line glass passivated single phase rectifier bridge |
TSC
Part | Description |
MBRS2560CT | 25 AMPS. Surface Mount Schottky Barrier Rectifiers |
SB256 | High Current 15 25 35 AMPS Single Phase Bridge Rectifiers |
SB256W | High Current 15 25 35 AMPS Single Phase Bridge Rectifiers |
TURBO
Part | Description |
28C256AJC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256AJC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256AJC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256AJC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256AJI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256AJI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256AJI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256AJI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256AJM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256AJM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256AJM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256AJM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256APC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256APC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256APC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256API-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256API-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256API-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256API-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256APM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256APM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ASC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ASC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ASC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ASI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ASI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ASI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ASI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ASM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ASM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ASM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ASM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ATC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ATC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ATC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ATI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ATI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C256ATM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256JC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256JC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256JI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256JI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256JI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256JM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256JM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256JM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256JM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256PC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256PC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256PC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256PC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256PI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256PI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256PI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256PI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256PM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256PM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256PM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256SC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256SC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256SC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256SC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256SI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256SI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256SI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256SI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256SM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256SM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256SM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256SM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256TC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256TC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256TI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256TI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256TI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV256TM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
TU24C256CP3 | CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU24C256CS3 | CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU25C256PC-2.7 | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU25C256PC | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
TU25C256PI-2.7 | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU25C256PI | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
TU25C256SC-2.7 | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU25C256SC | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
TU25C256SI-2.7 | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
TU25C256SI | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
United Microelectronics Corp.
USHA
Part | Description |
BY256A | 3.0A Iout, 1500V Vrrm General Purpose Silicon Rectifier |
UTMC
Part | Description |
UT28F256LVC-65PCA | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish solder. |
UT28F256LVC-65PCC | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish gold. |
UT28F256LVC-65PCX | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional. |
UT28F256LVC-65PPA | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish solder. |
UT28F256LVC-65PPC | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish gold. |
UT28F256LVC-65PPX | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional. |
UT28F256LVC-65UCA | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish solder. |
UT28F256LVC-65UCC | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish gold. |
UT28F256LVC-65UCX | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional. |
UT28F256LVC-65UPA | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish solder. |
UT28F256LVC-65UPC | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish gold. |
UT28F256LVC-65UPX | Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional. |
UT28F256T-40PCA | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Mil temp. |
UT28F256T-40PCC | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. |
UT28F256T-40PCX | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Mil temp. |
UT28F256T-40PPA | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Prototype. |
UT28F256T-40PPC | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Prototype. |
UT28F256T-40PPX | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Prototype. |
UT28F256T-40UCA | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Mil temp. |
UT28F256T-40UCC | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. |
UT28F256T-40UCX | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Mil temp. |
UT28F256T-40UPA | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Prototype. |
UT28F256T-40UPC | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Prototype. |
UT28F256T-40UPX | Radiation-hardenet 32Kx8 PROM. 40ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Prototype. |
UT28F256T-45PCA | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Mil temp. |
UT28F256T-45PCC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. |
UT28F256T-45PCX | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Mil temp. |
UT28F256T-45PPA | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Prototype. |
UT28F256T-45PPC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Prototype. |
UT28F256T-45PPX | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Prototype. |
UT28F256T-45UCA | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Mil temp. |
UT28F256T-45UCC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. |
UT28F256T-45UCX | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Mil temp. |
UT28F256T-45UPA | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish solder. Prototype. |
UT28F256T-45UPC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Prototype. |
UT28F256T-45UPX | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Prototype. |
UT8R256K1615TBDCA | 256K x 16 SRAM. 15ns access time. Lead finish hot solder dipped. |
UT8R256K1615TBDCC | 256K x 16 SRAM. 15ns access time. Lead finish gold. |
UT8R256K1615TBDCX | 256K x 16 SRAM. 15ns access time. Lead finish factory option. |
UT8R256K1615TBDPC | 256K x 16 SRAM. 15ns access time. Lead finish gold. Prototype flow. |
UTRON
Part | Description |
UT61256CJC-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CJC-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CJC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CJC-8 | Access time: 8 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CLS-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CLS-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CLS-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256CLS-8 | Access time: 8 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256JC-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256JC-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256JC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256JC-8 | Access time: 8 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256KC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256LS-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256LS-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256LS-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256LS-8 | Access time: 8 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61256SC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CJC-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CJC-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CJC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CLS-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CLS-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256CLS-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UT61L256JC-10 | Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256JC-12 | Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256JC-15 | Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256JC-8 | Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256LS-10 | Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256LS-12 | Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT61L256LS-15 | Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UT62256BLS-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-35LI | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-35LLI | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-70LI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BLS-70LLI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BPC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BPC-70LI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BPC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BPC-70LLI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-35LI | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-35LLI | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-70LI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256BSC-70LLI | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-35LE | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-35LLE | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-70LE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CLS-70LLE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70 | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70E | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70LE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CPC-70LLE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35 | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35E | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35LE | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-35LLE | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70 | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70E | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70LE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256CSC-70LLE | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256LS-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256LS-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256LS-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256LS-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256PC-70 | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256PC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256PC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-35 | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-70 | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62256SC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L25616BS-55L | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-55LE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-55LI | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-55LL | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-55LLE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-55LLI | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70L | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70LE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70LI | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70LL | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70LLE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616BS-70LLI | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55L | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55LE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55LI | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55LL | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55LLE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-55LLI | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70L | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70LE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70LI | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70LL | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70LLE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L25616MC-70LLI | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62L2568BS-55L | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-55LE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-55LI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-55LL | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-55LLE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-55LLI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70L | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70LE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70LI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70LL | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70LLE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568BS-70LLI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55L | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55LE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55LI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55LL | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55LLE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-55LLI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70L | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70LE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70LI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70LL | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70LLE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LC-70LLI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LL | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LLE | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LLI | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-55LLL | Access time: 55 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70L | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70LE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70LI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70LLE | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70LLI | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L2568LS-70LLL | Access time: 70 ns, 256 K x 8 Bit low power CMOS SRAM |
UT62L256CLS-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CLS-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CLS-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CLS-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CPC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CPC-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CPC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CPC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CSC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CSC-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CSC-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62L256CSC-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM |
UT62V25616BS-100L | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-100LE | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-100LI | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-100LL | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-100LLE | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-100LLI | Access time: 100 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-70L | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-70LE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
UT62V25616BS-70LI | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM |
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