| Part | Description |
| A223 | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| KDS2236 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE |
| KDS2236M | Silicon diode for AFC applications for FM receiver |
| KDS2236S | Silicon diode for AFC applications for FM receiver |
| KRA223M | PNP transistor for high current switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 and 4.7 kOm) |
| KRA223S | PNP transistor for high current switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 and 4.7 kOm) |
| KTB2234 | Darlington Transistor |
| KTC2230 | V(ceo): 160V; I(c): 0.1A; P(c): 0.8W; NPN silicon transistor |
| KTC2230A | V(ceo): 180V; I(c): 0.1A; P(c): 0.8W; NPN silicon transistor |
| KTC2231 | V(ceo): 160V; I(c): 0.2A; P(c): 12W; NPN silicon transistor |
| KTC2231A | V(ceo): 180V; I(c): 0.2A; P(c): 12W; NPN silicon transistor |
| KTC2233 | 200V Vcbo, 4.0A Ic Low frequency power silicon NPN transistor |
| KTC22331 | V(ceo): 60V; I(c): 4A; P(c): 35W; NPN silicon transistor |
| KTC2233I | 200V Vcbo, 4.0A Ic Low frequency power silicon NPN transistor |
| KTC2235 | SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
| KTC2236A | High-Frequency Power Silicon NPN BJT |
| KTC2238 | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) |
| KTC2238A | NPN transistor for high voltage applications |
| KTC2238B | High-Frequency Power Silicon NPN BJT |
