| Part | Description |
| 1000GXHH22 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 1000GXHH23 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100EXD21 | 100A Iout, 2.5kV Vrrm General Purpose Silicon Rectifier |
| 100FXFG13 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100FXFH13 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100FXG13 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100FXH13 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100GXHH22 | Silicon diffused type diode for high speed (fast recovery) rectifier applications |
| 100JH21 | 100A Iout, 600V Vrrm Fast Recovery Rectifier |
| 100QD21 | 100A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier |
| 100YD21 | 100A Iout, 2.0kV Vrrm General Purpose Silicon Rectifier |
| 1SV100 | SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
| 1Z100 | Zener diode for constant voltage regulation and transient suppressors applications |
| 1ZB100 | Zener diode for constant voltage regulation and transient suppressors applications |
| 1ZC100 | TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE |
| 1ZC100A | Zener diode for constant voltage regulation, telephone, printer uses |
| 1ZM100 | 100V, 1.0Wt double-anode voltage reference/regulator diode |
| 2SC1000GTM | Transistors, Bipolar, Si NPN Low-Power |
| 2SC1000TM | Transistors, Bipolar, Si NPN Low-Power |
| 2SC1001 | UHF/Microwave BJTs |
| 2SC2100 | High-Frequency Power Silicon NPN BJT |
| 2ZC100 | Zener diode for constant voltage regulation, telephone, printer uses |
| 90CLQ100 | I(f)(av): 90 Amp; V(rrm): 100V; schottky rectifier |
| MG100G1AL3 | BJT and MOS-BJT Power Modules |
| MG100G1FL1 | BJT and MOS-BJT Power Modules |
| MG100G1JL1 | BJT and MOS-BJT Power Modules |
| MG100G2CH1 | BJT and MOS-BJT Power Modules |
| MG100G2DL1 | TECHNICAL DATA |
| MG100G2JL1 | TECHNICAL DATA |
| MG100H1BS1 | IGBT Power Modules |
| MG100H2CK1 | BJT and MOS-BJT Power Modules |
| MG100H2CL1 | BJT and MOS-BJT Power Modules |
| MG100H2DL2 | BJT and MOS-BJT Power Modules |
| MG100H2YS1 | IGBT Power Modules |
| MG100J1BS11 | N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG100J1ZS40 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100J2YS50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100J6ES50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100J7KS50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100M2CK1 | BJT and MOS-BJT Power Modules |
| MG100N2YS1 | IGBT Power Modules |
| MG100Q1JS40 | Silicon N-channel IGBT GTR module for high power switching,chopper applications |
| MG100Q1ZS40 | Silicon N-channel IGBT GTR module for high power switching,chopper applications |
| MG100Q1ZS50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS11 | GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
| MG100Q2YS40 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS42 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS50A | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS51 | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MG100Q2YS51A | Silicon N-channel IGBT GTR module for high power switching, motor control applications |
| MIG100J101H | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| MIG100J201H | Silicon N-channel IGBT intelligent power module for high power switching, motor control applications |
| MIG100J201HC | High Power Switching Applications Motor Control Applications |
| MIG100J7CSB1W | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| MIG100Q201H | Silicon N-channel IGBT intelligent power module for high power switching, motor control applications |
| MIG100Q6CMB1X | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| MT4S100T | UHF LOW NOISE AMPLIFIER APPLICATION |
| MT4S100U | UHF LOW NOISE AMPLIFIER APPLICATION |
| P1001A | THSHIBA PHOTOINTERRUPTER INFRARED LED+PHOTO IC |
| P100A | THSHIBA PHOTOINTERRUPTER INFRARED LED+PHOTO IC |
| PLP1000A | THSHIBA PHOTOINTERRUPTER INFRARED LED+PHOTO IC |
| PLP1001A | THSHIBA PHOTOINTERRUPTER INFRARED LED+PHOTO IC |
| RN1001 | V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor |
| RN1002 | V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor |
| RN1003 | V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor |
| RN1004 | V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor |
| RN1005 | V(cbo): 50V; V(ceo): 50V; V(ebo): 5V; 100mA; 400mW; silicon NPN epitaxial type transistor |
| RN1006 | V(cbo): 50V; V(ceo): 50V; V(ebo): 5V; 100mA; 400mW; silicon NPN epitaxial type transistor |
