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Partname: | Si4963BDY |
Description: | Dual P-Channel 2.5-V (G-S) MOSFET |
Manufacturer: | |
Datasheet: | PDF (235K). Click here to download *) |
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. |
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Click here to download Si4963BDY Datasheet*) |
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