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Partname:Si3433BDV
Description:P-Channel 1.8-V (G-S) MOSFET
Manufacturer:
Datasheet:PDF (244K).
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The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Click here to download Si3433BDV Datasheet
Click here to download Si3433BDV Datasheet
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