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Partname: | SI8901EDB |
Description: | Bi-Directional P-Channel 20-V (D-S) MOSFET |
Manufacturer: | |
Datasheet: | PDF (220K). Click here to download *) |
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. |
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Click here to download SI8901EDB Datasheet*) |
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