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| Partname: | SI6866BDQ |
| Description: | Dual N-Channel 2.5-V (G-S) MOSFET |
| Manufacturer: | |
| Datasheet: | PDF (237K).
Click here to download *) |
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. |
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Click here to download SI6866BDQ Datasheet*) |
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