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Partname: | 5962H0151701VYX |
Description: | Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 1E6 rads(Si). |
Manufacturer: | |
Package: | DIP |
Pins: | 28 |
Oper. temp.: | -55 to 125 |
Datasheet: | PDF (67.2). Click here to download *) |
The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256LV ideal for high speed systems designed for operation in radiation environments. |
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Click here to download 5962H0151701VYX Datasheet*) |
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