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Partname:5962H0151601QXC
Description:Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Manufacturer:
Package:DIP
Pins:28
Oper. temp.:-55 to 125
Datasheet:PDF (152K).
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The UT28F64LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64LV. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64LV ideal for high speed systems designed for operation in radiation environments.

Click here to download 5962H0151601QXC Datasheet
Click here to download 5962H0151601QXC Datasheet
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