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Partname: | 5962G9687301QXX |
Description: | Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 5E5rads(Si) |
Manufacturer: | |
Package: | DIP |
Pins: | 28 |
Oper. temp.: | -55 to 125 |
Datasheet: | PDF (337K). Click here to download *) |
The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64 ideal for high speed systems designed for operation in radiation environments. |
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