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| Partname: | 5962G0151601VXA |
| Description: | Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si). |
| Manufacturer: | |
| Package: | DIP |
| Pins: | 28 |
| Oper. temp.: | -55 to 125 |
| Datasheet: | PDF (152K).
Click here to download *) |
The UT28F64LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64LV. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64LV ideal for high speed systems designed for operation in radiation environments. |
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Click here to download 5962G0151601VXA Datasheet*) |
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