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Partname:5962F9687301VXX
Description:Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Manufacturer:
Package:DIP
Pins:28
Oper. temp.:-55 to 125
Datasheet:PDF (337K).
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The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64 ideal for high speed systems designed for operation in radiation environments.

Click here to download 5962F9687301VXX Datasheet
Click here to download 5962F9687301VXX Datasheet
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