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Partname:EC2612
Description:40GHz Super Low Noise PHEMT
Manufacturer:United Monolithic Semiconductor
Datasheet:PDF (111K).
Click here to download *)

The EC2612 is based on a 0.15m gate pseudomorphic high electron mobility transistor (0.15m PHEMT) technology. Gate width is 120m and the 0.15m T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high

Click here to download EC2612 Datasheet
Click here to download EC2612 Datasheet
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