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Partname:EC2612-99F/00
Description:40GHz superlow noise PHEMT
Manufacturer:United Monolithic Semiconductor
Package:Chip
Pins:3
Datasheet:PDF (111K).
Click here to download *)

The EC2612 is based on a 0.15m gate pseudomorphic high electron mobility transistor (0.15m PHEMT) technology. Gate width is 120m and the 0.15m T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high

Click here to download EC2612-99F/00 Datasheet
Click here to download EC2612-99F/00 Datasheet
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