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Partname:CHA2069RAF
Description:18-31GHz Low Noise Amplifier
Manufacturer:United Monolithic Semiconductor
Datasheet:PDF (171K).
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The MMIC is manufactured with a standard PM-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier.

Click here to download CHA2069RAF Datasheet
Click here to download CHA2069RAF Datasheet
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