The TQP770001 Bluetooth PA is designed on TriQuint's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The PA is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping, and bias injection. Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back paddle. A recommended drawing is provided in section 4.3.2. This PA is designed to operate in Bluetooth v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.