The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-02 typically provides > 41 dBm of saturated output power with power gain of 15 dB. The maximum power added efficiency is 55% which makes the TGF2023-02 appropriate for high efficiency applications.