The TGA9083-EEU is fabricated using TI's 0.25um T-gate power pHEMT process. This device offer s either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency over 6.5 to 11.5 GHz mak e it a viable power amp solution in applications such as point-to-point radio , phased-array radar, and telecommunications. Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment methods as well as with thermocompression and thermosonic wire -bonding processes. The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment. Ground is provided to the circuitr y through vias to the backside metallization.