The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier which operates from 6 to 17-GHz. Each channel features three-stage topology with a 1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 m single gate FET second stage, and a 1900 m single gate FET third stage. The dualchannel construction is designed for off-chip combining. A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gain and 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifier is designed for use in wideband systems such as electronic warfare, expendable decoys and test equipment. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. Ground is provided to the circuitry through vias to the backside metallization.