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Partname:AGR26125E
Description:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Manufacturer:TriQuint Semiconductor
Datasheet:PDF (392K).
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The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications. )

Click here to download AGR26125E Datasheet
Click here to download AGR26125E Datasheet
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