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Partname:AGR18045E
Description: 45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
Manufacturer:TriQuint Semiconductor
Datasheet:PDF (432K).
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The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today's RF power amplifier applications.

Click here to download AGR18045E Datasheet
Click here to download AGR18045E Datasheet
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