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Partname:AGR09030E
Description:30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Manufacturer:TriQuint Semiconductor
Datasheet:PDF (337K).
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The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 30 W, it is ideally suited for today's RF power amplifier applications.

Click here to download AGR09030E Datasheet
Click here to download AGR09030E Datasheet
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