YTFP250 Datasheet - V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications from Toshiba

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Partname:	YTFP250
Description:	V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications
Manufacturer:	Toshiba
Package:	-
Pins:	3
Datasheet:	PDF (102K). Click here to download ^*)

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