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| Partname: | TC58NS256DC |
| Description: | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ? 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| Manufacturer: | Toshiba |
| Datasheet: | PDF (709K).
Click here to download *) |
The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages). |
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Click here to download TC58NS256DC Datasheet*) |
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