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Partname: | TC58512FT |
Description: | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Manufacturer: | Toshiba |
Datasheet: | PDF (420K). Click here to download *) |
The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes 32 pages). |
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![Click here to download TC58512FT Datasheet](../../../pndecoder/datasheets/TOS/img/004457.gif) Click here to download TC58512FT Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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