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    | Partname: | TC58512FT |  
    | Description: | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |     
    | Manufacturer: | Toshiba |  
    | Datasheet: | PDF (420K). Click here to download *) |  
    The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes 32 pages).  |  
    
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    Click here to download TC58512FT Datasheet*) | 
  
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