The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256JI/FTI is available in plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. The TC55V16256JI/FTI guarantees -40 to 85C operating temperature so it is suitable for use in wide operating temperature system.