TC5516AP-2 Datasheet - 200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM from Toshiba

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Partname:	TC5516AP-2
Description:	200ns; V(dd): -0.3 to +7.0V; V(in/out): -0.3 to +0.3V; 0.8W; 2,048 word x 8-bit silicon gate CMOS static RAM
Manufacturer:	Toshiba
Package:	PDIP
Pins:	24
Oper. temp.:	-30 to 85
Datasheet:	PDF (551K). Click here to download ^*)

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