MG400Q1US65H Datasheet - V(ces): 1200V; V(ges): +-20V; I(c): 400V; 2650W; silicon N-channel IGBT. For high power & high speed switching applications from Toshiba

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Partname:	MG400Q1US65H
Description:	V(ces): 1200V; V(ges): +-20V; I(c): 400V; 2650W; silicon N-channel IGBT. For high power & high speed switching applications
Manufacturer:	Toshiba
Package:	-
Pins:	4
Datasheet:	PDF (195K). Click here to download ^*)

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