MG300Q1US11 Datasheet - V(ces): 1200V; V(ges): +-20V; 2000W; ; insulated gate bipolar transistor. For high power switching and motor control applications from Toshiba

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Partname:	MG300Q1US11
Description:	V(ces): 1200V; V(ges): +-20V; 2000W; ; insulated gate bipolar transistor. For high power switching and motor control applications
Manufacturer:	Toshiba
Package:	-
Datasheet:	PDF (395K). Click here to download ^*)

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