GT5J311(SM) Datasheet - Silicon N-channel IGBT insulated gate bipolar transistor for high power switching, motor control applications from Toshiba

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Partname:	GT5J311(SM)
Description:	Silicon N-channel IGBT insulated gate bipolar transistor for high power switching, motor control applications
Manufacturer:	Toshiba
Package:	2-10S1C
Pins:	3
Datasheet:	PDF (293K). Click here to download ^*)

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