2SK2856 Datasheet - GaAs N-channel single gate modulation dope type field effect transistor for UHF band low noise amplifier applications from Toshiba

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Partname:	2SK2856
Description:	GaAs N-channel single gate modulation dope type field effect transistor for UHF band low noise amplifier applications
Manufacturer:	Toshiba
Package:	2-1K1C
Pins:	3
Datasheet:	PDF (235K). Click here to download ^*)

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